• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.8C
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• pp.1113-1124
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• 2004

In this paper, we proposed a hardware(H/W) structure which can compress and recontruct the input image in real time operation and implemented it into a FPGA platform using VHDL(VHSIC Hardware Description Language). All the image processing element to process both compression and reconstruction in a FPGA were considered each of them was mapped into H/W with the efficient structure for FPGA. We used the DWT(discrete wavelet transform) which transforms the data from spatial domain to the frequency domain, because use considered the motion JPEG2000 as the application. The implemented H/W is separated to both the data path part and the control part. The data path part consisted of the image processing blocks and the data processing blocks. The image processing blocks consisted of the DWT Kernel fur the filtering by DWT, Quantizer/Huffman Encoder, Inverse Adder/Buffer for adding the low frequency coefficient to the high frequency one in the inverse DWT operation, and Huffman Decoder. Also there existed the interface blocks for communicating with the external application environments and the timing blocks for buffering between the internal blocks The global operations of the designed H/W are the image compression and the reconstruction, and it is operated by the unit of a field synchronized with the A/D converter. The implemented H/W used the 69%(16980) LAB(Logic Array Block) and 9%(28352) ESB(Embedded System Block) in the APEX20KC EP20K600CB652-7 FPGA chip of ALTERA, and stably operated in the 70MHz clock frequency. So we verified the real time operation of 60 fields/sec(30 frames/sec).

• Journal of KIISE:Computer Systems and Theory
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• v.32 no.11_12
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• pp.663-674
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• 2005

We propose a system aimed at achieving high energy-delay efficiency by using adaptive victim caches. Particularly, we investigate methods to improve the hit rates in the first level of memory hierarchy, which reduces the number of accesses to mort power consuming memory structures such as L2 cache. Victim cache is a memory element for reducing conflict misses in a direct-mapped L1 cache. We present two techniques to fill the victim cache with the blocks that have higher probability to be re-reqeusted by processor. Hit-based victim cache ks tilled with the blocks which were referenced frequently by processor. Replacement-based victim cache is filled with the blocks which were evicted from the sets where block replacements had happened frequently According to our simulations, replacement-based victim cache scheme outperforms the conventional victim cache scheme about $2\%$ on average and refutes the power consumption by up to $8\%$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.12
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• pp.5477-5485
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• 2011

This study comparatively analyzed the instrumentation and the voicing structure, which were shown in the film music titled "Star Wars-Main Title" by John Williams(1932~), with analytical technique that the writer mapped out, and aimed to discover the progression principle in orchestration based on the results. Also, it applied a functional part-division method that was classified and distributed into 3 functional parts according to auditory cognitive level as for each of functional elements such as the musical element. And, it made it pattern for the vertical structure and the voicing structure in musical instruments, which were distributed to each functional part based on this, and comparatively analyzed the standard point in a change which were shown according to progression of music, namely, the operating technique. As for the results of this study, first, each theme has specific instrumentation pattern. Unity was emphasized by consistently organizing those things in exposition, reprise, and recapitulation of each theme. To reinforce diversity, an attempt was made such as adding and reducing auxiliary instruments in the middle part and the rear part. Second, even in a change of instrumentation pattern by passage in accordance with a change in theme amid each part, the same instrumental group was organized in the middle part, thereby having maintained unity. Third, to strengthen diversity by clause, which is forming each theme, a continuous change in voicing pattern was created by adding or omitting a part. Fourth, the voicing concentration was maintained the structure of "thinness-thickness" in the whole musical piece. However, in part 2 that is repeated theme 3, diversity was pursued with a unique change of "thickness-thickness." Fifth, in part 4 that is indicated theme 4, the other diversity was intensified with the inverted range in the front part and the middle part. Accordingly, based on the conclusions that were indicated in this work, it is desired to be conducive to understanding the horizontal consideration and the progression principle of orchestration.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• Proceedings of the Plant Resources Society of Korea Conference
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• 2022.09a
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• pp.36-36
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• 2022

The molecular understanding of resistance and susceptibility of host plants to scab, a most threatful disease to pome fruit production worldwide, is very limited. Comparing resistant line '93-3-98' to susceptible one 'Sweet Skin' at seven time points of 0, 0.5, 1, 2, 3, 4, 8 days post inoculation, RNA-sequencing data derived from infected and mock-inoculated young leaves were analyzed to evaluate the tolerant response and to mine candidate genes of pear to the scab pathogen Venturia nashicola. Analysis of the mapped reads showed that the infection of V. nashicola led to significant differential expression of 17,827 transcripts with more than 3-fold change in the seven pairs of libraries, of which 9,672 (54%) are up- and 8,155(46%) are down-regulated. These included mainly receptor (NB-ARC domains-containing, CC-NBS-LRR, TIR-NBS-LRR, seven transmembrane MLO family protein) and transcription factor (ethylene responsive element binding, WRKY DNA-binding protein) related gene. An arsenal of defense response of highly resistant pear accessions derived from European pear was probably supposed no sooner had V. nashicola infected its host than host genes related to disease suppression like Polyketide cyclase/dehydrase and lipid transport protein, WRKY family transcription factor, lectin protein kinase, cystein-rich RLK, calcium-dependent phospholipid-binding copine protein were greatly boosted and eradicated cascade reaction induced by pathogen within 24 hours. To identify transcripts specifically expressed in response to V. nashicola, RT-PCRs were conducted and compare to the expression patterns of seven cultivars with a range of highly resistant to highly susceptible symptom. A DEG belonging to the PR protein family genes that were higher expressed in response to V. nashicola suggesting extraordinary role in the resistance response were led to the identification. This study provides the first transcriptional profile by RNA-seq of the host plant during scab disease and insights into the response of tolerant pear plants to V. nashicola.

• Korean Journal of Microbiology
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• v.41 no.1
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• pp.67-73
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• 2005

Photoautotrophic bacteria are promising candidates for the production of poly(3-hydroxybutyrate) (PHB) since they can address the critical problem of substrate costs. In this study, we isolated 25 Tn5-inserted mutants of the Synechocystis sp. PCC 6803 which showed enhanced PHB accumulation compared to the wild-type strain. After 5-days cultivation under nitrogen-limited mixotrophic conditions, the intracellular levels of PHB content in these mutants reached up to $10-30\%$ of dry cell weight (DCW) comparable to $4\%$ of DCW in the wild-type strain. Using the method of inverse PCR, the affected genes of the mutants were mapped on the completely known genome sequence of Synechocystis sp. PCC 6803. As a result, the increased PHB accumulation in 5 mutants were found to be resulted from defects of genes coding for NADH-ubiquinone oxidoreductase, O-succinylbenzoic-CoA ligase, photosystem II PsbT protein or histidine kinase, which are involved in photosystem in thylakoid inner membrane of the cell. The values of $NAD(P)H/NAD(P)^+$ ratio in the cells of these mutants were much higher than that of the wild-type strain as measured by using pulse-amplitude modulated fluorometer, suggesting that PHB synthesis could be enhanced by increasing the level of cellular NAD(P)H which is a limiting substrate for NADPH-dependent acetoacetyl-CoA reductase. From these results, it is likely that NAD(P)H would be a limiting factor for PHB synthesis in Synechocystis sp. PCC 6803.