• Title/Summary/Keyword: Magneto impedance

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Magneto-impedance effect of CoFeSiBNi amorphous magnetic films (CoFeSiBNi 아몰퍼스 합금의 자기-임피던스 효과)

  • Lee, Seung-Hun;Park, Byung-Kyu;Hwang, Sung-Woo;Moon, Sung
    • Journal of Sensor Science and Technology
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    • v.16 no.5
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    • pp.389-393
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    • 2007
  • Soft ferromagnetic materials are very useful for many sensors using magnetic materials demanding high permeability, low coercivity and low hysteresis loss. Among them, FeCoSiBNi amorphous magnetic films show a good impedance change (about 5.01 %/Oe, at 10 MHz) by the exterinal magnetic field in this experiment. The magnetic films are produced by melt-spun method, one of the rapid solidification process. Ribbon shape wires were made from the films, and let them annealed in DC magnetic field to increase the maximum Giant Magneto Impedance ratio. Field annealing decreases the stress and changes the effective anisotropy. Thus, we can find that the impedance change (200.47 %) is improved and the fabricated magnetic wire has characteristics of good sensor element.

Super-giant Magneto-Impedance Effect of a LC-resonator Using a Glass-Coated Amorphous Microwire

  • Lee, Heebok;Kim, Yong-Seok;Yu, Seong-Cho
    • Journal of Magnetics
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    • v.7 no.4
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    • pp.160-164
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    • 2002
  • A new discovery of the super-giant magneto-impedance (SGMI) effect was found out in a LC-resonator consisted of a glass-coated amorphous $CO_{83.2}B_{3.3}Si_{5.9}Mn_{7.6}$ microwire. The measurement was carried out at high frequency range from 100 MHz up to 1 GHz of an ac-current flowing along the wire and at varying axial dcmagnetic field in its range of $\pm$120 Oe. The wires, about 16${\mu}m$ in diameter, were fabricated by a glass-coated melt spinning technique. The shape of the impedance curves plotted vs. a dc-field is changing dramatically with the frequency. The phase angle was also strongly dependent on this field. The external dc-magnetic field changes the circumferential permeability as well as the penetration depth, both in turn change the impedance of the sample. The drastic increments of SGMI at high frequency can be understood in terms of the LC-resonance phenomena. The sudden change of the phase angle, as large as $180^{\circ}$ evidenced the occurrence of the resonance at a given intensity of the external dc-field. The maximum ratio of SGMI reached in the experiment by precise tuning frequency equals 450,000% at the frequency of around 551.9075 MHz.

Fabrication and Properties of MI Sensor Device using CoZrNb Films (CoZrNb막을 이용한 MI센서 소자의 제작 및 특성)

  • Hur, J.;Kim, Y.H.;Shin, K.H.;Sa-Gong, G.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.52-58
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    • 2004
  • Magneto-Impedance(MI) sensor is a highly sensitive sensor, which was able to detect a weak geomagnetic field. It also has a merit to be able to build in the low power system. In this study, their magnetic permeability and anisotropy field(H$\sub$k/) as a function of some different thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ respectively for 2 hours. Magnetic properties of films are measured by using a M-H loop tracer. Magnetic permeability of a film is measured over the frequency range from 1 ㎒ to 750㎒. By thickening a CoZrNb film relatively, magnetic permeability and impedance are examine to design the. MI sensor which drives at 50㎒, and thereof fabricated the MI sensor which drives at the 50㎒.

Magneto-Impedance Effect of FeCoSiB Amorphous Magnetic Films (FeCoSiB계 아몰퍼스 자성박막의 자기-임피 던스 효과)

  • Shin, Yong-Jin;Soh, Dae-Hwa;Kim, Hyen-Wook;Kim, Dae-Ju;Seo, Kang-Soo
    • Korean Journal of Materials Research
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    • v.8 no.3
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    • pp.252-255
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    • 1998
  • In this paper, we investigate the magneto-impedance(M1) effect of the FeCoSiB amorphous magnktic films. The amorphous magnetic film having near zero magnetostriction is fabricated by using the sputtering method, and then annealed in magnetic field. When the external magnetic field is directly applied to the fabricated film, the voltage amplitude between both side of the magnetic film varies about 76.2% at 120[MHzl and the impedance varies about 2.1%/0e. Thus, we find that the fabricated magnetic film has the characteristics of good sensor element.

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Fabrication and Properties of MI Sensor using CoZrNb films (CoZrNb 막을 이용한 MI센서 제작 및 특성)

  • Hur, J.;Kim, Y.H.;Shin, K.H.;SaGong, G.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.132-135
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    • 2002
  • MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field($H_{k}$) as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C$ respectively for 2 hours. Magnetic properties of film are measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range 1 MHz to 750MHz. And, it was examined on the permeability and impedance to design the MI sensor which acts at 50MHz by thickening a CoZrNb film relatively, and fabricated the MI sensor which acts at the 50MHz.

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Magnetic Field Sensors using Co-base Amorphous Ribbon (Co계 아몰퍼스리본을 이용한 자계센서)

  • Shin, Kwang-Ho;Park, Kyung-Il;Song, Jae-Yeon;Kim, Young-Hak;SaGong, Geon
    • Journal of Sensor Science and Technology
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    • v.12 no.5
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    • pp.205-210
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    • 2003
  • To develop the highly sensitive Magneto-Impedance sensor, the amorphous ribbon was micro-processed to meander type sensor pattern, and its external magnetic field dependence of impedance was investigated. The impedance of the pattern had peak value at the magnetic field of 13 Oe and its changing ratio was about 170%. The impedance change per unit magnetic field was about 36% at bias field of 6 Oe, in which the output with high sensitivity and linearity could be obtained. The magnetic field resolution of the sensor module, which consist of the amorphous pattern and driving circuit, was about $10^{-3}$ Oe.