• Journal of Magnetics
• /
• v.18 no.4
• /
• pp.380-385
• /
• 2013

We find a metastable vortex state of the perpendicular magnetic anisotropy free layer in spin transfer torque magnetic tunneling junctions by using micromagnetic simulations. The metastable vortex state does not exist in a single layer, and it is only found in the trilayer structure with the perpendicular magnetic anisotropy polarizer layer. It is revealed that the physical origin is the non-uniform stray field from the polarizer layer.

• Advances in Computational Design
• /
• v.7 no.1
• /
• pp.57-68
• /
• 2022

A simulation study of the distribution of magnetic flux induced by a U-shaped electromagnet into a two-layer massive object with variations in the depth and properties of the surface layer has been carried out. It has been established that the hardened surface layer "pushes" the magnetic flux into the bulk of the magnetized object and the magnetic flux penetration depth monotonically increases with increasing thickness of the hardened layer. A change in the thickness and magnetic properties of the surface layer leads to a redistribution of magnetic fluxes passing between the poles of the electromagnet along with the layer and the bulk of the steel object. In this case, the change in the layer thickness significantly affects the magnitude of the tangential component of the field on the surface of the object in the interpolar space, and the change in the properties of the layer affects the magnitude of the magnetic flux in the magnetic "transducer-object" circuit. This difference in magnetic parameters can be used for selective testing of the surface hardening quality. It has been shown that the hardened layer pushes the magnetic flux into the depth of the magnetized object. The nominal depth of penetration of the flow monotonically increases with an increase in the thickness of the hardened layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.77-80
• /
• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.492-495
• /
• 2000

In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.550-552
• /
• 2003

We prepared $Co_{77}Cr_{20}Ta_3$ Magnetic layer for perpendicular magnetic recording media with introduce Two-step methode and Amorphous Si Underlayer on slide glass substrate. The thickness of magnetic layer were 100nm, and Underlayer were varied from 5 to 100 nm. The multi layer Properties of crystal structure were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting Buffer-layer and amorphous Si underlayer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.3
• /
• pp.281-286
• /
• 2002

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

• Journal of the Korean Magnetics Society
• /
• v.11 no.6
• /
• pp.262-266
• /
• 2001

The magnetic switching volume is known as an important parameter to understand the magnetization reversal process, thermal stability of the written information and media noise. This parameter is influenced significantly by the microstructure of the magnetic layer as well as underlayer. Therefore, we fabricated CoSm/Cr thin films with varying magnetic layer thickness under constant sputtering by using a dc magnetic sputtering machine. The magnetic layer thickness effect on the magnetic switching volume have been studied by the means of magnetic viscosity and dc demagnetization remanence curve mesurements. From these measurements, we found that the switching volumes increased with increasing the magnetic layer thickness, whereas the coercivity showed different behavior. These may be a result of the increased intergranular coupling and the larger volume fraction of the magnetic layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.463-465
• /
• 2002

In order to increase perpendicular magnetic anisotropy of magnetic layer and prepare magnetic recording layer with a good quality by epitaxial growth between magnetic layer and, we prepared Co$\_$77/Cr$\_$20/Ta$_3$/Si doublelayer for perpendicular magnetic recording media which was promoted as next generation recording media on slide glass substrate. The thickness of magnetic layer and Underlayer were varied from 20 to 100 nm and 5 to 100 m, respectively. The surface morphology and crystal structure of the CoCrTa/Si film were examined with XRD and AFM. Prepared thin films showed improvement of dispersion angle of c-axis orientation Δ$\theta$$\_$50/ caused by inserting amorphous Si underlayer.

• Journal of the Korean Magnetics Society
• /
• v.3 no.4
• /
• pp.320-324
• /
• 1993

The effect of sputtering conditions on magnetic properties of CoCrMo/Cr magnetic thin film was investigated. Substrate temperature were controlled from R. T to $250^{\circ}C$. The thickness changes of Cr underlayer and CoCrMo magnetic layer were in the range of $1000-2500\AA$ and $300-800\AA$, respectively. Grain size was found to be decreased with increasing magnetic layer thickness(from $500\AA$ to $800\AA$). CoCrMo magnetic layer microstructure showed relatively small dependence on Cr underlayer thickness, substrate temperature. Coercivity increased with increasing Cr underlayer, magnetic layer thickness and substrate temperature. CoCrMo/Cr thin film showed a coercivity of 880 Oe in $700\AA$ magnetic layer thickness and $1000\AA$ Cr underalyer thickness.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.68-69
• /
• 2002

Magnetic tunnel junctions은 최근 자기저항용 재료나 MRAM용 소자로 사용하기 위한 연구가 활발하게 진행되고 있다. Magnetic tunnel junction을 저자계, 저전력용 소자로 사용되기 위해서는, 작은 switching field 값과 uniform한 switching field 분포를 가져야 한다. Micromagnetic simulation을 통하여 free layer의 두께와 포화 자화 값이 감소함에 따라서 switching field가 감소함을 알 수 있었다. 본 연구에서는 얇은 free layer를 사용하여 magnetic tunnel junction을 제조하고, 얇은 free layer가 자기저항에 미치는 영향에 대하여 알아보았다. (중략)