• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.806-809
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• 2003

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.3
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• pp.529-536
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• 2001

We investigate a surface-micromachined capacitive accelerometer with the grid-type electrodes surrounded by a perforated proof-mass frame. An electromechanical analysis of the microaccelerometer has been performed to obtain analytical formulae for natural frequency and output sensitivity response estimation. A set of prototype devices has been designed and fabricated based on a 4-mask surface-micromachining process. The resonant frequency of 5.8$\pm$0.17kHz and the detection sensitivity of 0.28$\pm$0.03mV/g have been measured from the fabricated devices. The parasitic capacitance of the detection circuit with a charge amplifier has been measured as 3.34$\pm$1.16pF. From the uncertainty analysis, we find that the major uncertainty in the natural frequency of the accelerometer comes from the micromachining error in the beam width patterning process. The major source of the sensitivity uncertainty includes uncertainty of the parasitic capacitance, the inter-electrode gap and the resonant frequency, contributing to the overall sensitivity uncertainty in the portions of 75%, 14% and 11%, respectively.

• International Journal of Precision Engineering and Manufacturing
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• v.9 no.1
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• pp.25-29
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• 2008

We introduce a new fabrication process for antireflective structured surfaces. A 4-inch silicon wafer was dipped in a suspension of 300-nm-diameter silica particles dispersed in a toluene solution. When the wafer was drawn out of the suspension, a hexagonally packed monolayer structure of particles self-assembled on almost the complete wafer surface. Due to the simple process, this could be applied to micro- and nano-patterning. The self-assembled silica particles worked as a mask for the subsequent reactive ion etching. An array of nanometer-sized pits could be fabricated since the regions that correspond to the small gaps between particles were selectively etched off. As etching progressed, the pits became deeper and combined with neighboring pits due to side-etching to produce an array of cone-like structures. We investigated the effect of etching conditions on antireflection properties, and the optimum shape was a nano-cone with height and spacing of 500 nm and 300 nm, respectively. This nano-structured surface was prepared on a $30\;{\times}\;10-mm$ area. The reflectivity of the surface was reduced 97% for wavelengths in the range 400-700 nm.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.2
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• pp.41-48
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• 2014

Direct writing(DW) is a method of patterning materials to a substrate directly, without a mask. It can use a variety of materials and be applied to various fields. Among DW systems, the flow-based type, using a syringe pump and nozzle, is simpler than other types. Furthermore, the range of materials is exceptionally wide. In additive processes, a three dimensional structure is made of stacking layer. Each layer is made of several lines. In this regard, good surface roughness of fabricated layers is essential to three dimensional fabrication. The surface roughness of any fabricated layer tends to change with the dispensing pattern. When multiple layers fabricated by a nozzle dispensing system are stacked, control of the nozzle position from the substrate is important in order to avoid interference between the nozzle and the fabricated layer. In this study, a fluid direct writing system for three dimensional structure fabrication was developed. Experimentsto control the position of the nozzle from substrate were conducted in order to examine the characteristics of the material used in this system.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.374-380
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• 2005

Vibration sensors have a wide scope of applications in the field of monitoring systems that needs to perceive an undesirable physical vibration before a critical failure occurs in a system, and then costly unplanned repairs can be avoided. The conventional vibration sensors developed so far have many disadvantages, such as complex manufacturing process, bulkiness, high cost, less reliability and so on. This paper reports a simple-structured vibration sensor, which has been developed using a commercialized conductive ball and silicon bulk-micromachining technology. The sensor consists of a conductive ball placed in $600{\mu}m$-deep micromachined silicon groove, in which Au thin film has been patterned using a shadow mask technique. Prior to the formation of the Au thin film, the sharp convex corner was rounded for smooth meatl deposition on the non-planar surface at the edge of the groove. The measurement results of the fabricated vibration sensor demonstrate a stable response characteristic to low-frequency vibration range ($1{\sim}30{\;}Hz$).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.64.2-64.2
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• 2012

전자산업에서 소자를 제작하는 핵심공정으로써, 패턴을 형성하는 방식은 식각 마스크를 통해 이루어진다. 공정 순서는 원하는 물질을 증착한 후 사진공정 (photolithograpy)을 통하여 원하는 패턴의 감광제 식각마스크 (etch mask)를 형성하게 된다. 이후, 습식식각이나 건식식각을 통하여 물질의 불필요한 부분을 제거한 후 최종적으로 감광제 식각마스크를 제거하여 원하는 물질의 패턴을 얻게 된다. 최근에 소개된 잉크젯 프린팅 기술 (inkjet printing technology)은 나노 잉크를 이용하여 사진공정과 식각공정을 이용하지 않고, 직접 나노잉크를 분사하여 패턴을 형성하는 방법으로, 패터닝 공정을 단순화 시킬 수 있을 뿐만 아니라 각종 전자 산업의 환경오염물을 획기적으로 줄일 수 있는 친환경기술이다. 특히, OLED, O-TFT, RF-ID, PCB 분야 등 다양한 전자산업분야의 제조기술로서 응용하고자, 전도성 폴리머나 실버 (silver) 나노파티클 잉크를 이용한 전도성 라인 패터닝 (line patterning)에 관한 연구가 활발히 진행되고 있다. 본 강연에서는 친환경 생산공정기술 측면에서의 잉크젯기술을 분석하고, 기술의 구성요소, 응용분야, 기술 동향에 관해서 소개하고, 또한 현재 한국생산기술연구원에 진행하고 있는 잉크젯 프린팅 기술 기반의 인쇄전자 분야에 관한 내용을 소개한다.

• Journal of Sensor Science and Technology
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• v.30 no.3
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• pp.170-174
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• 2021

As the rising attention to the medical and healthcare issue, Bio-MEMS (Micro electro mechanical systems) platform such as bio sensor, cell culture system, and microfluidics device has been studied extensively. Bio-MEMS platform mostly has high resolution structure made by biocompatible material such as polydimethylsiloxane (PDMS). In addition, three dimension structure has been applied to the bio-MEMS. Lithography can be used to fabricate complex structure by multiple process, however, non-rectangular cross section can be implemented by introducing optical apparatus to lithography technic. X-ray lithography can be used even for sub-micron scale. Here in, we demonstrated lines with round shape cross section using the tilted gold absorber which was deposited on the oblique structure as the X-ray mask. This structure was used as a mold for PDMS. Molded PDMS was applied to the cell culture platform. Moreover, molded PDMS was bonded to flat PDMS to utilize to the sub-micro channel. This work has potential to the large area bio-MEMS.