• Progress in Superconductivity and Cryogenics
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• v.11 no.3
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• pp.1-5
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• 2009

It is important to predict AC loss in $Nb_3Sn$ and NbTi cable-in-conduit-conductor (CICC) reliably for the design and operation of large superconducting coils. The hysteresis loss in the superconducting filaments and coupling loss within strands and among strands in a cable or composite are dominant ac losses in superconducting magnets. The coupling loss in a superconductor can be characterized by identifying the coupling constant time $n{\tau}$. To reduce the coupling loss, all the strands (superconductor and Cu) in KSTAR (Korea Superconducting Tokamak Advance Research) are chromium plated with thickness of $l{\pm}0.5{\mu}m$. The ac losses of PF1, PF5 and PF6 coils has been measured by calorimetric method while applying trapezoidal current pulses with various ramp rate from 0.5 kA/s to 2 kA/s. The coupling time constants for $Nb_3Sn$ coils are $25{\sim}55$ ms and the values are not co-related with the coil size, the time constants for NbTi coil is 30 ms.

• Journal of Ocean Engineering and Technology
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• v.25 no.3
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• pp.53-65
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• 2011

This is the third of several companion papers dealing with the derivation of material constants for ductile failure criteria under hydrostatic stress. It was observed that the ultimate engineering stresses and elongations at fracture from tensile tests for round specimens with various notch radii tended to increase and decrease, respectively, because of the stress triaxiality. The engineering stress curves from tests are compared with numerical simulation results, and it is proved that the curves from the two approaches very closely coincide. Failure strains are obtained from the equivalent plastic strain histories from numerical simulations at the time when the experimental engineering stress drops suddenly. After introducing the new concept of average stress triaxiality and accumulated average strain energy, the material constants of the Johnson-Cook failure criterion for critical energies of 100%, 50%, and 15% are presented. The experimental results obtained for EH-36 steel were in relatively good agreement with the 100% critical energy, whereas the literature states that aluminum fits with a 15% critical energy. Therefore, it is expected that a unified failure criterion for critical energy, which is available for most kinds of ductile materials, can be provided according to the used materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.237-238
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• 2006

The electrical properties such as dielectric constants and dielectric losses in the spinel samples of $LiGaTiO_4$, Li(Ga,Eu)$TiO_4$, $Li(Ga.Yb)TiO_4$ have been characterized by varying measuring temperature and frequency. The long range order structures are analyzed by rietveld refinement method. and local atomic disorder structures are analyzed by MEM (maximum entropy method). The relation between the crystal structure and dielectric properties are discussed. $LiGaTiO_4$ spinel has the IMMA with lattice constant, a = 5.86333, b=17.5872. c = 8.28375 ${\AA}$, Li-sites are partially substituted by Ga or Ti. Two crystallographic oxygen sites are partially occupied(40~50%). The dielectric constants of $LiGaTiO_4$, $LiYbTiO_4$, and $LiGa_{2/6}Eu_{1/6}Ti_{1.5}O_4$ ceramics were 127, 75 and 272, respectively at 100 kHz. The dielectric relaxation were observed in the $LiGaTiO_3$ ceramics and the temperature where dielectric loss shows maximum was $390^{\circ}C$ at 1 kHz and increased with increasing the measuring frequency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.244-248
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• 2001

According to the progress of the electronic industry and radio communication technologies, mankind might enjoy its abundant life. On the other hand, many social problems such as EMI, and unnecessary electromagnetic wave occur due to the increased use of electromagnetic wave. Therefore, the organizations such as CISPR, FCC, ANSI, etc. have provided the standard of electromagnetic wave environment for the countermeasure of the EMC. It had been required that the absorbing ability of an electromagnetic wave absorber is more than 20dB, the bandwidth of which is required through 30 MHz to 1,000 MHz for satisfying the international standard about an anechoic chamber for EMI/EMS measurement. From November of 1998, however, the CISPR11 has accepted the extended frequency band from 1 GHz to 18 GHz additionally in the bandwidth of EMI measurement[1]. In this paper, we proposed a new type absorber satisfying the above requirements and carried out broadband design using the equivalent material constants method. Futhermore, the experiments were carried out over the frequency band from 30 MHz to 2 GHz, and hence, the validity of the proposed design theory was confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.300-305
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• 2000

We have investigated the dielectric and electrical characteristics of palmitic acid(PA) stearic acid(SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one(methylene group or alkyl chain length). The fatty acid systems were used as LB films and the status of the deposited films was confirmed by evaluating the transfer ratio the UV absorption and the capacitance. The dielectric characteristics such as the frequency-capacitance characteristics and the dielectric dispersion and absorption characteristics of PA SA and AA through-plane were measured. The relative dielectric constants of PA, SA and AA LB films were about 3.0~4.6, 2.7~3.0 and 2.4~3.0 respectively. That is the relative dielectric constants were decreased in proportion to the chain length of methylene group. Also the dielectric dispersion and absorption of each fatty acid LB films have arisen from spontaneous polarization of dipole polarization in the range of 10$^4$~10$^{5}$ ［Hz］. The conductivity of PA, SA and AA LB films obtained from I-V characteristics were about 9$\times$10$^{-14}$ , 3$\times$10$^{-14}$ and 5$\times$10$^{-15}$ ［S/cm］. respectively. These results have shown the insulating materials and could control the conductivity y changing the length of methylene group. Also we have confirmed that the barrier height of fatty acid systems were almost the same ones obtained from dielectric characteristics.

