• Structural Engineering and Mechanics
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• 제29권1호
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• pp.113-116
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• 2008

• 한국자기학회지
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• 제5권5호
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• pp.354-357
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• 1995

Measurements of X-ray diffuse scatterings were made in disordered single crystal of Fe-28.3 at%Pt Invar alloy around a 200-Bragg peak in a wide temperature range between 15 K and 300 K. Observed diffuse scatterings were almost spherical, suggesting a homogeneous disordered alloy. However, the qdependence of the observed thermal diffuse scattering was different from the usual type, indicating a possibility of existence of local distortion of lattice accompanied by a large gradient of stress.

• 한국정밀공학회지
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• 제24권3호
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• pp.55-60
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• 2007

The electro-acoustic guitar pickup converts the vibration of strings to the electric signals, and delivers them to an amplifier. The vibration of the strings is transferred to the piezoelectric material through the saddle. This paper aims to improve sound quality for electro-acoustic guitars through the finite element analysis of the saddle. Firstly, the conventional pickup is modeled and analyzed with a commercial program called ANSYS. It is obvious that there exists interference phenomenon of stress. A structural modification of the pickup is performed, based on the beam theory. The modified structure is modeled and analyzed. Finally, the fabricated structures are subjected to the measurements and compared with the conventional pickup. It can be concluded that the interference with the modified structure is much less than that with the conventional structure, and that the sound quality is improved with the modified structures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.66-66
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• 2009

The photoconductive $CdGa_2Se_4$ layer was grown through the hot wall epitaxy method. From the photocurrent (PC) measurements, the three peaks in the PC spectra were associated with the band-to-band transitions. The PC intensities were observed to decrease with decreasing temperature. The valence-band splitting on $CdGa_2Se_4$ was also observed by means of the PC spectroscopy. The crystal field splitting and the spin orbit splitting turned out to be 0.1604 and 0.4179 eV at 10 K, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.192-192
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• 2009

AZO films were prepared by $Ar:H_2$ gas RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a low temperature of $100^{\circ}C$. To investigate the influence of $H_2$ flow ratio on the properties of AZO films, $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films deposited with 1% $H_2$ addition showed electrical properties with a resistivity of $5.06{\times}10^{-3}{\Omega}cm$. The spectrophotometer-measurements showed the transmittance of 86.5% was obtained by the film deposited with $H_2$ flow ratio of 1% in the range of 940nm for GaAs/GaAlAs LED.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.291.2-291.2
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• 2016

3D semiconductor material of silicon that is used throughout the semiconductor industry currently faces a physical limitation of the development of semiconductor process technology. The research into the next generation of nano-semiconductor materials such as semiconductor properties superior to replace silicon in order to overcome the physical limitations, such as the 2-dimensional graphene material in 2D transition-metal dichalcogenide (TMD) has been researched. In particular, 2D TMD doping without severely damage of crystal structure is required different conventional methods such as ion implantation in 3D semiconductor device. Here, we study a p-type doping technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of hydrochloric acid through Raman spectroscopy and electrical/optical measurements. Where the performance parameters of WSe2 - based electronic device can be properly designed or optimized. (on currents increasing and threshold voltage positive shift.) We expect that our p-doping method will make it possible to successfully integrate future layered semiconductor devices.

• 한국전기전자재료학회논문지
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• 제30권9호
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• pp.572-576
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• 2017

A hybrid transparent electrode was fabricated with graphene and silver nanowires (Ag NWs). Three different processes were used to fabricate the hybrid electrode. Measurements of the sheet resistances, transmittances, and surface roughnesses of the hybrid electrodes were used to identify the optimal fabrication process. The surface roughness of the hybrid electrodes with Ag NWs embedded in a transparent polymer matrix was significantly lower than that of the other hybrid electrodes. A hybrid electrode fabricated by transferring graphene onto Ag NWs after spin-coating the Ag NWs onto the substrate showed the lowest sheet resistance. The transmittance of the hybrid electrodes was comparable to that of Ag NW electrodes.

• 조명전기설비학회논문지
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• 제30권2호
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• pp.37-42
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• 2016

This paper proposes a method to develop a high-precision dimension measurement system using a linear variable differential transformer sensor. The Dimension targets for measurement is carbon material vanes of key element in the rotating parts within vehicle circulating pump. Data acquisition system for dimension measurement is designed using the NI Compact RIO. And the program applying the dimension measurement algorithm is built using NI LabVIEW. The dimension measuring program is composed of a FPGA program, Real Time program and Host program. The method of the experiment compares master vane with target vane for measure the length of the carbon material vane. The experimental results confirmed the usefulness of the accuracy within ${\pm}4um$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.21-23
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• 2002

In this paper, the electrochemical behavior of Viologen self assembly monolayer has been investigated with QCM, which has been known as nano-gram order mass detector. The self assemvly process of Viologen was monitored using resonant frequency $({\Delta}F)$ and resonant resistance(R). QCM measurements indicated a mass adsorption for Viologen assembling on the gold sufrace with a frequency change about 135[Hz] and calculated its surface coverage($\Gamma$) to be $3.5273{\times}10^{-9}[mol/cm^{2}]$. Also reversible redox process was observed and analyzed with ionic interaction at the Viologen/solution interface using ${\Delta}F$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.183-183
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• 2009

본 연구에선 ITO에 사용되는 Indium의 양을 줄이기 위해 ITO와 유사한 성질을 보이는 조성인 Indium - Zinc - Tin Turnary compound를 연구하였다. 각 조성은 Indium - Zinc - Tin Turnary compound를 기본으로 하여 Zinc site에 이종원소인 Al2O3와 Ga2O3를 doping함에 따라 변화되는 전기적 특성을 살며보았다. 분석에 사용한 Ceramic pellet은 일반적인 Ceramic process를 거쳐 제작되었다. 각 조성의 전기적 특성은 TCR meter와 Hall effect analyser를 이용하여 측정하였고, X-ray diffraction measurements(XRD), Scanning Electron microscope(SEM)를 이용하여 결정학적 특성을 분석하였다.