• 제목/요약/키워드: Maximum TE

검색결과 180건 처리시간 0.022초

T2 이완시간의 정량적 평가에 있어서 Maximum TE의 설정 범위에 대한 연구 : 팬텀연구 (Maximum TE Setting Range for Quantitatively Evaluating T2 Relaxation Time : Phantom Study)

  • 박진서;김성호
    • 대한방사선기술학회지:방사선기술과학
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    • 제41권1호
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    • pp.25-31
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    • 2018
  • This study aimed to evaluate the range of maximum TE that could measure T2 relaxation time accurately by setting diverse maximum TE with using contrast medium phantoms. Contrast medium phantoms ranging from low to high concentrations were made by using Gadoteridol. The relaxation time and relaxation rate were compared and evaluated by conducting T2 mapping by using reference data based on various TEs and data obtained from different maximum TEs. It was found that accurate T2 relaxation time could be expressed only when the maximum TE over a certain range was used in the section with long T2 relaxation time, such as the low concentration section of saline or gadolinium contrast medium. Therefore, the maximum TE shall be longer than the T2 relation time for accurately maturing the T2 relaxation of a certain tissue or a substance.

분말 제조공정에 따른 n형 PbTe 가압소결체의 열전특성 (Thermoelectric Properties of the Hot-Pressed n-Type PbTe with the Powder Processing Method)

  • 최재식;오태성;현도빈
    • 한국재료학회지
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    • 제8권3호
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    • pp.245-251
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    • 1998
  • Bi를 첨가한 n형 PbTe 가압소결체를 기계적 합금화 공정으로 제조하여, 소결 특성과 열전특성을 분석하고 이를 용해/분쇄법으로 제조한 PbTe가압소결체와 비교하였다. 기계적 합금화 공정으로 제조한 PbTe가압소결체에는 용해/분쇄법으로 제조한 시편에 비해 Seebeck계수가 음의 값으로 증가하였으며, 전기비저항이 증가하고 열전도도가 감소하였다. 또한 기계적 합금화 공정으로 제조한 PbTe에서 최대성능지수가 증가하였으며, \ulcorner대성능지수를 나타내는 온도가 저온으로 이동하였다. 0.3wt% Bi를 첨가한 PbTe를 $650^{\circ}C$에서 가압소결시 기계적 합금화 공정으로 제조한 시편은 $200^{\circ}C$에서 $1.33\times10^{-3}/K$의 최대성능지수를 나타내었으며, 용해/분쇄법으로 제조한 시편은 $400^{\circ}C$에서 $1.07\times10^{-3}/K$의 최대성능지수를 나타내었다.

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Extensive investigations of photon interaction properties for ZnxTe100- x alloys

  • Singh, Harinder;Sharma, Jeewan;Singh, Tejbir
    • Nuclear Engineering and Technology
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    • 제50권8호
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    • pp.1364-1371
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    • 2018
  • An extensive investigation of photon interaction properties has been made for $Zn_xTe_{100-x}$ alloys (where x = 5, 20, 30, 40, 50) to explore its possible use in sensing and shielding gamma radiations. The results show better and stable response of ZnTe alloys for various photon interaction properties over the wide energy range, with an additional benefit of ease in fabrication due to lower melting points of Zn and Te. Mass attenuation coefficient values show strong dependence on photon energy as well as composition. Effective atomic number has maximum value for $Zn_5Te_{95}$ and lowest for $Zn_{50}Te_{50}$ in the entire energy region. The alloy sample with maximum $Z_{eff}$ shows minimal value of $N_e$ and vice versa. Mean free path follows inverse trend as observed for mass attenuation coefficient. The exposure and energy absorption buildup factors depend upon photon energy, penetration thickness and composition (effective atomic number) of $Zn_xTe_{100-x}$ alloys. It finds its application for sensing and shielding from highly energetic and highly penetrating photons at sites where radioactive materials were used and visibility of material is not a big constraint. Further, energy down conversion property of ZnTe alloys with subsequent emission in green band suggests its potential use in sensing gamma photons.

