• 토지주택연구
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• 제3권1호
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• pp.83-88
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• 2012

In this study, physical characteristics of cement and/or concrete materials that are typically used for energy-foundation (EF) structures have been studied. The thermal conductivity and structural integrity of the cement-based materials were examined, which are commonly encountered in backfilling a vertical ground heat exchangers, cast-in-place concrete piles and concrete lining in tunnel. For this purpose the thermal conductivity and unconfined compression strength of cement-based materials with various curing conditions were experimentally estimated and compared. Hydration heat generated from massive concrete in the cast-in-place concrete energy pile was observed for 4 weeks to estimate its dissipation time in the underground. The hydration heat may mask the in-situ thermal response test (TRT) result performed in the cast-in-place concrete energy pile. It is concluded that at least two weeks are needed to dissipate the hydration heat in this case. In addition, a series of numerical analysis was performed to compare the effect of thermal property of the concrete material on the cast-in-place pile.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.56-59
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• 1997

SAW filters of transversal type were fabricated on some piezoelectric substrates of the LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$Y-X, Quartz ST-cut wafers through the simulation in which the number o: IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 3 ${\mu}{\textrm}{m}$, chip size was 4.462 $\times$ 2.086 mm$^2$, and they had double electrode transversal type IDTs. In addition to pure Al electrode devices, Ti thin films having the different thicknesses was introduced between the Al electrode and the substrate for improving the power resistance strength. They had 11-12 dB insertion losses similar to those of pure Al electrode SAW filters in case of LN 128$^{\circ}$ Y-X, LN 64$^{\circ}$ Y-X, meaning that Ti thin film was not detrimental to the insertion loss and general frequency properties. The filters had the center frequencies 162MHz for LN 128$^{\circ}$ Y-X, 186MHz for 64$^{\circ}$ Y-X, and 131MHz for Quartz ST-cut substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.331-332
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• 2007

Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.371-375
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• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.132-135
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• 2003

핸드폰에 장착된 반투과형 LCD (Liquid Crystal Display) 패널에서 반사판을 제거하면 투과형 LCD 마스크로 이용할 수 있다. LCD 패널의 광 흡수 실험에서 얻은 스펙트럼을 참고하여 다양한 파장대의 광원으로 리소그래피 하였다. 컴퓨터 이미지 프로그램으로 편집한 그림을 핸드폰 전용 통신 케이블을 통하여 LCD 패널로 전송하여, 다양한 모양의 패턴을 기판위에 전사하는데 성공하였다. 픽셀간의 경계가 현상되어 끊어지는 패턴이 형성되는 LCD 마스크의 단점을 극복하여 연속적인 패턴결과를 얻는데도 성공하였다. 이로부터 프로젝션 리소그래피의 응용에 쉽게 접근할 수 있는 발판이 마련된 것으로 생각된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.200-200
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• 2013

기존 메모리 반도체에 비교해 빠른 재생속도와 높은 집적도, 비휘발성 등의 특성을 가지는 MRAM (Magnetic Random Access Memory)은 DRAM, flash memory 등을 대체할 수 있는 차세대 기억 소자로서 CoFeB/MgO/CoFeB로 구성된 한 개의 MTJ (Magnetic Tunnel Junction)를 단위 메모리로 사용한다. 이 MTJ 물질들은 고밀도 플라즈마를 이용한 건식 식각공정시 Cl2, BCl3 등과 같은 chlorine 을 포함한 가스를 이용하여 왔으나 식각 후 sidewall에서 발생하는 부식과 식각 선택비 확보의 어려움 등으로 마스크 물질에 제약을 받고 소자 특성이 감소하게 되는 등의 문제가 있다. 따라서 이러한 식각 문제점을 해결하기 위한 대안으로 noncorrosive 가스인 CO/NH3, CH3OH, CH4 등을 이용한 MTJ 식각 연구가 진행되어 오고 있으며 이중 CO/NH3 혼합가스는 부식성이 없고 hard mask와의 높은 선택비를 가지는 기체로 CO gas에 NH3 gas를 첨가하게 되면 etch rate이 증가하는 특성을 보인다. 또한 rf pulse-biased power를 이용하여 이온의 입사를 시간에 따라 제어함으로써 pulse off time 때 etch gas와 MTJ 물질간의 chemical reaction을 향상시킬 수 있다. 따라서 본 연구에서는 CO/NH3 혼합가스를 이용하여 다양한 rf pulse-biased power 조건에서 MTJ 물질인 CoFeB, MgO와 hard mask 물질인 W을 식각 한 뒤 식각특성을 분석하였으며 MTJ surface의 chemical binding state, surface roughness 측정을 진행하였다. 식각 샘플의 측정은 Alpha step profiler, XPS (X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy)를 통해 진행되었다. Time-averaged pulse bias에서는 duty ratio가 감소할수록 etch rate의 큰 감소 없이 CoFeB/W, MgO/W 물질의 etch selectivity가 향상됨을 확인할 수 있었으며 pulse off time 구간에서의 chemical reaction 향상으로 인해 식각부산물의 재증착이 감소하고 CoFeB의 surface roughness가 감소하는 것을 확인하였다.

