• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.4 s.33
• /
• pp.81-86
• /
• 2004

A new method to improve the wet etching characteristics is described. The anisotropic wet-etching of (100) Si with megasonic wave has been studied in KOH solution. Etching characteristics of p-type (100) 6 inch Si have been explored with and without megasonic irradiation. It has been observed that megasonic irradiation improves the characteristics of wet etching such as an etch uniformity and surface roughness. The etching uniformity on the whole wafer with and without megasonic irradiation were less than ${\pm}1\%$ and more than $20\%$, respectively. The initial root-mean-square roughness($R_{rms}$) of single crystal silicon is 0.23 nm. It has been reported that the roughnesses with magnetic stirring and ultrasonic agitation were 566 nm and 66 nm, respectively. Comparing with the results, etching with megasonic irradiation achieved the Rrms of 1.7 nm on the surface after the $37{\mu}m$ of etching depth. Wet etching of silicon with megasonic irradiation can maintain nearly the original surface roughness after etching process. The results have verified that the megasonic irradiation is an effective way to improve the etching characteristics such as etch uniformity and surface roughness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.364-365
• /
• 2006

Transverse some wave was generated by T type waveguide for single wafer cleaning application T type megasonic waveguide was analyzed by acoustic pressure measurements and particle removal efficiency. Compared to conventional longitudinal waves, not like longitudinal waves, transverse waves showed changes of direction and phase which increased the cleaning efficiency.

• Journal of the Korean Society for Precision Engineering
• /
• v.30 no.11
• /
• pp.1193-1201
• /
• 2013

Improved far field type(improved type) megasonic applicable to the cleaning equipment of single wafer processing type has been developed. In this study, to improve the uniformity of acoustic pressure distribution(APD), we utilize far field with relatively uniform APD, piezoelectric ceramic with a triangle hole in its center to prevent standing wave resulted from radial mode, and reflected wave from the wall of waveguide. On the basis of these methods, two analysis models of improved type were designed to which piezoelectric ceramic of different shape of electrode attached, and APD were analyzed by means of finite element method, and then one of them was selected by analysis results, finally, the selected model was fabricated. Test results show that the fabricated is better in the uniformity of APD than the imported and the conventional, also the fabricated shows high particle removal efficiency of 92.3% using DI water alone as a cleaning solution.

• The Journal of the Acoustical Society of Korea
• /
• v.16 no.1E
• /
• pp.49-56
• /
• 1997

Ultrasonic cleaning at high frequency around 1 MHz, called megasonic cleaning, is commonly used to remove particles less than 1 ㎛ by generating high frequency accelerations on the cleaning objects. Cleaning is performed in an ultrasonically-excited liquid contained in a double-structured container. Ultrasonic waves generated by piezoelectric transducers propagate in the outer container and are transmitted through the inner container. The bottom of the inner container is inclined to make oblique incidence of the ultrasonic wave in order to raise the efficiency of the transmission through the bottom plate. This work deals with the efficiency of the transmission, which directly affects the cleaning performance. The transmission characteristics of the ultrasonic wave in the megasonic cleaner have been obtained analytically and numerically for the variations of some parameters, such as the thickness and inclined angle of the bottom plate of the inner container and the chemical ratio and temperature of the cleaning liquid. The calculated results have yielded the optimum cleaning condition in terms of the sound power transmitted into the cleaning liquid.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2009.05a
• /
• pp.25.1-25.1
• /
• 2009

Pattern 웨이퍼 상의 오염입자 제거는 반도체 산업의 주된 과제 중 하나이다. Pattern의 선폭이 좁아짐에 따라 Pattern에 손상을 가하지 않고 오염입자를 제거 하는 것은 더욱 어려워지고 있다. 그뿐만 아니라 기존 습식세정 공정에서의 화학액에 의한 환경오염 및 박막의 손실도 문제가 되기 시작했다. 이러한 문제를 해결하기 위해 기존 세정공정에서 화학액의 농도를 낮추고 Megasonic 등을 이용하여 세정력을 보완하는 방법들이 연구되고 있다. 하지만 습식세정의 경우 강한 화학작용으로 인한 표면 손상 및 물 반점의 문제는 여전히 이슈가 되고 있다. 이러한 단점을 극복하기 위하여 건식 세정법이 제시되고 있으며 이 중 레이저 충격파는 레이저를 집속시켜 발생된 충격파를 이용하여 입자를 제거하기 때문에 국부적인 세정이 가능하며 세정력 조절이 가능하여 손상이 세정을 할 수 있다. 그러나 Pattern의 구조에 의해 전되는 세정력의 차이가 발생하고 Trench 내부의 오염입자제거 문제점이 발생할 수 있다. 시편은 Si STI Pattern을 100 nm PSL Particle (Red Fluorescence, Duke Scientific, USA) 을 50ppm 농도로 희석시킨 IPA에 dipping 하여 오염시킨 후 N2 Gas를 이용하여 건조하여 준비하였다. 그리고 레이저 충격파 세정 시스템은 최대 에너지 1.8 J까지 가능한 레이저를 발생하는 1,064 nm Nd:YAG 레이저를 이용하여 실험하였다. 레이져 충격파 실험은 충격파와 시편사이의 거리, gap distance와 에너지를 변환하여 세정효율을 관찰하였다. 세정효율은 세정 전후의 입자 감소량을 현광현미경 (LV-150, Nikon, Japan)를 이용하여 측정하였다. 그 결과, Trench 내부의 오염입자의 경우 Trench 밖의 오염입자에 비해 세정효율이 떨어지는 것으로 나타났으나 시편과 레이저 초점과의 거리가 가까워짐에 따라 Trench 내부의 오염입자에 대한 세정 효율을 증가시킬 수 있었다.