• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.96-99
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• 2005

As the demand of internet networks using backbone communication systems recently increased, the researches on the high-speed wideband optical communication systems are required. For high-speed optical communication systems, asymmetric sampled grating distributed feedback laser diodes (DFB-LDs) are developed and the reliability of DFB-LDs is examined. The reliability of DFB-LDs is performed by monitoring I-V and L-I characteristics and two degradation phenomena related to the electrical characteristics of LDs are observed during the life tests. The first degradation phenomenon by increasing the reverse current is considered as a formation of leakage current path enough to prevent lasing operation in lateral blocking layer near active region of lasers. The second degradation phenomenon by decreasing the forward current is considered as activation of non-radiative Auger recombination process by thermal energy and the second degradation phenomenon is recovered after the off-test period at room temperature Eventually, evaluating the reliability of DFB LDs can allow us to improved the manufacturability in high-volume manufacturing.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.5
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• pp.921-927
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• 1989

One of the most important problems in recent life prediction is to introduce the degradation effects into life prediction procedure. In the present paper, the effect of the material degradation on the fatigue surface crack growth and fatigue life prediction in a 2 1/4 Cr-1Mo steel were investigated. The 2 1/4 Cr-1Mo steel has been used in a plant having operated for over 60000hours and subjected to material degradation due to temper-embitterment. A Monte-Carlo simulation was made on the basis of the data obtained in the experiment in order to determine the P-S-N diagrams of surface crack growth for the degraded and recovered steels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.309-313
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• 2024

The key to determining the lifetime of OLED device is how much brightness can be maintained. It can be said that there are internal and external causes for the degradation of OLED devices. The most important cause of internal degradation is bonding and degradation in the excited state due to the electrochemical instability of organic materials. The structure of OLED modeled in this paper consists of a cathode layer, electron injection layer (EIL), electron transport layer (ETL), light emission layer, hole transport layer (HTL), hole injection layer (HIL), and anode layer on a glass substrate from top to bottom. It was confirmed that the temperature generated in OLED was distributed around the maximum of 343.15 K centered on the emission layer. It can be seen that the heat distribution generated in the presented OLED structure has an asymmetrically high temperature distribution toward the cathode, which is believed to be because the sizes of the cathode and positive electrode are asymmetric. Therefore, when designing OLED, it is believed that designing the structures of the cathode and anode electrodes as symmetrically as possible can ensure uniform heat distribution, maintain uniform luminance of OLED, and extend the lifetime. The thermal distribution of OLED was analyzed using the finite element method according to Comsol 5.2.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.10
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• pp.32-38
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• 2003

This works reports the measurement and analysis results on the hot electron induced device degradation in Gate-All-Around SOI MOSFET's, which were fabricated using commercially available SIMOX material. It is observed that the worst-case condition of the device degradation in nMOSFETs is $V_{GS}$ = $V_{TH}$ due to the higher impact ionization rate when the parasitic bipolar transistor action is activated. It is confirmed that the device degradation is caused by the interface state generation from the extracted degradation rate and the dynamic transconductance measurement. The drain current degradation with the stress gate voltages shows that the device degradation of pMOSFETs is dominantly governed by the trapping of hot electrons, which are generated in drain avalanche hot carrier phenomena.r phenomena.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.279-283
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• 2014

In this paper, we present an economical and practical standard to install a bypass diode in a thin-film PV module. This method helps to reduce heat generation and to prevent module degradation due to excess current from reverse bias. The experimental results confirm that for different numbers of solar cells, there is a relation between the excess reverse current and the degradation of solar cells in a-Si:H modules. The optimal number of solar cells that can be connected per bypass diode could be obtained through an analysis of the results to effectively suppress the degradation and to reduce the heat generated by the module. This technique could be expanded for use in high power crystalline Si PV modules.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.6
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• pp.807-815
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• 2004

In order to evaluate the static stability of hybrid carbody structures of Korean Tilting Train eXpress(TTX) caused by degradation of composites under ground environments, T300/AD6005 graphite/epoxy composite specimens were exposed to accelerated environmental conditions including ultraviolet radiation, temperature and moisture fer 2000 hours. It was found that the stiffness and strength of composites after aging were lower than those of unexposed specimens, and decreased as the aging time increases. The values of the degraded properties were used in the static analysis to check the static stability of hybrid carbody structures caused by environmental degradation of composites. The results shown that the structural stability of hybrid carbody structures was affected by the degradation of composites after exposure to accelerated aging environments.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• Journal of the Korean Society of Safety
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• v.15 no.4
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• pp.8-14
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• 2000

The remaining life estimation for the aged components in power plants as well as chemical plants are very important because mechanical properties of the components are degraded with time of service exposure in the high temperature. Since it is difficult to take specimens from the operating components to evaluate mechanical properties of components, accelerated aging technique are needed to estimate and analyse the material degradation. In the this study, test materials with 4 different degradation levels were prepared by isothermal aging heat treatment at $630^{\circ}C$. And tensile test, $k_{IC}$ test, hardness test and Scanning Electron Microscope analysis were performed in order to evaluate the degradation of 1Cr-1Mo-0.25V steels.

• Journal of Mechanical Science and Technology
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• v.15 no.1
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• pp.26-34
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• 2001

Most research to date concerning the cryogenic toughness of austenitic stainless steels has concentrated on the base metal and weld metal in weldments. The most severe problem faced on the conventional austenitic stainless steel is the thermal aging degradation such as sensitization and carbide induced embrittlement. In this paper, we investigate the cryogenic toughness degradation which can be occurred for austenitic stainless in welding. The test materials are austenitic stainless JN1, JJ1 and JK2 steels, which are materials recently developed for use in nuclear fusion apparatus at cryogenic temperature. The small punch(SP) test was conducted to detect similar isothermally aging condition with material degradation occurred in service welding. The single-specimen unloading compliance method was used to determine toughness degradation caused by thermal aging for austenitic stainless steels. In addition, we have investigated size effect on fracture toughness by using 20% side-grooved 0.5TCT specimens.

• Archives of Metallurgy and Materials
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• v.64 no.3
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• pp.913-916
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• 2019

For the reliable applications of silver nanowires, AgNW, which is used as a conductive transparent film in electronic devices, the isothermal degradation behaviors of AgNW films with and without overcoating were investigated. Accelerated isothermal degradation was performed as a function of temperature, time, and atmosphere. Electrical resistance and optical transmittance were measured and correlated with the microstructural damages, such as formation of oxide particles and fragmentations of AgNW, which were quantitatively determined from the scanning electron micrographs. The overcoating retarded the formation of oxide particles and subsequent fragmentations as well as resulting degradation in electrical resistance without affecting the optical transmittance.