• Title/Summary/Keyword: Maximum Current Density

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Critical currents across grain boundaries in YBCO : The role of grain boundary structure

  • Miller Dean J.;Gray Kenneth E.;Field Michael B.;Kim, Dong-Ho
    • Progress in Superconductivity
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    • v.1 no.1
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    • pp.14-19
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    • 1999
  • Measurements across single grain boundaries in YBCO thin films and bulk bicrystals have been used to demonstrate the influence of grain boundary structure on the critical current carried across the grain boundary. In particular, we show that one role of grain boundary structure is to change the degree of pinning along the boundary, thereby influencing the critical current. This effect can be used to explain the large difference in critical current density across grain boundaries in thin films compared to that for bulk bicrystal. These differences illustrate the distinction between the intrinsic mechanism of coupling across the grain boundary that determines the maximum possible critical current across a boundary and the measured critical current which is limited by dissipation due to the motion of vortices.

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Characteristics of AlGaAs/GaAs Quantum-Well Delta-Doped Channel FET's by Low Pressure Metalorganic Chemical Vapor Deposition (저압 유기금속기상 성장법에 의한 AlGaAs/GaAs 양자 우물에 델타 도우핑된 채널 FET 특성)

  • 장경식;정동호;이정수;정윤하
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.4
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    • pp.33-37
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    • 1992
  • AlGaAs/GaAs quantum well delta-doped channel FET's have been successfully fabricated using by low-pressure metalorganic chemical vapor deposition(LP-MOCVD). The FET's with a gate dimension of 1.8$\mu$m $\times$ 100$\mu$m have a maximum transconductance of 190 mS/mm and a maximum current density of 425 mA/nm. The devices show extremely broad transconductances with a large voltage swing of 2.4V. The S-parameter measurements have indicated that the current gain and power gain cutoff frequencies of the device were 7 and 15 GHz, respectively. These values are among the best performance reported for GaAs based heterojunction FET's with a similar device geometry.

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Ferroelectric and leakage current characteristics of Pt/SBT/Pt capacitors with post annealing process (후속 열처리에 따른 Pt/SBT/Pt 캐패시터의 강유전 특성과 누설전류 특성)

  • 권용욱;박주동;연대중;오태성
    • Journal of the Korean Vacuum Society
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    • v.8 no.3A
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    • pp.238-244
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    • 1999
  • Pt/SBT/Pt capacitors were fabricated using the MOD-derived $SrBi_{2x}Ta_2O_9$ (SBT) films and their ferroelectic and leakage current characteristics were investigated with post annealing at 400~$800^{\circ}C$. Although the MOD-derived SBT film exhibited the hysteresis loop typical for the leaky film, the well-saturated ferroelectric hysteresis loop could be obtained by post annealing the Pt/SBT/Pt capacitors at $550^{\circ}C$~$800^{\circ}C$. The remanent polarization $2P_r$ of the SBT film exhibited a maximum value of 9.72$\mu\textrm{cm}^2$ with post annealing at $600^{\circ}C$, and then decreased with increasing the post annealing temperature above $600^{\circ}C$. The MOD-derived SBT films exhibited the high leakage current density of ~$10^{-3} \textrm{A/cm}^2$ at 75kV/cm. With post annealing the Pt/SBT/Pt capacitor at 600~$800^{\circ}C$, however, the leakage current density decreased remarkably to less than $10^{-6}\textrm{A/cm}^2$ at 75kV/cm.

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Fabrication and Test of Micro Direct Methanol Fuels using Platinum Sputtered Microcolumn Electrodes with a Limited Fuel Source (백금 촉매가 증착된 미소돌기 전극과 유한 연료를 가지는 극소형 직접메탄을 연료전지의 제작 및 성능 평가)

  • 서영호;조영호
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.4
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    • pp.218-224
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    • 2004
  • We present a miniature Direct Methanol Fuel Cell (micro-DMFC) using platinum sputtered microcolumn electrodes with a limited amount of fuel. We use the microcolumn electrode in order to improve the power density of the micro-DMFC that consists of two electrodes and polymer electrolyte. We also design the built-in fuel chamber in the anode for the portable electronics applications. We design and fabricate both microcolumn and planar electrodes, having an identical projective area of 5mm${\times}$5mm. The diffusion current density of the microcolumn electrode is 1.73 times higher than that of the planar electrode at electrode potential of 1.1V in the half-cell test. The micro-DMFC based on the microcolumn electrodes shows the maximum power of 10.8$\pm$7.54㎼(43.23$\pm$0.16㎼/$\textrm{cm}^2$) at the projective area of 5mm${\times}$5mm, while the planar electrode micro-DMFC shows the maximum power of 0.81$\pm$0.42㎼(3.24$\pm$1.68㎼/$\textrm{cm}^2$) at the same projective area. The micro-DMFC based on the microcolumn electrodes shows 13 times higher power density that the micro-DMFC based on the planar electrodes does.