분할접합비에 따른 (Pb,Sn)Te/(Bi,Sb)2Te3 경사기능소자의 열전발전특성 (Thermoelectric Power Generation Characteristics of the (Pb,Sn)Te/(Bi,Sb)2Te3Functional Gradient Materials with Various Segment Ratios)

  • 이광용;현도빈;오태성
    • 한국재료학회지
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    • 제12권12호
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    • pp.911-917
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    • 2002
  • 0.5 at% $Na_2$Te-doped ($Pb_{0.7}Sn_{0.3}$)Te and ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ powders were fabricated by mechanical alloying process. 0.5 at% Na$_2$Te-doped ($Pb_{0.7}Sn_{0.3}$)Te powders were charged at one end of mold and ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ powders were charged at the other end of a mold. Then these powders were hot-pressed to form p-type ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ functional gradient materials with the segment ratios (the ratio of ($Pb_{0.7}Sn_{0.3}$)Te to ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ ) of 1:2, 1:1, and 2:1. Power generation characteristics of the ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ were measured. When the temperature difference ΔT at both ends of the specimen was larger than $300^{\circ}C$, the ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ with the segment ratios of 1:2 and 1:1 exhibited larger output power than those of the ($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ and 0.5 at% $Na_2$ Te-doped ($Pb_{0.7}Sn_{0.3}$)Te alloys. The maximum output power of the ($Pb_{0.7}Sn_{0.3}$)Te/($Bi_{0.2}Sb_{0.8}$)$_2$$Te_3$ predicted with the measured Seebeck coefficient and the estimated electrical resistivity was in good agreement with the measured maximum output power.

기계적 합금화 공정으로 제조한($Pb_{1-x}Sn_x$)Te 가압소결체의 열전특성 (Thermoelectric Properties of the Hot-Pressed ($Pb_{1-x}Sn_x$)Te Fabricated by Mechanical Alloying)

  • 이준수;최재식;이광응;현도빈;이희웅;오태성
    • 한국재료학회지
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    • 제8권11호
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    • pp.1055-1060
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    • 1998
  • 기계적 합금화 공정과 가압소결법으로 ($Pb_{1-x}Sn_x$)Te($0\leq{x}\leq{0.4}$)합금을 제조하여 SnTe 함량에 따른 열전특성을 분석하였다. PbTe와 ($Pb_{0.9}Sn_{0.1}$)Te 가압소결체는 각기 $200^{\circ}C$$300^{\circ}C$에서 p형에서 n형으로 천이되었으나, SnTe를 0.2몰 이상 함유한 가압소결체는 $450^{\circ}C$까지의 온도범위에서 p형 전도를 나타내었다. Extrinsic 전도영역에서 SnTe 함량이 증가함에 따라 ($Pb_{1-x}Sn_x$)Te 가압소결체의 Seebeck 계수와 전기비저항이 감소하였다. SnTe 함량이 증가함에 따라 (Pb1-xSnx)Te 가압소결체의 최대성능지수를 나타내는 온도가 고온으로 이동하였으며, ($Pb_{0.7}Sn_{0.3}$)Te 가압소결체는 $200^{\circ}C$에서 $0.68\times10_{-3}/K$의 최대성능지수를 나타내었다.

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박막 열전 발전 소자를 위한 In3Sb1Te2와 Ge2Sb2Te5 박막의 열전 특성에 관한 연구 (Characterization of n-type In3Sb1Te2 and p-type Ge2Sb2Te5 Thin Films for Thermoelectric Generators)

  • 강소현;서혜지;윤순길
    • 한국재료학회지
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    • 제27권2호
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    • pp.89-93
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    • 2017
  • A thin film thermoelectric generator that consisted of 5 p/n pairs was fabricated with $1{\mu}m$-thick n-type $In_3Sb_1Te_2$ and p-type $Ge_2Sb_2Te_5$ deposited via radio frequency magnetron sputtering. First, $1{\mu}m$-thick GST and IST thin films were deposited at $250^{\circ}C$ and room temperature, respectively, via radio-frequency sputtering; these films were annealed from 250 to $450^{\circ}C$ via rapid thermal annealing. The optimal power factor was found at an annealing temperature of $400^{\circ}C$ for 10 min. To demonstrate thermoelectric generation, we measured the output voltage and estimated the maximum power of the n-IST/p-GST generator by imposing a temperature difference between the hot and cold junctions. The maximum output voltage and the estimated maximum power of the $1{\mu}m$-thick n-IST/p-GST TE generators are approximately 17.1 mV and 5.1 nW at ${\Delta}T=12K$, respectively.

