• The Journal of Engineering Geology
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• v.15 no.3
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• pp.337-348
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• 2005

Jurassic granite from Pocheon area were tested to investigate the effect of microcracks on mechanical properties of the granite. Three oriented core specimens were used for uniaxial compressive tests and each core specimen are perpendicular to the axes'R'(rift plane),'c'(grain plane) and'H'(hardway plane), respectively Among vacious elastic constants, the variation of Poisson's ratio as function of the directions was examined. From the related chart between ratio of failure strength and Poisson's ratio, H-specimen shows the highest range in Poisson's ratio and Poisson's ratio decreases in the order of C-specimen and R-specimen. The curve pattern is nearly linear in stage $I\simIII$ but the slope increases abruptly in stage H-3. As shown in the related chart, diverging point of a curve is formed when ratio of failure strength is $0.92\sim0.96$ Stage IV -3 is out of elastic region. The behaviour of rock in the four fracturing stages was analyzed in term of the stress-volumetric strain me. From the stress increment-volumetric strain equations governing the behaviour of rock, characteristic material constants, a, n, Q, m and $\varepsilon_v^{mcf}$, were determined. Among these, inherent microcrack porosity$(a, 10^{-3})$ and compaction exponent(n) in the microcrack closure region(stage I ) show an order of $a^R(3.82)>a^G(3.38)>a^H(2.32)\;and\;n^R(3.69)>n^G(2.79)>n^H(1.99)4, respectively. Especially, critical volumetric microcrack strain($\varepsilon_v^{mcf}$) in the stage W is highest in the H-specimen, normal to the hardway plane. These results indicate a strong correlation between two major sets of microcracks and mechanical properties such as Poisson's ratio and material constants. Correlation of strength anisotropy with microcrack orientation can have important application in rock fracture studies.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2005.09a
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• pp.201-212
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• 2005

[ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.771-776
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• 2004

[ $Ba(Zr_{0.08}Ti_{0.92})O_3$ ] polycrystal was grown by floating zone technique with two ellipsoidal mirrors using the $8\%$of Zr-modified BZT ceramics as both a feed rod and a seed crystal. In order to study the annealing effect, a part of the grown crystal was sliced and annealed in the oxygen atmosphere at $1,200^{\circ}C$ for 10 h. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz were measured in the temperature range between $-100^{\circ}C$ and $150^{\circ}C$ to investigate the dielectric properties of the grown polycrystal. The electric-field dependence of the dielectric constant at 10 kHz and 100 kHz was studied by measuring the dielectric constants as a function of the biased-electric fields which ran from -15 kV/cm to 15 kV/cm. Due to the effect of annealing in the oxygen atmosphere, the electric-field tunability of dielectric constants increased from $47.5\%$ to 5 to and the figure of merit for this material from 39.6 to 46.4. Since the figure of merit can be increased to more than 46.4 by increasing the maximum value of the biased-electric fields to more than 15 V/cm, this material nay have a possibility for applications in microwave tuning devices at room temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.3
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• pp.500-506
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• 2015

In this paper, we designed and fabricated the EM wave absorber consisted of Sendust for suppressing EM wave noise PCB in ISM (Industrial, Scientific and Medical) band of 2.4 GHz. We fabricated several samples with different composition ratios of some kinds of Sendust to CPE (Chlorinated Ploy-ethylene) as a binder, and it was confirmed that the optimum composition ratio of absorbing materials was Flaked Sendust : CPE = 72.5 : 27.5 wt.%.. The absorbing abilities were simulated by changing the thickness and the measured material constants of EM wave absorber. The measured absorption abilities were analyzed and compared with the simulated ones. As a result, the simulated results agree well with the measured ones, and the developed EM wave absorber with extremely thin thickness of 0.6 mm has absorption ability of 5.4 dB at 2.4 GHz is excellent one. The thin type EM wave absorber can be applied for suppressing and absorbing electromagnetic noises from information and communication equipments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1077-1082
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• 2008

