• 제목/요약/키워드: Maritime University

검색결과 9,143건 처리시간 0.034초

Characterization of GaN on GaN LED by HVPE method

  • Jung, Se-Gyo;Jeon, Hunsoo;Lee, Gang Seok;Bae, Seon Min;Kim, Kyoung Hwa;Yi, Sam Nyung;Yang, Min;Ahn, Hyung Soo;Yu, Young Moon;Kim, Suck-Whan;Cheon, Seong Hak;Ha, Hong Ju;Sawaki, Nobuhiko
    • Journal of Ceramic Processing Research
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    • 제13권spc1호
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    • pp.128-131
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    • 2012

  • The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

  • KSCI

Fabrication of AlGaN-based vertical light-emitting diodes

  • Bae, Seon Min;Jeon, Hunsoo;Lee, Gang Seok;Jung, Se-Gyo;Kim, Kyoung Hwa;Yi, Sam Nyung;Yang, Min;Ahn, Hyung Soo;Yu, Young Moon;Kim, Suck-Whan;Cheon, Seong Hak;Ha, Hong-Ju;Sawaki, Nobuhiko
    • Journal of Ceramic Processing Research
    • /
    • 제13권spc1호
    • /
    • pp.75-77
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    • 2012

  • The AlGaN-based vertical light-emitting diodes (LEDs) on thick GaN epilayer were fabricated by a hydride vapor phase epitaxy with multi sliding boat system. The optical and electrical characteristics of AlGaN-based vertical LEDs were evaluated using a scanning electron microscopy, electroluminescence and I-V measurements. The AlGaN-based vertical LEDs structure has hexagonal symmetry, 500 ㎛ in diameter and above 67 ㎛ in growth thickness. At the room-temperature, the broaded strong peak and relatively high intensity peak were gradually measured at 405 nm with increasing injection current. And a forward operator voltage was measured to be about 7.5 V.

  • KSCI