• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.6-6
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• 2010

Indium Tin Oxide (ITO)를 포함한 Transparent Conduction Oxide (TCO)는 LCD, OLED와 같은 Display, 그리고 Solar Cell 등 광신호와 전기신호간 변환이 필요한 모든 Device에 반드시 필요한 핵심 물질로, 특히 고특성 Display의 투명전극에서 요청되는 95% 이상의 투과도와 $15\;{\Omega}/{\square}$ 이하의 면저항 특성을 동시에 만족할 수 있는 기술은 현재까지 Plasma Sputtering 공정으로 $160^{\circ}C$ 이상에서 증착된 ITO 박막이 유일하다. 그러나, 최근 차세대 기술로서 Plastic Film을 기반으로 하는 Flexible Display 및 Flexible Solar Cell 구현에 대한 요구가 급증하면서, Plastic Film 기판위에 Plasma Damage이 없이 상온에 가까운 저온 ($100^{\circ}C$ 이하)에서 특성이 우수한 ITO 투명전극을 형성 할 수 있는 기술의 확보가 중요한 현안이 되고 있다. 지난 10년 동안 $100^{\circ}C$이하 저온에서 고특성의 ITO 또는 TCO 박막을 얻기위한 다양한 연구와 구체적인 공정이 활발히 연구되어 왔으나, ITO의 결정화 온도 (통상 $150{\sim}180^{\circ}C$)이하에서 증착된 ITO박막은 비정질 상태의 물성적 특성을 보여 원하는 전기적, 광학적 특성확보가 어려웠다. 본 논문에선 기본적으로 절연체 특성을 가져야 하는 산화물인 TCO가 반도체 또는 도체의 물리적 특성을 보여주는 기본원리의 고찰을 토대로, 재료학적 특성상 Crystalline 구조를 보여야 하는 ITO (Complex Cubic Bixbyte Structure)가 Plasma Sputtering 공정으로 저온에서 증착될 때 비정질 구조를 갖게 되는 원인을 규명하고, 이를 바탕으로 저온에서 증착된 ITO가 Crystalline 구조를 유지 할 수 있게 하고, Stress Control에 유리한 Nano-Crystalline 박막을 형성하면서 Crystallinity를 임의로 조절 할 수 있는 새로운 기술인 Magnetic Field Shielding Sputtering (MFSS) 공정과 최근 성과를 소개한다. 한편, 또 다른 새로운 저온 TCO 박막형성 기술로서, 유기반도체와 같은 Process Damage에 매우 취약한 유기물 위에 Plasma Damage 없이 TCO 박막을 직접 형성할 수 있는 Neutral Beam Assisted Sputtering (NBAS) 기술의 원리를 설명하고, 본 공정을 적용한 Top Emission OLED 소자의 결과를 소개한다. 또한, 고온공정이 수반되는 Solar Cell용 투명전극의 경우, 통상의 TCO박막이 고온공정을 거치면서 전기적 특성이 열화되는 원인을 규명하고, 이에 대한 근본적 해결 방법으로 ITO 박막의 Dopant인 Tin (Sn) 원자의 활성화를 증가시킨 Inductively Coupled Plasma Assisted DC Magnetron Sputtering (ICPDMS)의 원리와 박막의 물성적 특성과 내열 특성을 소개한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• 한국재료학회지
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• 제12권11호
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• pp.880-882
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• 2002

We have prepared magnetic thin films of FeSiB by sputtering and examined microstructure and magnetic properties of the annealed films in order to investigate the feasibility of the films to microsensor application. Effects of vacuum annealing on the magnetic properties of $Fe_{84}$$Si_{6}$$B_{10}$ films have been examined as a function of temperature. The heating rate and the holding time were 10 K/min and 1 hour, respectively. Vacuum condition was held during cooling to prevent oxidation of the films. The coercivity did not show any noticeable change (~1500 A/m), although the grain size of the crystalline phase in the annealed films increased gradually up to about 16 nm until 673 K. However, both the grain size and the coercivity increased steeply when the annealing temperature increased over 723 K. Since the saturation magnetization is closely related to the phase evolution, the variation of the saturation magnetization of the annealed films was similar to that of the ribbon materials; the thin films were transformed from amorphous to crystalline with $\alpha$-(Fe,Si) phase by increasing annealing temperature.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.238-242
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• 2005

The Pt counter electrode of a dye-sensitized solar cell (DSSC) plays a role in helping redox reaction of iodine ions in electrolyte, also, transferring electrons into electrolyte. In this case, it is expected that characteristics of Pt electrodes strongly depend on fabrication process and its surface condition. In this study, Pt electrodes were prepared by a electro-deposition and a RF magnetron sputtering. Electrochemical behavior of Pt electrodes was compared using cyclic-voltammetry and impedance spectroscopy. Surface morphology of Pt electrodes was investigated by FE-SEM and AFM. I-V characteristics of DSSC were measured and discussed in association with the surface properties of counter electrode. As a result, electrochemical properties of electro-deposited Pt electrode were superior to that of sputtered Pt electrode. This is likely that enlarged area of surface in electro-deposited Pt electrode in comparison with the case of sputtered Pt electrode playa role in enhancing such electrochemical properties.

• 한국재료학회지
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• 제9권8호
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• pp.831-836
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• 1999

RF 스퍼터링법으로 제작한 비정질 (Fe(sub)1-xCo(sub)x)(sub)89Zr11 자성박막의 자기특성을 Co농도에 따라 조사하였다. 130 Oe의 인가자기장중 190~20$0^{\circ}C$ 에서 10분간 2단 열처리를 행하였을때, 시편중 x=0.4의 박막은 높은 자왜를 나타냄에도 불구하고 0.25 Oe의 낮은 보자력 H(sub)c과, 8.7 MHz, 10 mOe의 여기자기장에서 측정된 미분투자율 $\mu$(sub)d는 280 정도로 가장 양호한 값을 나타내었다. 이와 같은 거동은 박막내 최적의 압축응력상태에서 야기된 자기이방성의 변화에 기인한다.

