• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.104-110
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• 2001

Structural, optical and electrical properties of Cd$_{1-x}$ Zn$_{x}$S films deposited by chemical bath deposition(CBD), which is a very attractive method for low-cost and large-area solar cells, are presented. Especially, in order to control more effectively the zinc component of the films, zinc acetate, which was used as the zinc source, was added in the reaction solution after preheating the reaction solution and the pH of the reaction solution decreased with increasing the concentration of zinc acetate. The films prepared after preheating and pH control had larger zinc component and higher optical band gap. The crystal structures of Cd$_{1-x}$ Zn$_{x}$S films was a wurtzite type with a preferential orientation of the (002) plane and the lattice constants of the films changed from the value for CdS to those for ZnS with increasing the mole ratio of the zinc acetate. The minimum lattice mismatch between Cd$_{1-x}$ Zn$_{x}$S and CdTe were 2.7% at the mole ratio of (ZnAc$_2$)/(CdAc$_2$+ZnAc$_2$)=0.4. As the more zinc substituted for Cd in the films, the optical transmittance improved, while the absorption edge shifted toward a shorterwavelength. the photoconductivity of the films was higher than the dark conductivity, while the ratio of those increased with increasing the mole ratio of zinc acetate. acetate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.326-326
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• 2010

The dielectric properties of continuous composition spreaded (CCS) $BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and $550^{\circ}C$) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by $200{\times}200\;{\mu}m2$ and apart from each other by $300\;{\mu}m$, were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from $BaTiO_3$ and $SrTiO_3$ targets which was attributed to the $BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via $1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found.

• Journal of Korean Society of Steel Construction
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• v.14 no.1
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• pp.105-111
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• 2002

A post-tensioned slab bridge is analyzed by the specially orthotropic laminates theory. Both the geometry and the material of the cross section of the slab are considered symmetrical with respect to the mid-surface so that the bending extension coupling stiffness, $B_{ij}=0$, and $D_{16}=D_{26}=0$. Each longitudinal and transverse steel layer is regarded as a lamina, and material constants of each lamina is calculated by the use of rule of mixture. This bridge with simple support is under uniformly distributed vertical and axial loads. In this paper, the finite difference method and the beam theory are used for analysis. The result of beam analysis is modified to obtain the solution of the plate analysis. The result of this paper can be used for post-tensioned slab bridge analysis by the engineers with undergraduate study in near future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.111-120
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• 1998

In this paper, the $(SrPb)(CaMg)TiO_3$ ceramics with paraelectric properties were fabricated by the mixed oxide method. It was investigated that which the variation of contents of $Bi_2O_3{\cdot}3TiO_2$ effects on structural, dielectrical and electrical properties of specimens. As a result, the grain size were grown with increasing the contents of $Bi_2O_3{\cdot}3TiO_2$. The relative dielectric constants were increased up to 4[mol%] of $Bi_2O_3{\cdot}3TiO_2$, and decreased more or less at a low temperature in the specimens which had more than. But the temperature coefficient. of capacitance were showed ${\pm}25$[%]. The dielectric loss were less than 0.05 in all specimens which had more than 4[mol%] of $Bi_2O_3{\cdot}3TiO_2$. In order to investigate the behavior of charged particles, the characteristics of electrical conduction were measured. As a result, the conduction current was divided into the three steps as a function of DC electric field. The first step was Ohmic region due to ionic conduction, below 15[kV/cm]. The second step was showed a saturation which seems to be related to a depolarizing field occuring in field-enforced ferroelectric phase, between 15[kV/cm] and 40[kV/cm]. The third step was attributed to Child's law related to space charge which injected from electrode, above 40[kV/cm].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.56-59
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• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Structural Engineering and Mechanics
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• v.65 no.4
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• pp.491-504
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• 2018

Because of sandwich structures with low weight and high stiffness have much usage in various industries such as civil and aerospace engineering, in this article, buckling and free vibration analyses of coupled micro composite sandwich plates are investigated based on sinusoidal shear deformation (SSDT) and most general strain gradient theories (MGSGT). It is assumed that the sandwich structure rested on an orthotropic elastic foundation and make of four composite face sheets with temperature-dependent material properties that they reinforced by carbon and boron nitride nanotubes and two flexible transversely orthotropic cores. Mathematical formulation is presented using Hamilton's principle and governing equations of motions are derived based on energy approach and applying variation method for simply supported edges under electro-magneto-thermo-mechanical, axial buckling and pre-stresses loadings. In order to predict the effects of various parameters such as material length scale parameter, length to width ratio, length to thickness ratio, thickness of face sheets to core thickness ratio, nanotubes volume fraction, pre-stress load and orthotropic elastic medium on the natural frequencies and critical buckling load of double-bonded micro composite sandwich plates. It is found that orthotropic elastic medium has a special role on the system stability and increasing Winkler and Pasternak constants lead to enhance the natural frequency and critical buckling load of micro plates, while decrease natural frequency and critical buckling load with increasing temperature changes. Also, it is showed that pre-stresses due to help the axial buckling load causes that delay the buckling phenomenon. Moreover, it is concluded that the sandwich structures with orthotropic cores have high stiffness, but because they are not economical, thus it is necessary the sandwich plates reinforce by carbon or boron nitride nanotubes specially, because these nanotubes have important thermal and mechanical properties in comparison of the other reinforcement.

• Environmental Engineering Research
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• v.25 no.4
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• pp.529-535
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• 2020

The present study investigated the photodegradation of synthetic organic dye; violet-3B, without and with the addition of C-N-codoped TiO₂ catalyst using a visible halogen-lamp as a light source. The catalyst was synthesized by using a peroxo sol-gel method with free-organic solvent. The effects of initial dye concentration, catalyst dosage, and pH solution on the photodegradation of violet-3B were examined. The efficiency of the photodegradation process for violet-3B dye was higher at neutral to less acidic pH. The kinetics reaction rate of photodegradation of violet-3B dye with the addition of C-N-codoped TiO₂ followed pseudo-first order kinetics represented by the Langmuir-Hinshelwood model, and increasing the initial concentration of dyes decreased rate constants of photodegradation. Photodegradation of 5 mg L^-1 violet-3B dye achieved 96% color removal within 240 min of irradiation in the presence of C-N-codoped TiO₂ catalyst, and approximately 44% TOC was removed as a result of the mineralization.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.12
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• pp.1619-1625
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• 2012

An electrical steel strip is commonly used as a core material in all types of electric transformers and motors. It is produced by a cold rolling process. In this paper, a damage-mechanics-based approach that predicts the edge fracture of an electrical steel strip during cold rolling is presented. We adopted the normal tensile stress criterion and the fracture energy method as a damage initiation criterion and a damage evolution scheme, respectively. We employed finite element analysis (FEA) to simulate crack initiation and propagation at the initial notch located at the edges of the strip. The material constants required in FEA were experimentally obtained by tensile tests using a standard and a notched sheet-type specimen. The results reveal that the edge crack was initiated at the entrance of the roll bite and that it rapidly evolved at the exit. The evolution length of the edge crack increased as the length of the initial notch as well as the front tension reel force of the strip increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.