0.5 vol% TiO2 나노분말을 분산시킨 n형 Bi2(Te0.9Se0.1)3 가압소결체의 열전특성 (Thermoelectric Properties of the n-type Bi2(Te0.9Se0.1)3 Processed by Hot Pressing with Dispersion of 0.5 vol% TiO2 Nanopowders)

  • 박동현;오태성
    • 마이크로전자및패키징학회지
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    • 제20권1호
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    • pp.15-19
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    • 2013
  • 용해/분쇄법으로 제조한 n형 $Bi_2(Te_{0.9}Se_{0.1})_3$ 분말에 0.5 vol% $TiO_2$ 나노분말을 분산시켜 가압소결 후, $TiO_2$ 나노분말의 분산이 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체의 열전특성에 미치는 영향을 분석하였다. $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체는 $2.93{\times}10^{-3}/K$의 최대 성능지수 및 1.02의 최대 무차원 성능지수의 우수한 열전특성을 나타내었다. 0.5 vol% $TiO_2$ 나노분말의 첨가에 의해 $Bi_2(Te_{0.9}Se_{0.1})_3$ 가압소결체의 최대 성능지수가 $2.09{\times}10^{-3}/K$로 감소하였으며, 최대 무차원 성능지수는 0.68로 저하하였다.

복합재료에 의한 열전변환 냉각소자의 개발에 관한 연구 (Experimental fabrication and analysis of thermoelectric devices)

  • 성만영;송대식;배원일
    • E2M - 전기 전자와 첨단 소재
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    • 제9권1호
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    • pp.67-75
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    • 1996
  • This paper has presented the characteristics of thermoelectric devices and the plots of thermoelectric cooling and heating as a function of currents for different temperatures. The maximum cooling and heating(.DELTA.T) for (BiSb)$\_$2/Te$\_$3/ and Bi$\_$2/(TeSe)$\_$3/ as a function of currents is about 75.deg. C, A solderable ceramic insulated thermoelectric module. Each module contains 31 thermoelectric devices. Thermoelectric material is a quaternary alloy of bismuth, tellurium, selenium, and antimony with small amounts of suitable dopants, carefully processed to produce an oriented polycrystalline ingot with superior anisotropic thermoelectric properties. Metallized ceramic plates afford maximum electrical insulation and thermal conduction. Operating temperature range is from -156.deg. C to +104.deg. C. The amount of Peltier cooling is directly proportional to the current through the sample, and the temperature gradient at the thermoelectric materials junctions will depend on the system geometry.

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Optoelectrical Properties of HgCdTe Epilayers Grown by Hot Wall Epitaxy

  • Yun, Suk-Jin;Hong, Kwang-Joon
    • 센서학회지
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    • 제13권4호
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    • pp.277-281
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    • 2004
  • $Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

최단경로 라우팅을 이용한 효율적인 인터넷 트래픽 엔지니어링 (Efficient Internet Traffic Engineering based on Shortest Path Routing)

  • 이영석
    • 한국통신학회논문지
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    • 제29권2B호
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    • pp.183-191
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    • 2004
  • 단일 최단경로 라우팅 알고리즘은 흔히 최대 링크 로드를 최소화하는 인터넷 트래픽 엔지니어링에 적합하지 않다고 알려져있다. 또한 여러 개의 최단경로들을 동시에 사용하여 트래픽을 나누어서 전송하는 방법은 전체 트래픽 디맨드를 고려하지 않기 때문에 최대링크로드를 반드시 최소화시키지는 못한다. 하지만, 여러 개의 최단경로들이 동일 송수신 노드 사이에 존재하면, 기존 라우팅 프로토콜에 변화를 주지 않고도 최대 링크 로드를 최소화시킬 수 있는 최단경로들의 집합을 선택하여 이용할 수 있다. 이러한 최단 경로들을 계산할 때에는 동일 목적지에 대해서는 송신자에 관계없이 동일한 넥스트-홉을 유지해야한다. 본 논문에서는 트래픽 엔지니어링을 위한 최단 경로 라우팅 알고리즘의 최적해를 구할 수 있는 ILP 문제를 제시하고, 근사해를 구하기 위한 휴리스틱 알고리즘을 제안하고 성능을 평가하였다.