• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• Journal of Life Science
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• v.27 no.7
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• pp.754-759
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• 2017

The 100 l culture system was made on the basis of LED light, and Nannochloropsis oculata was cultured in f/2 medium at light intensity ($100{\mu}mol/m^2/s$), culture temperature ($20^{\circ}C{\pm}1^{\circ}C$) and LD cycle (12hr). As a result, the maximum biomass of 1.07 g/l was cultured as a result of 100 l mass culture at $100{\mu}mol/m^2/s$ and 24 mg/l nitrate concentration in LED blue (475 nm). The extraction was carried out using sonicator, homogenizer and chemical method 0.5M HCl shredding method. The contents of chlorophyll a, chlorophyll b and carotenoid were 1.6, 0.5 and 0.3 mg/g cell. When using homogenizer, it was measured at 1.0, 0.6 and 0.2 mg/g cell. The chemical breakdown method of 0.5M HCl, chlorophyll a, b, and carotenoid contents were measured as 0.9, 0.8, 0 mg/g cell. The highest amount of biomass during the distruption time was measured at 3.6 mg/g cell at 15 min disintegration and acetone, 3.6 mg/g cell of acetone, methanol, and ethanol were measured as effective solvents. Concentration was measured by using microfilter, disk type continuous centrifuge and tubular type continuous centrifuge were 16.0, 1.1 and 0.5 g/l, respectively. Four kinds of equipment such as hot air dryer, vacuum dryer, spray dryer and freeze dryer were tested to optimize the drying process. As a result, the recovery rates of spray dryer and freeze dryer were 80% and 60%.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.