• Korean Journal of Materials Research
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• v.13 no.4
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• pp.233-238
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• 2003

Ferromagnetic tunnel junctions, Ta/Cu/Ta/NiFe/Cu/$Mn_{75}$ $Ir_{25}$ $Co_{70}$ $Fe_{30}$/Al-oxide, were fabricated by do magnetron sputtering and plasma oxidation process. The effect of annealing temperature on the local transport properties of the ferromagnetic tunnel junctions was studied using contact-mode Atomic Force Microscopy (AFM). The current images reflected the distribution of the barrier height determined by local I-V analysis. The contrast of the current image became more homogeneous and smooth after annealing at $280^{\circ}C$. And the average barrier height $\phi_{ave}$ increased and its standard deviation $\sigma_{\phi}$ X decreased. For the cases of the annealing temperature more than $300^{\circ}C$, the contrast of the current image became large again. And the average barrier height $\phi_{ave}$ decreased and its standard deviation $\sigma_{\phi}$ increased. Also, the current histogram had a long tail in the high current region and became asymmetric. This result means the generation of the leakage current that is resulted from the local generation of a low barrier height region. In order to obtain the high tunnel magnetoresistance(TMR) ratio, the increase of the average barrier height and the decrease of the barrier height fluctuation must be strictly controlled.led.

• Journal of the Korean Magnetics Society
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• v.9 no.3
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• pp.166-172
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• 1999

The magnetic properties between Mn-Ir antiferromagnetic layer and Ni-Fe ferromagnetic layer have been investigated in Mn-Ir/Ni-Fe/Zr on Si wafer formed by magnetron sputtering. Mn-Ir was sputtered from Ir chips and Mn target using D.C. power, Ni-Fe and Zr were deposited from Ni-Fe and Zr targets using D.C. power under Ar atmosphere. We studied the dependence of the magnetic properties on Ir content of Mn-Ir layer for Mn-Ir/Ni-Fe bilayer, and obtained the highest $H_ex$ of 219 Oe and the low $H_c$ of 30 Oe. And then focused on the effect of base pressure for Mn-Ir containing multilayers. Our experimental data showed that if the base pressure is higher than $3.0{\times}10^{-6}\;Torr$, the exchange anisotropy of Mn-Ir/Ni-Fe/Zr disappeared probably due to the grain refining of Mn-Ir film. In addition we have studied the dependence of Zr buffer on magnetic properties of Mn-Ir/Ni-Fe/Zr multilayers, and observed that Zr buffer about (111) texture and lower $H_c$ of Mn-Ir/Ni-Fe/Zr multilayer.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.300-307
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• 1998

The $Co_{90}Fe_{10}$ single layer films were deposited on various substrates (glass, Si, polymide) using high vacuum RF magnetron sputtering system and nominall 1000 $\AA$ thick $Co_{90}Fe_{10}$ alloy films had a good high frequency characteristic. $M_S$ and $H_{an}$ values obtained from the B-H characteristic of the $10{\times}[100 nm \;Co_{90}Fe_{10}/100 nm\; SiO_2]$ multilayers agreed well with those obtained by calculation. Complex relative permeability $(={\{\mu}_r={\mu}_r',-j{\mu}$\mu$_r")$ at frequency f was measured from the transmission characteristics $(S_{11},\; S_{21}\;parameters)$ of the microstrip line which has a stacked structure consisting of sample magnetic films and a conductor and is connected to a network analyzer. The ${\mu}_r'-f$ characteristic was abtained from the megnetic absorption, which was analyzed from the S-parameter characteristics of the microstrip line. The ${\mu}_r'-f$ characteristic was also calculated from the ${\mu}_r"-f$-f characteristic using the Kramers-Kronig relation. The measurement results were confirmed to agree well with those obtained by calculations.culations.

• Journal of the Korean Magnetics Society
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• v.24 no.4
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• pp.101-106
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• 2014

The glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(2.3 nm)/NiFe(3 nm)/IrMn(12 nm)/Ta(5.8 nm) GMR-SV (giantmagneto-resistance-spin valve) multilayer structure films with a magnetoresistance ratio (MR) of 5.0 % and a magnetic sensitivity (MS) of 1.5%/Oe was deposited by dc magnetron sputtering method. Also, GMR-SV device having a width of $7{\mu}m{\sim}8{\mu}m$ similar to the diameter of RBC (red blood cell) was fabricated by the light lithography process. When RBCs coupled with several magnetic beads with a diameter of $1{\mu}m$ dropped upon the GMR-SV device having MR = 1.06% and MS = 0.3 %/Oe, there is observed the variation of about included of a resistance value of ${\Delta}R=0.4{\Omega}$ and ${\Delta}MR=0.15%$ around a external magnetic field of -0.6 Oe. From these results, the GMR-SV device having the width magnitude of a few micron size can be applied as the biosensor for the analysis of a new magnetic property of hemoglobin inside of RBC combined to magnetic beads.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.156-161
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• 2007

To develop array magnetic sensors, specular-type giant magnetoresistive- spin valve (GMR-SV) film of Glass/Ta(5)MiFe(7)/IrMn(10)NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) was deposited by using a high-vacuum sputtering system. One of 15 way sensors in the area of $8{\times}8mm^2$ was Patterned a size of $20{\times}80{\mu}m^2$ in multilayer sample by Photo-lithography. All of 15 sensors with Cu electrodes were measured a uniform magnetic properties by 2-probe method. The highest magnetic sensitivity of MR and output voltage measured nearby an external magnetic field of 5 Oe were MS = 0.5%/Oe and ${\triangle}$V= 3.0 mV, respectively. An easy-axis of top-free layers of $CoFe/O_2/NiFe$ with shape anisotropy was perpendicular to one of bottom-pinned layers $IrMn/NiFe/O_2/CoFe$. When the sensing current increased from 1 mA to 10 mA, the output working voltage uniformly increased and the magnetic sensitivity was almost stable to use the nano-magnetic devices with good sensitive properties.

