• 대한기계학회논문집
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• 제19권3호
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• pp.713-723
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• 1995

In intelligent machine tools, a computer based control system, which can adapt the machining parameters in an optimal fashion based on sensor measurements of the machining process, should be incorporated. In this paper, the technology for adaptively optimizing the cutting conditions to maximize the material removal rate in face milling operations is proposed using the exterior penalty function method combined with multilayered neural networks. Two neural networks are introduced ; one for estimating tool were length, the other for mapping input and output relations from experimental data. Then, the optimization of cutting conditions is adaptively implemented using tool were information and predicted process output. The results are demonstrated with respect to each level of machining such as rough, fine and finish cutting.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.89-92
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.378-381
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• 2003

The chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.709-712
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• 2002

For the electro-discharge machining of an electro-conductive anisotropic composite, an unsteady state formulation was established and solved by Galerkin's finite element method. The distribution of temperature on work piece, the shape of the crater and the material removal rate were obtained in terms of the process parameters. As the spark was initiated the workpiece immediately started to melt and the heat affected zone was formed. The moving boundary of the crater was also identified with time. When the radial and axial conductivities were increased separately the temperature distribution and the shape of the crater were shifted in the same direction respectively and the material removal rate was found to be higher in the case of increasing radial conductivity rather than the axial conductivity.

• 한국정밀공학회지
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• 제15권6호
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• pp.48-57
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• 1998

Abrasive waterjet(AWJ)은 가공시 열에 의한 가공경화가 없기 때문에 유리, 세라믹, 타이타늄및 금속복합재료와 같은 난삭재의 가공기술로 사용이 증가되었다. Acoustic emission(AE)신호에 의한 AWJ 세라믹 drilling가공시 On-Line Monitoring의 가능성이 고찰되었다. 기계 적인 물성이 서로 상이한 3종류의 세라믹이 본 연구에서 사용되었으며, AE신호는 AWJ drilling의 깊이를 monitoring하는데 유용함을 알 수 있었고 또한 세라믹의 material removal mechanisms을 규명하였다.

• 한국세라믹학회지
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• 제34권10호
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• pp.1092-1098
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• 1997

Electrical discharge machining (EDM) was attempted on a ceramic matrix composite containing non-conductive alumina as a matrix and conductive titania as a second phase, and was found successful. As the current or duty factor increased, the material removal rate (MRR) increased and the surface roughness also increased. The EDMed surface was covered with a number of craters of a circular shape having 100-200 microns of diameter. The melting and evaporation was suggested for the EDM mechanism. The bending strength decreased 44% after EDM, but the Weibull modulus increased more than twice. Combination of EDM and barre이 polishing resulted in the maintenance of the bending strength level. Temperature distribution near a spark in the sample was computer-simulated by use of finite element method, and was found to have similar shape to the one which the observed craters have.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.313-316
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• 2004

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.188-191
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• 2003

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 한국정밀공학회지
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• 제13권11호
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• pp.82-91
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• 1996

In this study, we put our object to carry out adaptive modeling of cutting process in turning system, and to find out the optimal cutting conditions to maximize material removal rate under some constraints. We used a back-propagation neural network to model the cutting process adaptively and a genetic algorithm to find out optimal cutting conditions. The experimental results show that a back-propagation neural network could model the cutting process effciently, and optimized cutting conditions for maximizing the material removal rate were obtained through the adaptive process model and genetic algorithms. Therefore, the proposed approach can be applied to the real machining system.