• Journal of Magnetics
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• v.8 no.2
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• pp.98-102
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• 2003

Microstructure and magnetic transport phenomina in rf sputtered AIN/CO type ten- layered discontinuous films of nanoscaled [AIN(3 nm)/Co(t nm)]…$_10$ with t$_Co$=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer, Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AIN matrix, and the films showed the superparamagnetic behavior with a high MR value of ${\Delta}p/p_0$=1.8%. As t$_Co$ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. funneling barrier called “decay length far tunneling” fur the films haying the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$^{-1}$.

• Journal of Magnetics
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• v.8 no.1
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• pp.24-31
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• 2003

The discoveries of antiferromagnetic coupling in Fe/Cr multilayers by Grunberg, the Giant Magneto Resistance by Fert and Grunberg and a large tunneling magnetoresistance at room temperature by Moodera have triggered enormous research on magnetic thin films and magnetoelectronic devices. Large opportunities are especially opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on an external magnetic field can be found. We will briefly address important basic properties of these junctions like thermal, magnetic and dielectric stability and discuss scaling issues down to junction sizes below 0.01 $\mu\textrm{m}$$^2$with respect to single domain behavior, switching properties and edge coupling effects. The second part will give an overview on applications beyond the use of the tunneling elements as storage cells in MRAMs. This concerns mainly field programmable logic circuits, where we demonstrate the clocked operation of a programmed AND gate. The second 'unconventional' feature is the use as sensing elements in DNA or protein biochips, where molecules marked magnetically with commercial beads can be detected via the dipole stray field in a highly sensitive and relatively simple way.

• Journal of Magnetics
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• v.6 no.4
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• pp.132-141
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• 2001

The switching characteristics and the magnetization-flop behavior in magnetic tunnel junctions exchange biased by synthetic antiferromagnets (SyAFs) are investigated by using a computer simulations based on a single-domain multilayer model. The bias field acting on the free layer is found to be sensitive to the thickness of neighboring layers, and the thickness dependence of the bias field is greater at smaller cell dimensions due to larger magnetostatic interactions. The resistance to magnetization flop increases with decreasing cell size due to increased shape anisotropy. When the cell dimensions are small and the synthetic antiferromagnet is weakly, or not pinned, the magnetization directions of the two layers sandwiching the insulating layer are aligned antiparallel due to a strong magnetostatic interaction, resulting in an abnormal magneto resistance (MR) change from the high-MR state to zero, irrespective of the direction of the free-layer switching. The threshold field for magnetization-flop is found to increase linearly with increasing antiferromagnetic exchange coupling in the synthetic antiferromagnet. Irrespective of the magnetic parameters and cell sizes, magnetization flop does not exist near zero applied field, indicating that magnetization flop is driven by the Zeeman energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.444-444
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• 2011

Recently, patterned magnetic films and elements attract a wide interest due to their technological potentials in ultrahigh-density magnetic recording and spintronic devices. Among those patterned magnetic structures, magnetic anti-dot patterning induces a strong shape anisotropy in the film, which can control the magnetic properties such as coercivity, permeability, magnetization reversal process, and magneto-resistance. While majority of the previous works have been concentrated on anti-dot arrays with a single magnetic layer, there has been little work on multilayered anti-dot arrays. In this work, we report on study of the magnetic properties of bilayered anti-dot system consisting of upper perforated Co layer of 40 nm and lower continuous Ni layer of 5 nm thick, fabricated by photolithography and wet-etching processes. The magnetic hysteresis (M-H) loops were measured with a superconducting-quantum-interference-device (SQUID) magnetometer (Quantum Design: MPMS). For comparison, investigations on continuous Co thin film and single-layer Co anti-dot arrays were also performed. The magnetic-domain configuration has been measured by using a magnetic force microscope (PSIA: XE-100) equipped with magnetic tips (Nanosensors). An external electromagnet was employed while obtaining the MFM images. The MFM images revealed well-defined periodic domain networks which arise owing to the anisotropies such as magnetic uniaxial anisotropy, configurational anisotropy, etc. The inclusion of holes in a uniform magnetic film and the insertion of a uniform thin Ni layer, drastically affected the coercivity as compared with single Co anti-dot array, without severely affecting the saturation magnetization ($M_s$). The observed changes in the magnetic properties are closely related to the patterning that hinders the domain-wall motion as well as to the magneto-anisotropic bilayer structure.