• Journal of Magnetics
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• 제14권1호
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• pp.18-22
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• 2009

The shape anisotropy effect of a giant magnetoresistance-spin valves (GMR-SV) device with a glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe layered structure for use in the detection of magnetic property of molecules within a cell was investigated. The patterned device was given uniaxial anisotropy during the sputtering deposition and vacuum post-annealing, which was performed at $200^{\circ}C$ under a 300 Oe magnetic field. The pattern size of the device, which was prepared through the photolithography process, was $2{\times}15\;{\mu}m^2$. The experimental results confirmed that the best design for a GMR-SV device to be used as a biosensor is to have both the axis sensing current and the easy axis of the pinned NiO/NiFe/CoFe triple layer oriented in the direction of the device's width, while the easy axis of the free CoFe/NiFe bilayer should be pointed along the long axis of the device.

• 한국재료학회지
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• 제14권2호
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• pp.94-100
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• 2004

We have investigated the magnetic domain structure and the thermal stability of magnetotransport properties of IrMn biased spin-valves containing Co, CoFe and NiFe. The magnetic domain structures were imaged using a magneto-optical indicator film(MOIF) technique. To investigate the thermal stability, magnetoresistance(MR) was measured at annealing temperature(TANN) and room temperature($T_{RT}$) followed by the annealing. Domain imaging reveal that the increase of annealing temperature led to changes in the exchange coupling between the two ferromagnet(FM) layers through nonmagnetic layer rather than between FM and antiferromagnet. unlike the NiFe biased IrMn spin valve with large domains, MOIF pictures of Co and CoFe biased IrMn spin valve structures show the formation of many small microdomains. The magnetic structure, as revealed by the domain images, appeared unchanged while the MR dropped dramatically. From the combined giant magnetoresistance(GMR) and MOIF results, it was apparent that the decrease of MR ratio was not related to the spin valve magnetic structure up to about $350^{\circ}C$($T_{RT}$ ).

• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.413-417
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• 1998

In this paper, we investigate frequency dependance of inductance of FeCoB amorphous magnetic films. $(Fe_{1-x}Co_x)_{79}Si_2B_{19}$ was used as the basic composition of amorphous magnetic film having near zero magnetostriction. The amorphous magnetic films were fabricated with x=0.94 and x=0.95 by using sputtering method at high frequency. The films were anneald under non-magnetic field and near crystallization temperatures(30min at $280^{\circ}C$, 30min and 1hr at $400^{\circ}C$, respectively). As the results of the experiments with the fabricated films, the lowest coercive force was 0.084[Oe] at 400[W] of the input power and the crystallization temperature was $360^{\circ}C$ . In the case 30min at 40$0^{\circ}C$ the inductance value in the low frequency with x=0.95 was higher by 488% than that with x=0.94. The quality factor Q was below 0.7 for all samples. We obtained the highest quality value at 400[KHz] with 30min at $280^{\circ}C$ and x=0.94. The value was about 0.62. Also, the quality factor value was about 0.35 at 1[MHz] with 30min at $280^{\circ}C$ and x=0.95.

• Journal of Magnetics
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• 제7권2호
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• pp.45-50
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• 2002

A magnetic field annealing is firstly used for nanostructured Sm-Co/Co films, prepared by magnetron sputtering method. The effects of magnetic field annealing on single-layered Sm-Co films are different from those on multi-layered Sm-Co/Co films. A detailed analysis of microstructures and magnetic properties is made by means of HRTEM, Auger electron spectroscopy, XRD and Physical Property Measurement System (PPMS). From magnetic properties and microstructure analysis, it was confirmed that these differences originate from the effects of magnetic field annealing on crystallization behavior of the films. The relationship between magnetic properties and microstructures explains a different demagnetization process of single-layered and multilayered films. For the single-layered Sm-Co films, magnetic-field-annealing makes the main phases change from $CaCu_5/ to Zn_2Th_{17}$ structure, resulting in a decrease of coercivity. The results show that the magnetic-field-annealing is useful to improve the properties of nanostructured Sm-Co(30 nm)/Co(10 nm) films, which ascribe to improving the pinning effectiveness in coercivity mechanism and decreasing the magnetostatic interaction of films. A very high coercivity about 0.7 T was obtained from nanoscaled multi-layered Sm-Co(30 nm)-/Co(10 nm) films.

• 한국자기학회지
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• 제9권4호
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• pp.203-209
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• 1999

CoCrTa/Cr 자성박막의 Cr 하지층에 Mo와 Si을 첨가하여 제조한 박막의 자기적 성질에 미치는 Mo와 Si의 영향에 대하여 조사하였다. 증착시 사용된 장비는 DC magnetron sputtering system이었고, CoCrTa 자성층의 두께는 30.0$\AA$으로 Cr 하지층의 두께는 700$\AA$으로 고정하였으며 기판의 가열온도는 26$0^{\circ}C$이었다. CrMo 하지층의 박막이 순수한 Cr 하지층에 비하여 약 200 Oe의 보자력 증가를 나타내었다. 하지만 Si을 첨가하였을 경우엔 첨가량의 증가에 따라 보자력이 점차 감소하는 것으로 나타났다. CrMo 하지층에서는Mo를 첨가함에 따라 Cr 하지츠의 (200)면의 결정배향성이 증가하였고, Mo를 첨가한 Cr(200)과 CoCrTa(110)의lattice misfit가 Si을 첨가한 경우보다 작았고, 이것이 보자력 증가의 원인이었다.