• Journal of the Korean institute of surface engineering
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• v.34 no.6
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• pp.531-536
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• 2001

Co-22 %Cr alloy films are promising for high-density perpendicular magnetic recording media with their perpendicular anisotropy and large coercivity of 3000 Oe. We observed that a self organized nano structure (SONS) of fine ferromagnetic Co-enriched phase and paramagnetic Cr-enriched phase appears inside the grain of Co-Cr magnetic alloy thin films at the elevated substrate temperature after do-sputtering. The periodic fine Co-enriched phase and Cr-enriched phase is the plate shape of 80 (equation omitted)-wide and 1000 (equation omitted)-long. Cr-enriched phases are located at the center of grains. We prepared 5000 (equation omitted) -thick Co-22 %Cr films on polyimide substrate with varying substrate temperature of $ 30^{\circ}C$, $ 150^{\circ}C$ ,200 $^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. A transmission electron microscope equipped with energy dispersive X-ray analyzer is employed to observe the microstructure of each samples after Co-enri-ched phase are etched selectively. The self organized nano structure of Co-enriched and Cr-enriched lamellar is observed above the substrate temperture of $150^{\circ}C$. No compositional change is observed with substrate temperature. The compositional phase separation in self organized structure becomes clear as the substrate temperature increases. Our results implies that the self organized nano structure in Co-22 %Cr film is ideal for ultra high density recording media by recording selectively on Co-enri-ohed phase.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1617-1620
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• 2007

This paper presents a magnetostrictive transpositioner and its fabrication process. To get a transposition movement without shifting or twisting, it is designed as an array type. To fabricate the suggested design, micromachining and selective DC magnetron sputtering processes are combined. TbDyFe film is sputter-deposited on the back side of the bulk micromachined transpositioner, with the condition as: Ar gas pressure below $1.2{\times}10^{-9}$ torr, DC input power of 180W and heating temperature of up to $250^{\circ}C$ for the wireless control of each array component. After the sputter process, magnetization and magnetostriction of each sample are measured. X-ray diffraction studies are also carried out to determine the film structure and thickness of the sputtered film. For the operation, each component of the actuator has same length and out-of-plane motion. Each component is actuated by externally applied magnetic fields up to 0.5T and motion of the device made upward movement. As a result, deflections of the device due to the movement for the external magnetic fields are observed.

• Journal of Magnetics
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• v.13 no.2
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• pp.43-52
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• 2008

The objective of this paper is to review the magnetic and magneto-transport properties of Co/$Co_2TiSn$ consisting of two metallic magnetic phases that are antiferromagnetically exchange-coupled at the phase boundary. The bulk Co/$Co_2TiSn$ system, which has a $Co_2$TiSn Heusler alloy precipitates in the hexagonal Co matrix, showed an unusual coercivity change with a concurrent change in temperature, and was modeled on the basis of a wall formation caused by exchange coupling at the phase boundary. For measurements of magneto-transport properties, Co/$Co_2TiSn$ thin films that had two-magnet phases were deposited using a magnetron sputtering system with a composite target. The magnetization process in the films is also explained on the basis of the model of wall formation at the phase boundary. Annealed Co/$Co_2TiSn$ films showed a 0.12% GMR effect, indicating the scattering of polarized conduction electrons due to the antiparallel exchange coupling at the phase boundary. The scattering process of conduction electrons at the phase boundary was modeled with relation to the magnetization process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.13-16
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• 2000

In this study, we have fabricated nonequilibrium $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film, which contains an additional insoluble element Ag, by using DC magnetron sputtering method. We have investigated the magnetic properties of amorphous $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film as a function of rotational field annealing(RFA). After deposition, the amorphous $Fe_{85.6}Zr_{3.3}B_{5.7}Ag_{5.4}$ thin film annealed by rotational field annealing method at $350^{\circ}C$ for an hour was founded to have high permeability of 8680 of 100 MHz, 0.2 mOe, low coercivity of 0.86 De and very low core loss of 1.3 W/cc at 1 MHz, 0.1T.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.103-108
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• 2003

A micromagnetic model and a Stoner-Wohlfarth model are used to analyze the effect of demagnetization field in patterned permalloy films. Permalloy films of 20 $\mu\textrm{m}$${\times}$(40 $\mu\textrm{m}$∼200 $\mu\textrm{m}$) are fabricated by DC magnetron sputtering and photo lithography. Measured magnetoresistance data of patterned permalloy films are compared with simulation results. The micromagnetic model gives a better agreement with the measured MR data than the Stoner-Wohlfarth model. Based on the simulation results, we propose a revised approximation formula for dernagnetization field in Stoner- Wohlfarth model for a few fm patterned magnetic films.