• 대한가정학회지
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• 제47권2호
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• pp.15-26
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• 2009

The purpose of this study is to research development process of commedia dell'arte and Korean masque that have similar figure, grasp similarity and difference and find the meaning of masque and costume in both theatrical arts. Italian commedia dell'arte and Korean masque are performed by wearing standardized mask and costume depending on the role. As common points, first, the characters have unique names and possess unique features of character, costumes, masks and playing styles. Through the feature, the audiences can understand role of actor and the actors can devote themselves to their role by wearing masks and costumes. Second, although background plays an important role in commedia dell'arte, the role of costume is more important. Because masque speaks for poverties of general people indirectly, the costumes of general people were used as they are. As different point, first, most of Korean masks cover entire face, restricting speech of actor but masks of commedia dell'arte cover only upper part of face and expos mouth and chin of actor, enabling actors to express various emotions depending on the character. Second, priority is given to personality of actor and origin area and current silhouette, material and color that changed by century is reflected in the costume of commedia dell'arte but silhouette, material and color of the Age of Joseon Dynasty were adopted in Korean masque.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1005-1008
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• 2009

In this study, adaptively coupled plasma (ACP) source was used for dry etching of $Al_2O_3$ thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of $Al_2O_3$ thin film to mask materials and the etch profile as functions of $Cl_2$/Ar gas ratio and substrate temperature. The highest etch rate of $Al_2O_3$ was 65.4 nm/min at 75% of $Cl_2/(Cl_2+Ar)$ gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of $Al_2O_3$ thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).

• 한국자기공명학회논문지
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• 제14권1호
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• pp.38-44
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• 2010

In liquids NMR, $^{1}H$ is the most widely observed nucleus, which is not the case in solids NMR. The reason is due to the strong homo-dipolar interactions between the hydrogen atoms which mask the useful chemical shift information. Therefore we must remove the strong homo-dipolar interactions in order to get structural information, which can be investigated by the isotropic chemical shift. There are two ways of obtaining it. One is the ultra-fast MAS of ca. 70 kHz spinning speed, which has become available only recently. The other way is devising a pulse sequence which can remove the strong homo-dipolar interaction. In the latter way, MAS with a moderate spinning rate of a few kHz, is enough to remove the chemical shift anisotropy. In this report, 1D-CRAMPS and 2D MASFSLG techniques are utilized and their results will be compared. This kind of highresolution $^{1}H$ NMR for solids, should become a valuable analytical tool in the understanding and the developing of a new class of hydrogen storage materials. Here ammonium borane $-NH_{3}BH_{3}$, whose hydrogen content is high, is used as a sample.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.109-112
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• 1998

SAW filters of transversal type were fabricated on some piezoelectric substrate of the LN 128 $^{\circ}$ Y-X waters through the simulation in which the number of IDT and window function were changed for the required frequency, and the mask making. Their IDT spacing and width were 1.63$\mu\textrm{m}$, 1.239$\mu\textrm{m}$, respectively. Titanium thin films having different thicknesses were introduced between the Al electrode and the substrate for improving the power resistance strength due to its high temperature durability and good adhesion characteristics. All of specimens showed similar insertion loss results, which means the possibility of introducing the Ti layer though it is known to have a higher resistivity leading to a worse insertion loss result. Ti inserted specimens had a better power durability than that of pure Al electrode though their thickness had no effect on the performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1096-1099
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• 2001

The basic design structure of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) is firstly given in this paper. The bulk of wafer is punch-through (PT) type with high resistivity and narrow N-base width. The photo-mask was designed upon the turn-off characteristics of GCT and solution of separation between GCT and diode part. The center part of Si wafer is free-wheeling diode (FWD) and outer is GCT part which has 240 fingers totally. The switching performance of GCT was investigated by Dessis of ISE. The basic manufacture process of 2500V-4500V RC-GCTs was given in this work. Additionally, the local carrier lifetime control by 5Mev proton irradiation was adopted so as to not only to have the softness of reverse recovering for FWD but for reduction of turn-off losses of GCT as well.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.351-356
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• 1995

A optical switch which on the LiNbO$_3$substrate is fabricated by using proton exchange method and self-alignet method. The annealing at 400[$^{\circ}C$] was carried out to control waveguide width and depth. A self-aligned method, which doesn\`t need the additional mask precesses, was applied to simplify the fabrication processes and to maximize efficiency of electric field application. The depths of the two annealed optical waveguides, which were measured by using ${\alpha}$-step, ware 1.435[K${\AA}$] and 1,380[K${\AA}$]. Using ${\alpha}$-step facility, we examined that the width of waveguides is increased from 5[$\mu\textrm{m}$] to 6.45[$\mu\textrm{m}$] and 6.3[$\mu\textrm{m}$] due to the annealing effects. The process of proton exchange was done at 400[$^{\circ}C$] for 60[min] and annealing process was done at 400[$^{\circ}C$] for 60[min]. The high speed optical modulator has very good figures of merits: the measured voltage of the input waveguide power is 3.5[V], the voltage of the coupling waveguide power is 3.9[mV], and -29.5[dB] crosstalk and 8[V] switching voltage were achieved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.147-150
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• 2004

Back gate가 있는 $SiO_2$ 기판에 SWCNT(Single Walled Carbon Nanotube) 분산액을 도포하여 SWCNT 네트워크를 형성하였다. 금선을 shadow mask로 사용하여 $10{\mu}m$ 간격의 2단자 금 전극을 열 증착을 통해 형성하였다. 현미경 포토리소그래피를 통하여 시료의 가장자리를 Photoresist로 남겨두어 시료 가장자리의 나노튜브를 통한 단락을 방지하였다. 전류-전압 특성, 게이트 특성과 온도 의존성은 DAQ(Data Aquisition) 보드와 Keithley 2400을 사용하여 측정하였고, Labview 기반 프로그램을 통해 제어하였다. 음의 게이트 전압에서의 저항 감소를 관측함으로써 네트워크 상태에서의 게이트 의존성이 P 형 반도체 성질을 보여줌을 알 수 있었으며, 온도가 올라감에 따라 저항이 지수 함수적으로 증가하는 것으로부터 네트워크의 온도 의존성이 금속성 온도 의존성을 가지는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.339-339
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• 2010

Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.