• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.782-784
• /
• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.370-374
• /
• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.08a
• /
• pp.128-132
• /
• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• Electrical & Electronic Materials
• /
• v.9 no.5
• /
• pp.512-517
• /
• 1996

본 고는 반도체 재료가 갖는 자기효과를 이용하여 자기센서의 종류 및 특성등에 대하여 서술하였다. 반도체 LSI의 응용분야가 확대됨에 따라서 반도체 센서를 이용한 극소형화, 고성능화, 저가격화, 다기능화등이 가능하게 되었다. 이러한 상황에서 반도체를 이용한 홀 소자나 자기저항 소자와 같은 자기센서 등을 주변회로와 일체화시킨 초소형 시스템에 대한 연구가 활발하다. 특히 화합물 반도체는 자기센서에 적합한 물리적인 특성을 갖고 있기 때문에, 자기센서로 효율을 나타내고 있다. 반도체의 미세가공기술의 발전과 LSI제조기술의 발전을 이용하여 센서의 집적화, 저가격화를 가능하게 하였으며, 다른 종류의 반도체 센서들을 자기센서와 함께 하나의 칩위에 장착할 수 있는 응용집적센서(Application-specific Integrated Sensor)가 더욱 중요한 역할을 할 것이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.7
• /
• pp.515-521
• /
• 2013

Magnetoelectric(ME) bulk composites with PZT-PNN-PZN/$Fe_2O_4$ were prepared by using a conventional ceramic methods and investigated on the ME voltage vs frequency of ac magnetic fields. We made the electric equivalent circuits by using the Maxwell-Wagner model and simulated the frequency dependence of ME voltage in low frequency region. ME devices were described by a series of two equivalent circuits of piezoelectric and magnetic, which have the relaxation time ${\tau}$ due to the interaction between ME device and load resistor. Equivalent circuit of piezoelectric material is independent of frequency. However ferrite magnetic materials have Debye absorption and dipolar dispersion, whose equivalent circuit is a function of frequency. Therefore we suggest the resistance in the equivalent circuit is proportion to $1+{\omega}^2{\tau}^2$ and the capacitance is in inverse proportion to $1+{\omega}^2{\tau}^2$ in the magnetic materials.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.27 no.3
• /
• pp.175-179
• /
• 2022

Magnetic arc extinguishing technology is effective as an extinguishing device for low-voltage direct current (DC) circuit breakers with a resistive load of ≤4 kW. The separation distance between the magnet and the electrical contact must be shortened to increase the magnetic arc extinguishing force. However, if the magnet is installed too close to the electrical contact points, the magnet is exposed to high temperatures due to the arc current generated when the load current is cut off and the magnetism is lost. To solve this problem, the effective magnetic flux density at the electrical contact can be maintained high by placing the arc extinguishing magnet in a tandem structure with the electrical contact point between them, and the proper separation distance between the contact points and the magnet can be maintained. In addition, an electric arc extinguishing technology that emits arc energy using a series circuit of diode and resistor is used to suppress the continuous arc voltage generated by the inductive load. For the proposed circuit breaker, the breaking characteristics are analyzed through the breaking test for the DC load of the 760 V level, the load power of 4 kW, and the time constant of 5 ms, and an appropriate arc extinguishing design guideline is proposed.

• KEPCO Journal on Electric Power and Energy
• /
• v.1 no.1
• /
• pp.15-20
• /
• 2015

To examine the magnetic shielding effect for carbon-based materials at extremely low frequencies (60 Hz), two types of carbon black (Super-P and Denka Black) and a natural graphite (HC-198) were mixed into organic binder at 10 wt.% to produce a coating solution, and a powder coating with varying thickness was applied on an aluminum disk measuring 88 mm in radius. A device was developed to measure the sheielding effect at extremely low frequencies. A closed circuit was achieved by connecting a transformer and a resistor. The applied voltage was fixed at 65 V, and the magnetic field was measured to being the range of 4.95~5.10 mG. Depending on the thickness of the coating layer, the magnetic field showed a decreasing trend. The maximum decrease in the magnetic field of 38.3% was measured when natural graphite was coated with specimens averaging $455{\mu}m$. This study confirmed that carbon-based materials enable magnetic shielding at extremely low frequencies, and that the magnetic shielding effect can be enhanced by varying the coating thickness.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.174-174
• /
• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

• Journal of the Korean Society of Safety
• /
• v.38 no.4
• /
• pp.8-14
• /
• 2023

This study presents the characteristics of short circuits (SCs) caused by excessive currents in high-voltage cables used in electric vehicles and emphasizes the need to calculate the cross-sectional areas of these cables according to the SC current. Three direct current power supplies were connected in parallel to test the SC characteristics caused by excessive currents, and a timer and a magnetic contactor were used to deliver the conduction time and SC current. A circular infrared-radiation heater was used to test the temperature-dependent SC characteristics, a thermocouple was used to measure the temperature, and a shunt resistor was used to measure the current. As the SC current increased, the fusing time of the cable decreased. Additionally, a high-voltage cable (with an area of 16 mm² ) used in electric vehicles fused when a current (approximately equal to 55 times the allowable current) flowed for 0.2 s (operating time of the protective device). When the SC current is 10 kA, the cable may fuse during the operating time of the protective device, thus creating a fire hazard. In electric vehicles, the size of the SC current increases in proportion to the capacity of the battery. Thus, the cross-sectional areas of the cables used should be calculated accordingly, and cable operations should be properly coordinated with the surrounding protective devices.

• Journal of the Microelectronics and Packaging Society
• /
• v.31 no.2
• /
• pp.69-77
• /
• 2024

Due to the miniaturization and multifunctionality of electronic devices, a surface mount technology in the form of molded interconnect devices (MID), which directly forms electrodes and circuits on the plastic injection parts and mounts components and parts on them, is being introduced to overcome the limitations in the mounting area of electronic components. However, when using plastic injection parts with low thermal stability, there are difficulties in mounting components through the conventional reflow process. In this study, we developed a process that utilizes induction heating, which can selectively heat specific areas or materials, to melt solder and mount components without causing any thermal damage to the plastic. We designed the shape of an induction heating Cu coil that can concentrate the magnetic flux on the area to be heated, and verified the concentration of the magnetic flux and the degree of heating on the pad part through finite element method (FEM). LEDs, capacitors, resistors, and connectors were mounted on a polycarbonate substrate using induction heating to verify the mounting process, and their functionality was confirmed. We presented the applicability of a selective heating process through magnetic induction that can overcome the limitations of the reflow method.