• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.32-37
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• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.3
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• pp.196-200
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• 2009

Lithium niobate ($LN:LiNbO_3$) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in surface acoustic wave (SAW). To manufacture LN devices, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult b traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters such as down force and relative velocity, were investigated for the LN CMP process To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.121-122
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• 2008

Lithium Niobate (LN:LiNbO3) is a compound of niobium, lithium and oxygen. The characteristics of LN are piezoelectricity, ferroelectricity and photoelectricity, and which is widely used in surface acoustic wave (SAW). To manufacture LN device, the LN surface should be a smooth surface and defect-free because of optical property, but the LN material is processed difficult by traditional processes such as grinding and mechanical polishing (MP) because of its brittleness. To decrease defects, chemical mechanical polishing (CMP) was applied to the LN wafer. In this study, the suitable parameters scuh as pressure and relative velocity, were investigated for the LN CMP process. To improve roughness, the LN CMP was performed using the parameters that were the highest removal rate among process parameters. And, evaluation of optical property was performed by the optical reflectance and non-linear characteristic.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.51-56
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• 2018

To evaluate surface characteristics of AlN single crystal grown by physical vapor transport (PVT) method, chemical mechanical polishing (CMP) were performed with diamond slurry and $SiO_2$ slurry after mechanical polishing (MP), then the surface morphology and analysis of polishing characteristics of the slurry types were analyzed. To estimate how pH of slurry effects polishing process, pH of $SiO_2$ slurry was controlled, the results from estimating the effect of zeta potential and MRR (material removal rate) were compared in accordance with each pH via zeta potential analyzer. Eventually, surface roughness RMS (0.2 nm) could be derived with atomic force microscope (AFM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].