• Title/Summary/Keyword: Magneto-resistance

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Properties of magneto-resistance by annealing using by co-sputtering method (Co-sputtering 법으로 제조한 Insb 박막의 후열처리기술에 의한 자기저항 특성)

  • Kim, Tae-Hyong;So, Byung-Moon;Song, Min-Jong;Baek, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.370-374
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    • 2002
  • Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

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Properties of Magneto-resistance by annealing using by co-sputtering method (co-sputtering법으로 제조한 Insb박막의 후열처리기술에 의한 자기저항 특성)

  • Kim, Tae-Hyong;So, Byung-Moon;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.128-132
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    • 2002
  • Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

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Magneto-resistances of the coated conductors fabricated on the tilted single crystalline Ni substrates and RABiTS

  • Yoo, J.;Kim, H.;Jung, K.;Oh, S.;Youm, D.
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.132-135
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    • 2000
  • Magneto-resistances of the YBa$_2$Cu$_3$O$_{7-{\delta}}$ based coated conductors fabricated on the tilted single crystalline Ni substrates and RABiTS (rolling assisted bi-axially textured substrate) were measured under various magnetic fields. The activation energies of vortices were estimated from them by fitting equation of p = p$_o$ exp(-U(H,T)/k$_B$T). When currents flew in the rolling direction for the case of the tilted single crystalline YBCO on the RATS, the activation energies were similar to those of c-axis normal YBCO films on the SrTiO$_3$ single crystal substrates [5] and were slightly larger than those of the RABiTS coated conductors. On the contrary, for the currents flowing in the transverse direction, the magnetoresistances show double transitions in the temperature with much smaller activation energies.

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Physical correlation between annealing process and crystal structure and magneto-resistance of Bismuth thin films (열처리 공정과 비스무스 박막의 결정구조 및 자기저항 특성변화와의 물리적 관계)

  • Jang, Seok Woo;Seo, Young-Ho;An, Ho-Myoung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.3
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    • pp.638-642
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    • 2014
  • In this study, we investigate on the crystal microstructure and magneto-resistance (MR) change of Bismuth(Bi) thin films for annealing process, in order to apply Bi thin films to the spin electronic devices. As-prepared Bi thin films show the randomly oriented find grains whose size was measured to about 100 nm and the very low MR (4.7 % at room temperature) while careful annealing results in not only grain growth up to ${\sim}2{\mu}m$ but also drastic MR improvement (404 % at room temperature). The drastic change in the MR after applying the annealing process is attributed to the grain growth decreasing grain boundary scattering of electron. Therefore, in this study, we confirm the annealing effect for the grain boundary formation and MR improvement of Bi thin films, and demonstrate the feasibility of spin electronic devices.

A Study on the Fatigue Property of Magneto-Rheological Elastomers

  • Kim, Tae Woo;Choi, You Jin;Kim, Nam Yoon;Chung, Kyung Ho
    • Elastomers and Composites
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    • v.53 no.3
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    • pp.150-157
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    • 2018
  • Fatigue properties of rubber are one of the most important characteristics in the rubber industry. In this study, the fatigue properties of MREs (magneto-rheological elastomers) based on NR (natural rubber), EPDM (ethylene-propylene diene monomer), and AEM (ethylene/acrylic elastomer) were investigated. For comparison, MREs with a Shore hardness of 60A were prepared. According to the relative results, the fatigue properties of EPDM MRE were the worst. Thus, we investigated methods to improve the fatigue properties of EPDM MRE by varying the carbon black content and curing systems of EPDM as the matrix of the MRE. Dynamic properties were measured using a fatigue tester and an RPA (rubber process analyzer), and the XPS (X-ray photoelectron spectroscopy) was used to analyze the curing system of the EPDM matrix. According to the results, the Payne effect increased and the fatigue resistance decreased as the carbon black content increased. In case of the curing system, the CV (conventional vulcanization) system was superior to the EV (efficient vulcanization) system in terms of the fatigue resistance. This was because the number of flexible bonds in the case of the CV system was higher than that in the case of the EV system. However, the EV system showed excellent mechanical properties because it had many monosulfidic bonds with strong binding energy.