In2S3 Co-Sensitized PbS Quantum Dot Solar Cells

  • Basit, Muhammad Abdul;Park, Tae Joo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.273-273
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    • 2014
  • Quantum-dot sensitized solar cells (QDSCs) are an emerging class of solar cells owing to their easy fabrication, low cost and material diversity. Despite of the fact that the maximum conversion efficiency of QDSCs is still far less than that of Dye-Sensitized Solar Cells (>12 %), their unique characteristics like Multiple Exciton Generation (MEG), energy band tune-ability and tendency to incorporate multiple co-sensitizers concurrently has made QDs a suitable alternative to expensive dyes for solar cell application. Lead Sulfide (PbS) Quantum dot sensitized solar cells are theoretically proficient enough to have a photo-current density ($J_{sc}$) of $36mA/cm^2$, but practically there are very few reports on photocurrent enhancement in PbS QDSCs. Recently, $Hg^{2+}$ incorporated PbS quantumdots and Cadmium Sulfide (CdS) co-sensitized PbS solarcells are reported to show an improvement in photo-current density ($J_{sc}$). In this study, we explored the efficacy of $In_2S_3$ as an interfacial layer deposited through SILAR process for PbS QDSCs. $In_2S_3$ was chosen as the interfacial layer in order to avoid the usage of hazardous CdS or Mercury (Hg). Herein, the deposition of $In_2S_3$ interfacial layer on $TiO_2$ prior to PbS QDs exhibited a direct enhancement in the photo-current (Isc). Improved photo-absorption as well as interfacial recombination barrier caused by $In_2S_3$ deposition increased the photo-current density ($J_{sc}$) from $13mA/cm^2$ to $15.5mA/cm^2$ for single cycle of $In_2S_3$ deposition. Increase in the number of cycles of $In_2S_3$ deposition was found to deteriorate the photocurrent, however it increased $V_{oc}$ of the device which reached to an optimum value of 2.25% Photo-conversion Efficiency (PCE) for 2 cycles of $In_2S_3$ deposition. Effect of Heat Treatment, Normalized Current Stability, Open Circuit Voltage Decay and Dark IV Characteristics were further measured to reveal the characteristics of device.

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Fabrication and Characterization of Enzyme Electrode for Lactate Fuel Cell (젖산 연료전지용 효소전극 제작 및 특성 분석)

  • Zhang, YanQing;Kim, Chang-Joon
    • Korean Chemical Engineering Research
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    • v.59 no.3
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    • pp.373-378
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    • 2021
  • The study aimed to develop a high-power enzymatic electrode for a wearable fuel cell that generates electricity utilizing lactate present in a sweat as fuel. Anode was fabricated by immobilizing lactate oxidase (LOx) on flexible carbon paper. As the lactate concentration in the electrolyte solution increased, the amount of current generated by catalysis of lactate oxidase increased. The immobilized LOx generated 1.5-times greater oxidation current density in the presence of gold nanoparticles than carbon paper only. Bilirubin oxidase (BOD)-immobilized cathode generated a larger amount of reduction current in the electrolyte saturated with oxygen than purged with nitrogen. A fuel cell composed of two electrodes was fabricated and cell voltage was measured under different discharge current. At the discharge current density of 66.7 ㎂/cm2, the cell voltage was 0.5±0.0 V leading to maximum cell power density of 33.8±2.5 ㎼/cm2.

