• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.14-15
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• 2010

Recently there has been growing interest in topological insulators or the quantum spin Hall (QSH) phase, which are insulating materials with bulk band gaps but have metallic edge states that are formed topologically and robust against any non-magnetic impurity [1]. In a three-dimensional material, the two-dimensional surface states correspond to the edge states (topological metal) and their intriguing nature in terms of electronic and spin structures have been experimentally observed in bulk Bi1-xSbx single crystals [2,3,4]. However, if we want to know the transport properties of these topological metals, high purity samples as well as very low temperature will be needed because of the contribution from bulk states or impurity effects. In a recent report, it was also shown that an intriguing coupling between the surface and bulk states will occur [5]. A simple solution to this bothersome problem is to prepare a topological metal on an ultrathin film, in which the surface-to-bulk ratio is drastically increased. Therefore in the present study, we have investigated if there is a method to make an ultrathin Bi1-xSbx film on a semiconductor substrate. From reflection high-energy electron diffraction observation, it was found that single crystal Bi1-xSbx films (0${\sim}30\;{\AA}A$ can be prepared on Si(111)-$7{\times}7$. The transport properties of such films were characterized by in situ monolithic micro four-point probes [6]. The temperature dependence of the resistivity for the x=0.1 samples was insulating when the film thickness was $240\;{\AA}A$. However, it became metallic as the thickness was reduced down to $30\;{\AA}A$, indicating surface-state dominant electrical conduction. Figure 1 shows the Fermi surface of $40\;{\AA}A$ thick Bi0.92Sb0.08 (a) and Bi0.84Sb0.16 (b) films mapped by angle-resolved photoemission spectroscopy. The basic features of the electronic structure of these surface states were shown to be the same as those found on bulk surfaces, meaning that topological metals can be prepared at the surface of an ultrathin film. The details will be given in the presentation.

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.142-146
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• 2008

The angular dependence of the exchange bias($H_{ex}$) and coercivity($H_c$) in multilayer $[Pt/Co]_N-IrMn$ with applied measuring field rotated toward in-plane at angle $\theta$ from perpendicular-to-plane, has been measured. Multilayer films consisting of $Si/SiO_2/Ta(50)/Pt(4)/[Pt(15)/Co(t_{Co})]_N/IrMn(50)/Ta(50)(in\;{\AA})$ were prepared by magnetron sputtering under typical base pressure below $2{\times}10^{-8}$ Torr at room temperature. Magnetization measurements were performed on a vibrating sample magnetometer and extraordinary Hall voltage measurement systems after cooling from 550 K under a field of 2 kOe applied along the perpendicular to film direction. The hysteresis loop shifts from the origin not only along the field axis but also along the magnetization axis. $H_{ex}$ and $H_c$ show a $1/cos{\theta}$ and $1/|cos{\theta}|$ dependence on the angle($\theta$) between the applied measuring field and the perpendicular-film direction, respectively. This $1/cos{\theta}$ dependence can be accounted for by considering the angular dependence of strong out-of-plane magnetic anisotropy introduced during the field cooling.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.12
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• pp.907-914
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• 2018

Wireless charging has been actively researched and popularized owing to the potential convenience of being able to charge electronic devices without wires for users. However, the receiver on the wireless charging pad is not charged when the center of the receiver is misaligned; thus, the center of the receiver must be adjusted well. This misalignment may greatly reduce the convenience of wireless charging. To overcome this limitation of wireless charging, a coil is designed to improve the positional freedom of the receiver. The positional freedom of the Rx coil is improved when the outer diameter of Tx coil is larger than when Rx and Tx coils are almost the same size. When the Tx coil has a larger outer diameter than that of the Rx coil, the efficiency at the center is somewhat lowered, but the efficiency is improved compared to when the center is out of order. In this paper, a double coil structure having an outer and an inner coil is proposed. The double coil structure further improves the efficiency, compared with one coil with the same outer size. The simulation and measurement results demonstrated that the tendency was consistent, and it was verified that the degree of freedom of the Rx coil is improved by adding the inner coil, while the size of the outer coil was the same. The measurement shows that the transmission efficiency of the conventional Tx coil is 37 %, the larger outer diameter coil is 45 %, and double coil is 47 % when the distance of the Tx/Rx coil is 3 mm, the misalignment is 15 mm and current flowing in the Rx coil is 1 A at an operating frequency of 105 to 210 kHz.