• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.333-339
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• 2004

For an electrical insulation design of HTS cable, it is important to understand the dielectric characteristics of insulation materials in L$N_2$ and the insulation type. Generally, the electrical insulation of HTS Cable is classified into two types of the composite insulation and solid insulation type. In this research, we selected the insulation paper/L$N_2$ composite insulation type for the electric insulation of a HTS cable, and studied electric insulation characteristics of synthetic Laminated Polypropylene Paper(LPP) in liquid nitrogen(L$N_2$) for the application to high temperature superconducting(HTS) cable. Furthermore, we compared the breakdown characteristics of the butt gap and bended mini-model cable. It is necessary to understand the winding parameter of insulation paper/LN2 composite insulation.

• Journal of Information Display
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• 제13권1호
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• pp.1-6
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• 2012

Decreasing the thermal resistance is the critical issue for high-brightness light-emitting diodes. In this paper, the effects of some design factors, such as chip size (24 and 35 mil), substrate material (AlN and high-temperature co-fired ceramic), and die-attach material (Ag epoxy and PbSn solder), on the thermal-dissipation characteristics were investigated. Using the thermal transient method, the temperature sensitivity parameter, $R_{th}$ (thermal resistance), and junction temperature were estimated. The 35-mil chip showed better thermal dissipation, leading to lower thermal resistance and lower junction temperature, owing to its smaller heat source density compared with that of the 24-mil chip. By adopting an AlN substrate and a PbSn solder, which have higher thermal conductivity, the thermal resistance of the 24-mil chip can be decreased and can be made the same as that of the 35-mil chip.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.681-684
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• 2003

Piezoelectric motors have been successfully developed for various applications like autofocus drives in camera lenses and handling equipment for high-accuracy positioning. In this paper, the travelling-wave motor which used in the camera lense, using bending vibration of a ring was studied. The basic structure of the motor is same but we suggested a few parameters for considering their design. The parameter is different from sine and cosine region of the voltage of the ceramic surface, displacement according to the wave number difference, and the phase difference. Same size of ceramics and aluminium ring were used for the stator. As a result, the displacement is dependent on the wave number.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1239-1243
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• 2004

A novel voltage-current reference circuit for stable voltage-current applications is Proposed. Circuits for a positive and for a negative voltage-current reference are presented and are designed with commercial CMOS technology. The voltage-current reference that is stable over ambient temperature variations is an important component of most data acquisition systems. These results are verified by the HSPICE simulation $0.8{\mu}m$ parameter. As the result, the temperature dependency of output voltage and output current each is $0.57mV/^{\circ}C$, $0.11{\mu}A/^{\circ}C$ and the power dissipation is 1.8 mV on 5V supply voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.5-5
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• 2010

Gallium Nitride(GaN)는 LED, Laser 등에 사용되는 광학적 특성뿐만 아니라 Wide Bandgap의 전기적 특성 또한 주목받고 있다. 본 논문은 600V급 GaN(Gallium Nitride) Power SIT(Static Induction Transistor)에 대해서 Design Parameter 변환에 따른 전기적 (Breakdown Voltgage, On-state Voltage Drop)특성과 열적 (Lattice Temperature Distribution)특성변화를 분석하여 소자가 갖는 구조적 손실을 최소화하였다. 또한, 기존 실리콘 기반 전력소자와 특성 비교를 통하여 GaN Power SIT의 우수성을 증명하였다. GaN Power SIT 소자 설계 및 최적화를 위해서 Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하였다. 실험 결과 수 ${\mu}m$의 소자 두께만으로도 실리콘 전력소자에 비해 더 뛰어난 열 특성과 더 적은 전력소모를 갖는 600V급 GaN Power SIT 소자를 구현할 수 있었다.

• 한국공작기계학회논문집
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• 제17권1호
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• pp.65-70
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• 2008

The shape and the material of a reflective sheet affect the amount and the range of retroreflection on incident angle of light, significantly. In this study, the method to determine the shape and the material of the reflective sheet is introduced for the maximum retroreflection. Since the microprism shape with an equilateral triangle base has been used widely, the shape optimization of the microprism shape is carried out. The path of the light within the prism is geometrically calculated to find the relationship between incoming and outgoing light to and from a microprism. The optimal shape of a microprism found by the simulation has almost same figure with the one being used in industry for the maximum retroreflection. It is also found that the refraction index of the reflective sheet is another parameter to control for maximum retroreflection and the range of retroreflection.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.241-245
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• 2001

In this paper, we present parameter optimization technique for GaAs/AlGaAs multiple quantum well avalanche photodiodes used for image capture mechanism in high-definition system. Even under flawless environment in semiconductor manufacturing process, random variation in process parameters can bring the fluctuation to device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. This paper will first use experimental design and neural networks to model the nonlinear relationship between device process parameters and device performance parameters. The derived model was then put into genetic algorithms to acquire optimized device process parameters. From the optimized technique, we can predict device performance before high-volume manufacturign, and also increase production efficiency.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.523-526
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• 2016

This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.

• Steel and Composite Structures
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• 제44권2호
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• pp.171-181
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• 2022

Functionally graded material (FGM) has been spotlighted as an advanced composite material due to its excellent thermo-mechanical performance. And the buckling of FGM resting on elastic foundations has been a challenging subject because its behavior is directly connected to the structural safety. In this context, this paper is concerned with a numerical buckling analysis of metal-ceramic FG plates resting on a two-parameter (Pasternak-type) elastic foundation. The buckling problem is formulated based on the neutral surface and the (1,1,0) hierarchical model, and it is numerically approximated by 2-D natural element method (NEM) which provides a high accuracy even for coarse grid. The derived eigenvalue equations are solved by employing Lanczos and Jacobi algorithms. The numerical results are compared with the reference solutions through the benchmark test, from which the reliability of present numerical method has been verified. Using the developed numerical method, the critical buckling loads of metal-ceramic FG plates are parametrically investigated with respect to the major design parameters.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.48-52
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• 2014

In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set reset current are carried out to analyze the feasibility of scaling down and compared with values in ITRS roadmap. Simulation results show that width and length ratio of the phase change material (PCM) is key parameter of scaling down in VPCRAM. Thermal simulation results provide the design guideline of VPCRAM. Optimization of phase change material in VPCRAM can be achieved by oxide sidewall process optimization.