• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.264-267
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• 2004

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the $LaNiO_3$ (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thinfilms were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization Pr and coercive field were $23.5\;C/cm^2$ and 120 kV/cm, respectively.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.865-870
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• 2003

The MFIS (Metal-Ferroelectric-Insulator-Semiconductor) capacitors were fabricated using a metalorganic decomposition method. Thin layers of CeO$_2$ were deposited as a buffer layer on Si substrate and BLT thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated. X -ray diffraction was used to determine the phase of the BLT thin films and the quality of the CeO$_2$ layer. The morphology of films and the interface structures of the BLT and the CeO$_2$ layers were investigated by scanning electron microscopy. The width of the memory window in the C-V curves for the MFIS structure is 2.82 V. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.155-158
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• 2002

Eu-doped lead zirconium titanate $Pb_{1.1}(Zr_{0.3}Ti_{0.7})O_{3}$ thin films on the Pt/Ti/$SiO_2$/Si substrates prepared by a metalorganic decomposition (MOD) method. The effect on the structural and electrical properties of the films measured according to Eu content. Eu-doping altered significantly the dielectric and ferroelectric properties. The remanent polarization and coercive field decreased with increasing the concentration of Eu content. The dielectric constant and dielectric loss of the film decreased with increasing Eu contents. The 3 mol% of Eu-doped PZT thin film showed large remanent polarization and the fatigue characteristic of the film did not change up to $10^9$ switching cycles.

• Journal of Magnetics
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• 제13권3호
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• pp.106-109
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• 2008

Almost monodisperse iron oxide nanoparticles with an average particle size ranging from 5 to 43 nm were fabricated using an environmentally friendly starting material, ferrous acetate. The smallest particles were formed in the presence of a reductant, 1,2-dodecanediol, while the particle size increased with increasing concentration of dispersing agents. The dispersants consisted of various combinations of oleic acid, oleylamine, trioctylphosphine, and polyvinylpyrrolidone. The threshold temperature to form crystalline particles was found to be $240^{\circ}C$. The 43 nm nanoparticles exhibited a room temperature saturation magnetization and coercivity of 57 emu/g and 47 Oe, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.509-512
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• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.169-172
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• 1999

In this experimental study we Proposed the double dielectric barrier discharge (DDBD) reactor to produce as high an electric field as possible. The experiment are conducted for applied voltage from 15 to 20[tV], flow gas rage at 2[1/min] and pulse rate at 120[pulses/s] and 240[pulses/s]. SPD connection of DDBD which combine the surface discharge with the silence discharge was most effective to reduce the NOx. In the decomposition efficiency per watt, the low pulse rate gave hotter efficiency than that of the high pulse rate. However in DeNOx rate, the high pulse rate gave better performance than that of the low pulse rate. NOx removal rate increased with increasing the applied voltage in all reactors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.645-650
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• 2000

The discrete wavelet transform is utilized as processing of neural network(NN) to identifying aging state of internal partial discharge in transformer. The discrete wavelet transform is used to produce wavelet coefficients which are used for classification. The mean values of the wavelet coefficients are input into an back-propagation neural network. The networks, after training, can decide if the test signals is aging early state or aging last state, or normal state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.663-666
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• 2000

Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$$.$4H$_2$O), as a precursor, using a focused Ar$\^$+/ laser beam ($\lambda$= 514 nm) on PCB boards and glass substrates. The linewidth and thickness of the lines were investigated as a function of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler (${\alpha}$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameter using probe station and semiconductor analyzer. we compared resistivities of the patterned lines with that of the Cu bulk, respectively.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.163-167
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• 2003

Ozone is strong and useful oxidizing gas for the fabrication of oxidation thin films. In order to obtain high quality thin film, the ozone concentration must be increased. An ozone condensation system is evaluated in the viewpoint of an ozone supplier for oxidation thin film growth. Ozone is condensed by the adsorption method and ozone concentration reaches 8.5 mol% by 2.5 h after the beginning of the ozone condensation is negligible if the condensed ozone is transferred between the ozone condensation system and the film growth chamber within a few minutes. CuO peak which is the result of the obtained Cu-films using condensed ozone appears by XRD patterns.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.525-528
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• 1997

In this study, Eu(TTA)$_3$(phen) was synthesized and its films were prepared by vapor deposition method. Its films were characterized by UV-Vis absorption spectroscopy, Atomic Force Microscopy(AFM) and Photoluminescence(PL) measurements. Their electroluminescent(EL) characteristics were investigated by PL measurements, where a cell structure of glass substrate/ITO/Eu(TTA)$_3$(phen)/Al was employed. It was found that its films were well prepared without any decomposition and the film thickness could be controlled by adjusting the amount of Eu(TTA)$_3$(phen) in a boat. The EL spectrum of these films was almost the same as that of PL spectrum of these films.