• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.434-437
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• 2003

Evaluation or the patterning accuracy of e-beam lithography machines requires a high precision inspection system that is capable of measuring the true xy-locations of fiducial marks generated by the e-beam machine under test. Fiducial marks are fabricated on a single photo mask over the entire working area in the form of equally spaced two-dimensional grids. In performing the evaluation, the principles of self-calibration enable to determine the deviations of fiducial marks from their nominal xy-locations precisely, not being affected by the motion errors of the inspection system itself. It is. however, the fact that only repeatable motion errors can be eliminated, while random motion errors encountered in probing the locations of fiducial marks are not removed. Even worse, a random error occurring from the measurement of a single mark propagates and affects in determining locations of other marks, which phenomenon in fact limits the ultimate calibration accuracy of e-beam machines. In this paper, we describe an uncertainty analysis that has been made to investigate how random errors affect the final result of self-calibration of e-beam machines when one uses an optical inspection system equipped with high-resolution microscope objectives and a precision xy-stages. The guide of uncertainty analysis recommended by the International Organization for Standardization is faithfully followed along with necessary sensitivity analysis. The uncertainty analysis reveals that among the dominant components of the patterning accuracy of e-beam lithography, the rotationally symmetrical component is most significantly affected by random errors, whose propagation becomes more severe in a cascading manner as the number of fiducial marks increases

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1806-1809
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• 2008

Study that form micro pattern by direct ink jet printing method is getting attention recently. Direct ink jet printing spout fine droplet including nano metal particle by force or air pressure. There is reason which ink jet printing method is profitable especially in a various micro-patterning technology. It can embody patterns directly without complex process such as mask manufacture or screen-printing for existent lithography. In this study, research of a technology that ejects fine droplet form of Pico liter and forms metal micro pattern was carried with inkjet head of piezoelectricity drive system. Droplet established pattern while ejecting consecutively and move on the surface at the fixed speed. Patterns formed in ink are mixed with organic solvent and polymer that act as binder. So added thermal hardening process after evaporate organic solvent at isothermal after printing. I executed high frequency special quality estimation of CPW transmission line to confirm electrical property of manufactured circuit board. We tried a large area printing to confirm application possibility of an ink jet technology.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2005.05a
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• pp.395-400
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• 2005

Nano-scale fabrication of silicon substrate based on the use of atomic force microscopy (AFM) was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate by a simple scratching process, has been applied instead of conventional silicon cantilever for scanning. A thin damaged layer forms in the substrate at the diamond tip-sample junction along scanning path of the tip. The damaged layer withstands against wet chemical etching in aqueous KOH solution. Diamond tip acts as a patterning tool like mask film for lithography process. Hence these sequential processes, called tribo-nanolithography, TNL, can fabricate 2D or 3D micro structures in nanometer range. This study demonstrates the novel fabrication processes of the micro cantilever and diamond tip as a tool for TNL using micro-patterning, wet chemical etching and CVD. The developed TNL tools show outstanding machinability against single crystal silicon wafer. Hence, they are expected to have a possibility for industrial applications as a micro-to-nano machining tool.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.619-623
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• 2006

Selective vapor deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT), thin films has been carried out on self assembled monolayers patterned oxide substrate. Since the 3,4-ethylenedioxythiophene(EDOT) monomer can be polymerized only in the presence of oxidant such as $FeCl_3$, the PEDOT thin film is selectively deposited on patterned $FeCl_3$, which only adsorbs on the partly removed SAMs region due to the inability of $FeCl_3$ to adsorb on SAMs. Therefore, the partly removed SAMs can act as an adsorption layer for the $FeCl_3$ and also as a glue layer for the deposition of PEDOT, resulting in the significantly increased adhesion of PEDOT to $SiO_2$ substrate. The use of UV lithography and Cr patterned quartz mask provided the formation of SAMs patterns on oxide substrates, which allowed for the selective deposition of conductive PEDOT thin films.$^{oo}The$ new process was successfully developed for the selective deposition of PEDOT thin films on SAMs patterned oxide substrate, providing a new way for the patterning of vapor phase deposition of PEDOT thin films with accurate alignment and addressing the inherent adhesion issues between PEDOT and dielectrics.