• Steel and Composite Structures
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• v.27 no.2
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• pp.201-216
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• 2018

In this paper, three-dimensional (3D) elasticity theory in conjunction with nonlocal strain gradient theory (NSGT) is developed for mechanical analysis of anisotropic nanoparticles. The present model incorporates two scale coefficients to examine the mechanical characteristics much accurately. All the elastic constants are considered and assumed to be the functions of (r, ${\theta}$, ${\varphi}$), so all kind of anisotropic structures can be modeled. Moreover, all types of functionally graded spherical structures can be investigated. To justify our model, our results for the radial vibration of spherical nanoparticles are compared with experimental results available in the literature and great agreement is achieved. Next, several examples of the radial vibration and wave propagation in spherical nanoparticles including nonlocal strain gradient parameters are presented for more than 10 different anisotropic nanoparticles. From the best knowledge of authors, it is the first time that 3D elasticity theory and NSGT are used together with no approximation to derive the governing equations in the spherical coordinate. Moreover, up to now, the NSGT has not been used for spherical anisotropic nanoparticles. It is also the first time that all the 36 elastic constants as functions of (r, ${\theta}$, ${\varphi}$) are considered for anisotropic and functionally graded nanostructures including size effects. According to the lack of any common approximations in the displacement field or in elastic constant, present theory can be assumed as a benchmark for future works.

• Journal of Navigation and Port Research
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• v.34 no.1
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• pp.27-31
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• 2010

In this paper, we developed an EM wave absorber having the absorption ability of more than 15 dB for port logistics RFID system by using AMP. Firstly, we fabricated EM wave absorber by using AMP and CPE(Chlorinated Polyethylene) with different composition ratios 80:20 wt.% and 85:15 wt.%. Secondly, we designed the optimum EM wave absorber using the calculated material constants obtained from measured input impedance of the samples. Therefore, EM wave absorber with absorption ability of 17.5 dB at 433 MHz when composition ratio of AMP:CPE=85:15 wt.% and thickness of 5.5 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.343-346
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• 1999

We have investigated the dielectric and electrical characteristics of palrnitic acid(PA), stearic acid(SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one(alky1 chain lqngth). The dielectric characteristics such as the capacitance-frequency(C-F) characteristics and the dielectric dispersion and absorption characteristics of PA, SA and AA through-plane were measured. In the result, the relative dielectric constants of PA, SA and AA LB films were about 3.0-4.6, 2.7-4.1 and 2.4-3.8, respectively. The relative dielectric constants were decreased in proportion to the chain length of alkyl group. Also, the dielectric dispersion and absorption of each fatty acid LB films have arisen from the dipole polarization in the range of $10^4~10^5[Hz]. And, the conductivity of PA, SA and AA LB films obtained from I-V characteristics were about $9{\times}10^{-14}, 3{\times}10^{-l4} and 5{\times}10^{-15}[S/cm], respectively. These results have shown the insulating materials and could control the conductivity by changing the length of alkyl group. Also, we have confirmed that the barrier height of fatty acid systems were about 1.32-1.40[eV] and the dielectric constant were about 3.0-4.2. These values were almost the same ones obtained from dielectric characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.97-100
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• 2002

$CdGaInS_{4}:Er^{3+}$ single crystal crystallized in the rhombohedral. with lattice constants a = 3.899 $\AA$ and c = 36.970 $\AA$ for $CdGaInS_{4}:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of this compound had a direct and indirect band gaps. the direct and indirect energy gaps are found to be 2.665 and 2.479eV for $CdGaInS_{4}:Er^{3+}$ at 10 K. The photoluminescence spectra of $CdGaInS_{4}:Er^{3+}$ measured in the wavelength ranges of 500 nm~900 nm and 1500~1600 nm at 10 K. Eight sharp emission peaks due to $Er^{3+}$ ion are observed in the regions of 549.5~560.0nm. 661.3~676.5nm. 811.1~ 834.1 nm and 1528.2~1556.0 nm in $CdGaInS_{4}:Er^{3+}$ single crystal. These PL peaks were attributed to the radiative transitions between the split electron energy levels of the $Er^{3+}$ ions occupied at $C_{2v}$ symmetry of the $CdGaInS_4$ single crystals host lattice.