• Journal of Magnetics
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• v.21 no.3
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• pp.405-412
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• 2016

In general, surface mounted PM synchronous motors (SPMSMs) are mainly adopted as a driving motor for high-speed applications, because they have high efficiency and high power density. However, the SPMSMs have some weak points such as the increase of magnetic reluctance and additional losses as a consequence of using a non-magnetic sleeve. Especially, the magneto-motive force (MMF) in the air-gap of the SPMSMs is weakened due to the magnetically increased resistance. For that reason, a large amount of PM is consumed to meet the required MMF. Nevertheless, it cannot help using the sleeve in order to maintain the mechanical integrity of a rotor assembly in high-speed rotation. Thus, in this paper, a multi-layer interior PM synchronous motor (IPMSM) not using the sleeve is presented and designed as an alternative of a SPMSM. Both motors are evaluated by test results based on a variety of characteristics required for an air blower system of a fuel cell electric vehicle.

• Proceedings of the KIPE Conference
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• 2011.07a
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• pp.498-499
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• 2011

In this paper, the fundamental features of the arc stability DC arc furnace have been investigated, from the converter point of view. To compare of measurement arc data from DC arc furnace and the advanced arc simulations of magneto-hydrodynamics (MHD) and the well known Cassie-Mayr arc model have been extensively used. The MHD based arc simulation has been validated in the subcomponent level, for the free burning arc set up in the laboratory. The arc simulation predicted the arc voltage for different currents with the accuracy which satisfies engineering requirements. It has been shown that the arc current steepness at current zero determines the arc stability, and the associated peak arc resistance can be used as its quantitative measure. Based on the presented insight into the DC arc stability, a converter topology solution which realizes an optimal arc stability has been proposed. The main results presented in this paper provide a design guideline for the future DC arc furnace converter topology developments.

• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.9-15
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• 1996

In order to display magnetic signals obtained from a magneto-resistance sensor, a direct current magnetometer was designed and its circuit was constructed. The magnetic fields measured by the home-made magnetometer, which showed good functions of automatic ranging, analog output, and vector sensing, were well agreed with those by commercial MAG-01 magnetometer. The measurement range of the magnetometer was $1\;{\mu}T$ to 1.999 mT, the resolution was -132 dB within 1 Hz bandwidth and the measured magnetic fields could be displayed with $3{\cdot}1/2$-digit LED.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.140-143
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• 2011

The growth and characterization of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface $In_{0.5}Ga_{0.5}As$ channels of different thicknesses (30 nm and 60 nm) both with and without a thin 3 nm $In_{0.5}Ga_{0.5}As$ cap layer by using molecular beam epitaxy. We then investigated the in-plane transport properties as well as the Rashba spin-orbit coupling constant of the two-dimensional electron gas confined at the heterojunction interface.

• Journal of Magnetics
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• v.8 no.2
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• pp.85-88
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• 2003

The magnetic and transport properties far single crystals of Ru-doped mono-layered manganites $La_{0.5}Sr_{1.5}-Mn_{1-x}Ru_xO_4$ (0$\leq$$\chi$$\leq$0.1) have been studied using neutron diffraction and magnetization measurements. Temperature dependent magnetization data reveal that with an increase in the Ru concentration the parent charge ordered antiferromagnetic state is gradually destroyed and new ferromagnetic phase evolves. In the low Ru-doped system spin glass behavior is apparent in low temperature region, which is confirmed by ac and do magnetization measurements. The competing magnetic interaction between Mn/Mn and Mn/Ru couples is the most likely cause of the spin glass transition.

• Journal of the Korean Magnetics Society
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• v.5 no.4
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• pp.299-303
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• 1995

In order to improve the read-out signal waveform, a shielded magnetoresistive (SMR) head has been designed and studied by applying the transmission-line model. The bias and signal field distribution, the voltage output, the harmonic output signal and resistance value of MR element are simulated as functions of bias current and recording displacement. The results show that the SMR head has good linear character with respect to the medium recording signal in high recording frequency of about 2.5 MHz. The amplitude and waveform of reroduction signal have been obviously improved. The saturation effect on the symmetry and amplitude of reproducing output have also been analyzed.