The Dependence of CT Scanning Parameters on CT Number to Physical Density Conversion for CT Image Based Radiation Treatment Planning System (CT 영상기반 방사선치료계획시스템을 위한 CT수 대 물리적 밀도 변환에 관한 CT 스캐닝 매개변수의 의존성)

  • Baek, Min Gyu;Kim, Jong Eon
    • Journal of the Korean Society of Radiology
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    • v.11 no.6
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    • pp.501-508
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    • 2017
  • The dependence of CT scanning parameters on the CT number to physical density conversion from the CT image of CT and CBCT electron density phantom acquired by the CT scanner using in radiotherapy were analyzed by experiment. The CT numbers were independent of the tube current product exposure time, slice thickness, filter of image reconstruction, field of view and volume of phantom. But the CT numbers were dependent on the tube voltage and cross section of phantom. As a result, for physical density range above 0, the maximum CT number difference observed at the tube voltage between 90 and 120 kVp was 27%, and the maximum CT number difference observed between CT body and head electron density phantom was 15%.

Development and Testing of a Prototype Long Pulse Ion Source for the KSTAR Neutral Beam System

  • Chang Doo-Hee;Oh Byung-Hoon;Seo Chang-Seog
    • Nuclear Engineering and Technology
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    • v.36 no.4
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    • pp.357-363
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    • 2004
  • A prototype long pulse ion source was developed, and the beam extraction experiments of the ion source were carried out at the Neutral Beam Test Stand (NBTS) of the Korea Superconducting Tokamak Advanced Research (KSTAR). The ion source consists of a magnetic bucket plasma generator, with multi-pole cusp fields, and a set of tetrode accelerators with circular apertures. Design requirements for the ion source were a 120kV/65A deuterium beam and a 300 s pulse length. Arc discharges of the plasma generator were controlled by using the emission-limited mode, in turn controlled by the applied heating voltage of the cathode filaments. Stable and efficient arc plasmas with a maximum arc power of 100 kW were produced using the constant power mode operation of an arc power supply. A maximum ion density of $8.3{\times}10^{11}\;cm^{-3}$ was obtained by using electrostatic probes, and an optimum arc efficiency of 0.46 A/kW was estimated. The accelerating and decelerating voltages were applied repeatedly, using the re-triggering mode operation of the high voltage switches during a beam pulse, when beam disruptions occurred. The decelerating voltage was always applied prior to the accelerating voltage, to suppress effectively the back-streaming electrons produced at the time of an initial beam formation, by the pre-programmed fast-switch control system. A maximum beam power of 0.9 MW (i.e. $70\;kV{\times}12.5\;A$) with hydrogen was measured for a pulse duration of 0.8 s. Optimum beam perveance, deduced from the ratio of the gradient grid current to the total beam current, was $0.7\;{\mu}perv$. Stable beams for a long pulse duration of $5{\sim}10\;s$ were tested at low accelerating voltages.

The First Discharge Characteristics of PAn/Li-Al Secondary Battery (PAn/Li-Al 2차전지의 초기방전특성)

  • Moon, Seong-In;Yun, Mun-Soo
    • Proceedings of the KIEE Conference
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    • 1990.07a
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    • pp.207-210
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    • 1990
  • The purpose of this study is to research and develop polymer secondary battery. This paper describes the first discharge characteristics of PAn/Li-Al secondary battery. PAn was prepared in $HBF_4$ aqueous solution by galvanostatic electropolymerization and then used as cathode active material. PAn/Li-Al secondary battery was prepared in 2025 coin type. Characteristics of this battery are summarized as follows. ${\bullet}$ Open curcuit voltage and discharge end voltage was 3.5V and 2.9V, respectively. ${\bullet}$ The ratio of electricities in discharge to theoretical electricities in all undoping of PAn cathode was 56% at constant current discharge of 1mA. ${\bullet}$ The capacity density, energy density and maximum power density per weight of PAn electroactive material were 56.1Ah/kg, 168.4Wh/kg and 16.9kW/kg, respectively.

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A Study on Characteristic of the 14/50/50 PLZT Thin Film for DRAM Capacitor (고집적 DRAM소자용 14/50/50 PLZT 박막의 특성에 관한 연구)

  • 박용범;장낙원;백동수;마석범;최형욱;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.118-121
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    • 1999
  • PLZT thin films were fabricated with different energy density by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Sr substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, 200mTorr $O_2$ pressure for 2 J/$\textrm{cm}^2$ laser energy density. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{r}$=1289.9 P-E hysteresis loop of 14/ 50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/50 PLZT thin film was 10/ sup -7/=A/$\textrm{cm}^2$.>.

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