• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.996-1000
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• 1998

This paper describes the characteristics of Pt microheater using aluminum oxide films as medium layer and its application to flow sensors. Pt microheater have heating temperature of $390^{\circ}C$ at heating power of 1.2 W. Output voltages of flow sensors which were fabricated by integrating sensing-part with heating-part increase as gas flow rate and its conductivity increase. At $O_2$ flow rate of 2000 sccm, heating power of 0.8 W, output voltage of flow sensor is 101 mV under bridge-applied voltage of 5 V.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.31-35
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• 2001

IGCTs have established themselves as the power semiconductor of choice at medium voltage levels within the last few years because of their low conduction and switching losses. The trade-off between these losses can be adjusted by various lifetime control techniques and the growing demand for these devices is driving the need for standard types to cover such applications as Static Circuit Breakers (low on-state) and Medium Voltage Drives (low switching losses). The additional demands of Traction (low operating temperatures) and Current Source Inverters (symmetric blocking) would normally result in conflicting demands on the semiconductor. This paper will outline how a range of power devices can meet these needs with a limited number of wafers and gate units. Some of the key differences between IGCTs and IGBTs will be explained and the outlook for device improvements will be discussed.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.145-150
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• 2015

This paper described the medium voltage high temperature superconducting cable thermal simulation and its application. New simulation method for HTS cable modeling using PSCAD/EMTDC is introduced in this paper. The developed simulation method consists of electrical model part and thermal model part. In electrical model part, power loss and thermal capacitance can be calculated in each layer, then the temperature of each layer can be calculated by power loss and thermal capacitance in thermal model part. This paper also analyzes the electrical and thermal characteristic in the case of normal operating condition and transient including single line to ground fault and line to line ground fault using new simulation method.

• Journal of Power Electronics
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• v.12 no.6
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• pp.935-946
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• 2012

A new kind of resonant impedance type hybrid active filter (RITHAF) is proposed for dynamic harmonic current suppression and high capacity reactive compensation in medium and high voltage systems. This paper analyzed the different performance of the RITHAF when the active part of the RITHAF is controlled as a current source and as a voltage source, respectively. The harmonic suppression function is defined in this paper. The influences of the changes caused by the grid impedance and the detuning of the passive power filter on the compensating characteristics of the RITHAF are studied by analyzing the suppression function. Simulation and industrial application results show that the RITHAF has excellent performances in harmonic suppression and reactive compensation, which is suitable for medium and high voltage systems.

• Journal of Power Electronics
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• v.13 no.1
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• pp.59-69
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• 2013

An alternative technique to control multilevel inverters with vector approximations has been presented. The innovative control method utilizes specially designed two-dimensional hysteresis comparators to simplify the implementation and improve the resultant waveform. The multistage inverter designed with maximum number of levels is operated in such a way to approximate the reference voltage vector by exploiting the large number of multilevel inverter vectors. A three-stage inverter with the main high voltage stage made of three phase, six-switch and singly-fed inverter is considered for application to the proposed design. The proposed control concept is to maintain a higher voltage stage state as long as it can lead to a target vector. High and medium voltage stages controllers are based on surface hysteresis comparators to hold the switching state or to perform the necessary change to achieve its reference voltage with minimal switching losses. The low voltage stage controller is designed to approximate the target reference voltage to the nearest inverter vector using the nearest integer rounding and adjustment comparators. Model simulation and prototype test results show that the proposed control technique clearly outperforms the previous control methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.358-361
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• 1999

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD\`s and micro-heater on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer The MgO layer improved adhesion of Pt thin-films to SiO$_2$` layer without any chemical reactions to Pt thin-films under high as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W. The respons time was about 100 msec when input flow was step-input

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.386-387
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• 2013

This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of IGBT module type, IGBT press-pack type, and IGCT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral-point clamed 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that IGBT press-pack type semiconductor device has the highest efficiency and IGCT has the lowest cost factor considering the necessary auxiliary components.

• Journal of Korea Society of Industrial Information Systems
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• v.29 no.3
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• pp.41-49
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• 2024

In this paper, we validate simulation results for the design optimization of a Superconducting Fault Current Limiter (SFCL) intended for use in Medium Voltage Direct Current systems (MVDC). With the increasing integration of renewable energy and grid connections, researchers are focusing on medium-voltage systems for balancing energy in new and renewable energy networks, rather than traditional transmission or distribution networks. Specifically, for DC distribution networks dealing with fault currents that must be rapidly blocked, current-limiting systems like superconducting current limiters offer distinct advantages over the operation of DC circuit breakers. The development of such superconducting current limiters requires finite element analysis (FEM) and an extensive design process before prototype production and evaluation. To expedite this design process, the design outcomes are assimilated using a Reduced Order Model (ROM). This approach enables the verification of results akin to finite element analysis, facilitating the optimization of design simulations for production and mass production within existing engineering frameworks.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.430-433
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• 2003

IGBTS are widely used for the industrial inverters in the mid power range at low voltage (440V$\~$660V) application. Advantageous features of the device are simple gate drive and high speed switching capability. Due to these advantages the application of IGBTS is enlarging into the high power application. However, to increase the power handling capacity at lower input voltage level, the current rating in each bridge arm must be enlarged. Therefore the parallel operation of IGBT devices is essentially needed. This paper describes the feasible parallel structures of the power circuit for the mid & the high power inverters and introduces the important design condition for the parallel operation of IGBT devices. To verify feasibility of the IGBT parallel operation, the feature of several IGBT devices (EUPEC, SEMIKRON's IGBT) are investigated and the power stacks are implemented and tested with these devices. The experimental results show the good characteristics for the parallel operation of IGBTS.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.2
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• pp.66-72
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• 2003

The global assessment system for medium voltage power cable systems has been developed The minimum purpose of diagnostic activity is the economic discrimination and maintenance of bad cables which is likely to cause cable system failure. I have adapted the Aging Time Constant Method to construct the power cable assessment system for the diagnostic purpose. From the field application test and breakdown test results, it could be concluded that the diagnostic system was successful art convenient for the discrimination and maintenance of the bad cables, which is likely to fail sooner or later, economically.