• 디지털융복합연구
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• 제17권2호
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• pp.363-371
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• 2019

본 연구의 목적은 빅토르 위고(Victor Hugo)의 <크롬웰, Cromwell,1827> 서문의 그로테스크한 특성을 살피고, 니체의 고대 <그리스 비극>에 나타난 '사티루스(Satyros)'의 그로테스크한 현상을 빅토르 위고의 그로테스크와 차이점 및 공통점을 규명하기 위함이었다. 또한, 빅토르 위고와 니체의 공통점은 중세에 관심이 있었는데, 어떤 차이가 있는지 살펴보고자 했다. 연구의 주요결과는 빅토르 위고의 그로테스크 현상은 니체의 <그리스 비극>에서 디오니소스 극장의 '사티루스'에서 드러난다. 그것을 분류하면 첫째, 외형적인 부분에서 인간과 동물이 혼합된 형상을 한다. 둘째, '사티루스'가 익살스럽고 우스꽝스러운 분위기에서 가면을 그로테스크한 소재로 활용한 부분이다. 그로테스크에 대한 미학적, 철학적 정의가 세기마다 다양한 방법으로 있었지만, 아직도 그로테스크에 대해서 연구가 부족한 실정이다. 향후 후속연구는 시간의 흐름에 따른 사회적 현상에서 세부적인 연구가 진행되야 할 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.67-67
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• 2008

Application of organic materials with low cost, easy fabrication and advantages of flexible device are increasing attention by research work. Recently, one of them, organic solar cells were rapidly increased efficiency with regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyricacidmethylester (PCBM) used typical material. To increased efficiency of organic solar cell has tried control of domain of PCBM and crystallite of P3HT by thermal annealing and solvent vapor annealing. [4-6] In those annealing effects, be made inefficiently efficiency, which is increased fill factor (FF), and current density by phase-separated morphology with blended P3HT and PCBM. In addition, increased conductivity by modified hole transfer layer (HTL) such as Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), increased both optical and conducting effect by titanium oxide (TiOx), and changed cathode material for control work function were increased efficiency of Organic solar cell. In this study, we had described effect of organic photovoltaics by conductivity of interlayer such as PEDOT:PSS and TCO (Transparent conducting oxide) such as ITO, which is used P3HT and PCBM. And, we have measured with exactly defined shadow mask to study effect of solar cell efficiency according to conductivity of hole transfer layer.

• Applied Microscopy
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• 제8권1호
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• pp.49-52
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• 1978

Mask cells are distributed in the animal tissue, The bat subject has not been studied with the electron microscope, The material was fixed in 2.5% phosphate buffered glutaraldehyde for 24 hours at $4^{\circ}C$ and then post-fixed in phosphate buffered 1% osmium tetroxide for 2 hours at $4^{\circ}C$ and then the cleared tissues were embedded in Epon. The mast cell has numerous cytoplasmic processes projecting into the surrounding connective tissue. In general, the cytoplasmic granules showed ovoid, round, lunal or irregular shape, most of them were fine particulate substructure in texture. Especially, the granules was enclosed by the lamella structure.