• Title/Summary/Keyword: Magnetic Hall device

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Analysis of Magnetic Field Variation for Pulse Wave by Using Finite Element Method (유한 요소법을 이용한 맥진 파형의 자기장 변화 분석)

  • Park, Tae-Young;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.24 no.3
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    • pp.90-96
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    • 2014
  • The magnetic field variation by the permanent magnet fluctuation positioned on a "Chwan" of wrist according to the movement of radial artery was generated. The clip-type pulsimeter equipped with a Hall device sensing magnetic field pulse movement analyzed the characteristics of pulse wave as output signals. The magnetic field curve and pulse waveform simulated by the finite element method were compared and analyzed with each other. Also, the variation of magnetic field distribution one permanent magnet investigated by the fabrication of clip-type pulsimeter simulator. This result suggests that the clip-type pulsimeter can be used the reproducible and efficacious oriental diagnostic medical instrument.

Quantum Hall Effect of CVD Graphene

  • Kim, Young-Soo;Park, Su-Beom;Bae, Su-Kang;Choi, Kyoung-Jun;Park, Myung-Jin;Son, Su-Yeon;Lee, Bo-Ra;Kim, Dong-Sung;Hong, Byung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.454-454
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    • 2011
  • Graphene shows unusual electronic properties, such as carrier mobility as high as 10,000 $cm^2$/Vs at room temperature and quantum electronic transport, due to its electronic structure. Carrier mobility of graphene is ten times higher than that of Silicon device. On the one hand, quantum mechanical studies have continued on graphene. One of them is quantum Hall effect which is observed in graphene when high magnetic field is applied under low temperature. This is why two dimension electron gases can be formed on Graphene surface. Moreover, quantum Hall effect can be observed in room temperature under high magnetic field and shows fractional quantization values. Quantum Hall effect is important because quantized Hall resistances always have fundamental value of h/$e^2$ ~ 25,812 Ohm and it can confirm the quantum mechanical behaviors. The value of the quantized Hall resistance is extremely stable and reproducible. Therefore, it can be used for SI unit. We study to measure quantum Hall effect in CVD graphene. Graphene devices are made by using conventional E-beam lithography and RIE. We measure quantum Hall effect under high magnetic field at low temperature by using He4 gas closed loop cryostat.

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Position Detection of a Capsule-type Endoscope by Magnetic Field Sensors (자계 센서를 이용한 캡슐형 내시경의 위치 측정)

  • Park, Joon-Byung;Kang, Heon;Hong, Yeh-Sun
    • Journal of the Korean Society for Precision Engineering
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    • v.24 no.6
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    • pp.66-71
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    • 2007
  • Development of a locomotive mechanism for the capsule type endoscopes will largely enhance their ability to diagnose disease of digestive organs. As a part of it, there should be provided a detection device of their position in human organs for the purpose of observation and motion control. In this paper, a permanent magnet outside human body was employed to project magnetic field on a capsule type endoscope, while its position dependent flux density was measured by three hall-effect sensors which were orthogonally installed inside the capsule. In order to detect the 2-D position data of the capsule with three hall-effect sensors including the roll, pitch and yaw angle, the permanent magnet was extra translated during the measurement. In this way, the 2-D coordinates and three rotation angles of a capsule endoscope on the same motion plane with the permanent magnet could be detected. The working principle and performance test results of the capsule position detection device were introduced in this paper showing that they could be also applied to 6-DOF position detection.

Fabrication of High-Temperature Si Hall Sensors Using Direct Bonding Technology (직접접합기술을 이용한 고온용 Si 홀 센서의 제작)

  • Chung, G.S.;Kim, Y.J.;Shin, H.K.;Kwon, Y.S.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1431-1433
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    • 1995
  • This paper describes the characteristics of Si Hall sensors fabricated on a SOI(Si-on-insulator} structure, in which the SOI structure was forrmed by SDB(Si-wafer direct bonding) technology. The Hall voltage and the sensitivity of implemented Si Hall devices show good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average $600V/A{\cdot}T$. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the product Sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. From these results, Si Hall sensors using the SOI structure presented here are very suitable for high-temperature operation.

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Temperature Characteristics of SDB SOI Hall Sensors (SDB SOI 흘 센서의 온도 특성)

  • 정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.227-229
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    • 1995
  • Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.

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Micro structures and electronic behavior of InSb using by co-sputtering method (Co-sputtering법으로 제조한 InSb 박막의 미세구조와 전자거동)

  • Kim, Tae-Hyong;So, Byung-Moon;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.782-784
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    • 2002
  • Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

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Pulse Wave Velocity Measured by Radial Artery Clip-type Pulsimeter Equipped with a Hall Device and Electrocardiogram (홀소자가 구비된 요골동맥 집게형맥진기와 심전도로 측정된 맥파전달속도)

  • Lee, Kyu-Hwan;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.23 no.4
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    • pp.130-134
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    • 2013
  • The clip-type pulsimeter equipped with a magnetic sensing Hall device and the most popular body sign of the electrocardiogram (ECG) were investigated in order to analyze the pulse wave velocity (PWV). The PWV simultaneously calculated by means of time difference between the maximum peak of ECG pulse wave and the starting point of radial artery pulse wave, and distance difference between the heart position and the radial wrist position. The PWV analyzed from the clinical data was a wider scope of 5~7 m/s with an average value of 6 m/s. By the prediction of blood vessel's elasticity from the analysis of PWV, it may be useful for developing an oriental-western diagnostic medical signal device for a U-health-care system in the future.

Design of Hall Sensor based Electronic Engine Cooling System (홀 센서 기반 전자식 엔진냉각제어 시스템 설계)

  • Koh, Young-Ho;Kim, Hyun-Hee;Lee, Kyung-Chang
    • Journal of the Korean Society of Industry Convergence
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    • v.20 no.4
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    • pp.325-332
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    • 2017
  • The engine cooling system is a device that maintains the temperature in the engine room at an appropriate level by driving a cooling fan when the temperature in the engine room generated during the vehicle operation occurs over a certain temperature. In recent years, the vehicle cooling system has changed to an electronic system. Therefore, in this paper, we design and develop a hall sensor based electronic engine cooling system. In this paper, a hall sensor module and an actuator module for engine cooling control system are designed. In order to verify the performance of the designed module, the magnetic field control was verified through the simulation of the diameter and the head of the coil.

Measurement of a Blood Velocity by using Photoplethysmograph and Radial Artery Pulse Wave Equipped with Magnetic Hall Device (자성 홀소자 맥진기와 용적맥파계의 맥진파형을 이용한 혈류속도 측정 연구)

  • Jang, Deok-Hyeong;Kim, Dam-Bee;Choi, Suel-Gi;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.22 no.4
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    • pp.130-135
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    • 2012
  • One prototype product of clip-type pulsimeter equipped with magnetic field sensing semiconductor Hall device after one permanent magnet attached "Chwan" position in center of a radial artery was developed. The clip-pulsimeter was composed of the hard ware system measuring to voltage signals. To measure the blood velocity, the radial artery pulsimeter is simultaneously connected the PPG (photoplethysmograph). Analysis and comparison of two pulse waves data has done obtained from a clinical test of forty subjects of 20 ages. The value of a blood velocity simultaneously measured from a radial artery puls wave and PPG is an average value of 0.8m/s. The usage of this research results is possible to store the biomedical signals for health care.