To fabricate a multi-layered piezoelectrics/electrodes structure, the piezoelectrics should be sintered at the temperature lower than $950^{\circ}C$ to use the silver electrode, which is cheaper than the electrodes containing noble metals such as Pd and Pt. Therefore, in this study, we modified the composition of $Pb(Zr,Ti)O_3$-based material as $(Pb_{0.98}Cd_{0.02})(Ni_{1/3}Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}O_3$ to lower the sintering temperature and to improve the piezoelectric properties. Small amount of $MnCO_3$, $SiO_2$, and $Pb_3O_4$ were also added to lower the sintering temperature of the ceramic. The prepared raw powders were mixed by using a ball mill for 24 hours. And then the mixed powders were calcinated for 2 hours at $800^{\circ}C$. The calcinated powders were again crushed with the ball mill for 72 hours. The final powders were pressed for making the shape of ${\emptyset}15\;mm$ disk. The disk-type samples were sintered at temperature range of $850{\sim}950^{\circ}C$. The crystal phases of the sintered specimens were perovskite structure without secondary phases. All of the measured electrical properties such as electromechanical coupling coefficients ($k_p$), mechanical quality factors ($Q_m$), and piezoelectric charge constants ($d_{33}$) were decreased with decreasing the sintering temperatures. The electrical properties measured at the sample sintered at $950^{\circ}C$ were 54% of $k_p$, 503 of $Q_m$, and 390 pC/N of $d_{33}$, respectively. These properties were considered to be fairly good for the application of multi-layered piezoelectric generators or actuators.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.989-995
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• 2000

G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ is a very promising material for the high-speed device due to the fact that electron and hole mobilities for the strained G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ are greatly enhanced. Because G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ has a direct band gap for the proper combination of x and y, it can be applied to the optoelectronic device. Therefore, the study of the electrical property for G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$(001) with a direct energy gap is needed. G $e_{1-x}$ S $n_{x}$ layer can not be grown thickly due to the large difference of lattice constants. This fact prefers the structure of the device where electrons and holes move in the plane direction. The transverse mobilities of electron and hole for G $e_{0.8}$S $n_{0.2}$Ge(001) are 2~3 times larger than those for Ge/Ge/ sub0.8/S $n_{0.2}$(001). Therefore, G $e_{0.8}$S $n_{0.2}$Ge(001) is expected to be better than Ge/G $e_{0.8}$S $n_{0.2}$(001) for the development of the high-speed device.h-speed device.device.h-speed device. device.

• Geophysics and Geophysical Exploration
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• v.6 no.2
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• pp.77-86
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• 2003

We designed a new time-domain, finite-difference, elastic wave modeling technique, based on a displacement formulation. which yields nearly correct solutions to Lamb's problem. Unlike the conventional, displacement-based, finite-difference method using a node-based grid set (where both displacements and material properties such as density and Lame constants are assigned to nodal points), in our new finite-difference method, we use a cell-based grid set (where displacements are still defined at nodal points but material properties within cells). In the case of using the cell-based grid set, stress-free conditions at the free surface are naturally described by the changes in the material properties without any additional free-surface boundary condition. Through numerical tests, we confirmed that the new second-order finite differences formulated in the cell-based grid let generate numerical solutions compatible with analytic solutions unlike the old second-order finite-differences formulated in the node-based grid set.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.9
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• pp.1117-1125
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• 2013

A finite element based approach that can be used to investigate the plane-view shape and crop loss of a material during plate rolling is presented. We employed a three-dimensional finite element model to continuously simulate the shape change of the head and tail of a plate as the number of rolling passes increases. The main feature of the proposed model lies in the fact that the multistage rolling can be simulated without a break because the rolling direction of the material is reversibly controlled as the roll gap sequentially decreases. The material constants required in the finite element analysis were experimentally obtained by hot tensile tests. We also performed a pilot hot plate rolling test to verify the usefulness of the proposed finite element model. Results reveal that the computed plane-view shapes as well as crop losses by the proposed finite element model were in good agreement with the measured ones. The crop losses predicted by the proposed model were within 5% of those measured from the pilot hot plate rolling test.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.11
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• pp.1521-1528
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• 2011

We studied the material properties for reliability improvement in finite element analysis results for a nitrile butadiene rubber hub-bearing seal and for a carbon-filled rubber mount used in a vehicle. It was difficult to measure the material properties of hundreds of types of rubber for the mount design. Thus, we suggested that the engineering stressstrain relations from pure shear test data could be synthesized by using simple tension data and Poisson's ratio. We defined Poisson's ratio by using a function of principal stretches to synthesize the stress-strain relations for a pure shear test. A transformation of the pure shear data was applied to the experimental values to obtain the predicted results when the strain approaches 100%. In the finite element analysis for the contact force of a hub-bearing seal, the strain results that used the transformation of the pure shear data and simple tension data almost corresponded to the experimental values. Ogden constants were used to analyze.