• Laser Solutions
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• v.16 no.4
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• pp.1-6
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• 2013

Femtosecond laser patterning of ITO on a touch screen panel with a shaped fs laser beam was investigated. A quasi flat-top beam was formed using a variable mask and a planoconvex lens. The spatial profile of the original Gaussian beam and the shaped beam were monitored by a CCD beam profiler. The laser patterned ITO film was examined using an optical microscope, Scanning Electron Microscope (SEM) with Energy Dispersive X-ray Spectroscopy (EDS), and Atomic Force Microscope (AFM). It turned out that the quality of the ITO pattern fabricated by a shaped beam is superior to that of the pattern without beam shaping in terms of debris generation, height of the craters, and homogeneity of the bottom. Optimum processing window was determined at the laser irradiance exhibiting 100% removal of Sn. The removal rate of In was measured to be 83%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.421-421
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• 2008

Generally, the polymer thick-film resistors for embedded organic or hybrid substrate are patterned by screen printing so that the accuracy of resistor pattern is not good and the tolerance of resistance is too high(${\pm}$20~30%). To reform these demerits, a method using Fodel$^{(R)}$ technology, which is the patterning method using a photosensitive resin to be developable by aqueous alkali-solution as a base polymer for thick-film pastes, was recently incorporated for the patterning of thermosetting thick-film resistor paste. Alkali-solution developable photosensitive resin system has a merit that the precise patterns can be obtained by UV exposure and aqueous development, so the essential point is to get the composition similar to PSR(photo solder resist) used for PCB process. In present research, we made the photopatternable resistor pastes using 8 kinds of epoxy acrylates and a conductive carbonblack (CDX-7055 Ultra), evaluated their developing performance, and then measured the resistance after final curing. To become developable by alkali-solution, epoxy acrylate oligomers with carboxyl group were prepared. Test coupons were fabricated by patterning copper foil on FR-4 CCL board, plating Ni/Au on the patterned copper electrode, applying the resistor paste on the board, exposing the applied paste to UV through Cr mask with resistor patterns, developing the exposed paste with aqueous alkali-solution (1wt% $Na_2CO_3$), drying the patterned paste at $80^{\circ}C$ oven, and then curing it at $200^{\circ}C$ during 1 hour. As a result, some test compositions couldn't be developed according to the kind of oligomer and, in the developed compositions, the measured resistance showed different results depending on the paste compositions though they had the same amount of carbonblack.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.436-437
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• 2012

Double patterning technology (DPT) has been suggested as a promising candidates of the next generation lithography technology in FLASH and DRAM manufacturing in sub-40nm technology node. DPT enables to overcome the physical limitation of optical lithography, and it is expected to be continued as long as e-beam lithography takes place in manufacturing. Several different processes for DPT are currently available in practice, and they are litho-litho-etch (LLE), litho-etch-litho-etch (LELE), litho-freeze-litho-etch (LFLE), and self-aligned double patterning (SADP) [1]. The self-aligned approach is regarded as more suitable for mass production, but it requires precise control of sidewall space etch profile for the exact definition of hard mask layer. In this paper, we propose etch end point detection (EPD) in spacer etching to precisely control sidewall profile in SADP. Conventional etch EPD notify the end point after or on-set of a layer being etched is removed, but the EPD in spacer etch should land-off exactly after surface removal while the spacer is still remained. Precise control of real-time in-situ EPD may help to control the size of spacer to realize desired pattern geometry. To demonstrate the capability of spacer-etch EPD, we fabricated metal line structure on silicon dioxide layer and spacer deposition layer with silicon nitride. While blanket etch of the spacer layer takes place in inductively coupled plasma-reactive ion etching (ICP-RIE), in-situ monitoring of plasma chemistry is performed using optical emission spectroscopy (OES), and the acquired data is stored in a local computer. Through offline analysis of the acquired OES data with respect to etch gas and by-product chemistry, a representative EPD time traces signal is derived. We found that the SE-EPD is useful for precise control of spacer etching in DPT, and we are continuously developing real-time SE-EPD methodology employing cumulative sum (CUSUM) control chart [2].

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.797-798
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• 2005

We report a novel structure for a full-color AMOLED (Active Matrix Organic Light Emitting Diode) eliminating the patterning process of a blue emitting layer. The patterning of the three primary colors, RGB, is a key technology in the OLED fabrication process. Conventional full color AMOLED containing RGB layers includes the three opportunities of the defects to make an accurate position and fine resolution using various technologies such as fine metal mask, ink-jet printing and laser-induced transfer system. We can skip the blue patterning step by simply stacking the blue layer as a common layer to the whole active area after pixelizing two primary colors, RG, in the conventional small molecular OLED structure. The red and green pixel showed equivalent performances without any contribution of the blue emission.

• Journal of Information Display
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• v.4 no.3
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• pp.1-5
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• 2003

Laser-Induced Thermal Imaging (LITI) is a laser addressed patterning process and has unique advantages such as high-resolution patterning with over all position accuracy of the imaged stripes of within 2.5 micrometer and scalability to large-size mother glass. This accuracy is accomplished by real-time error correction and a high-resolution stage control system that includes laser interferometers. Here the new concept of hybrid system that complement the merits of small molecule and polymer to be used as an OLED; our system can realize easy processing of light emitting polymers and high luminance efficiency of small molecules. LITI process enables the stripes to be patlerned with excellent thickness uniformity and multi-stacking of various functional layers without having to use any type of fine metal shadow mask. In this study, we report a full-color hybrid OLED using the multi-layered structure consisting of small molecules and polymers.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.