• 전력전자학회:학술대회논문집
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• 전력전자학회 1996년도 창립기념 전력전자학술발표회 논문집
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• pp.63-66
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• 1996

An micro model for the power insulated Gate Bipolar Transistor(IGBT) is developed. The model consistently described the IGBT steady-state current-voltage characteristics and switching transient current and voltage waveform for all loading conditions. The model is based on the equivalent circuit of a MOSFET with supplies the base current to a low-gain, high-level injection, bipolar transistor with its base virtual contact at the collector and of the base. Model results are compared with measured turn-on and turn-off waveform for different drive, load, and feedback circuits.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.1117-1119
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• 2001

This paper describes the forward type pulse power supply using a Power-MOSFET in the view of commercialization. The principle of basic operating and the operating characteristics of the forward type pulse power supply are estimated by the switching frequency, coupling factor and duty ratio. It is shown that theoretical and experimental results are in good agreement by comparing simulation and experimental results when a lamp type ozonizer can be used as a load. Also, experimental results indicate that the discharge and ozone concentration characteristics of the manufactured pulse power supply is more improved compare to the conventional pulse power supply[5]. This proposed supply show that it can be practically used as a pulse power supply in various environment improvement facilities.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2019년도 전력전자학술대회
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• pp.279-280
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• 2019

본 논문에서는 3KW급 전력변환장치에 적용 가능한 650V급 GaN FET를 사용하여 Half-bridge 구조의 개발보드를 설계 및 제작하고, Double pulse test 실험을 통해 Turn-on 및 off 시스위칭 특성을 분석하였다. 또한 동기정류식 Buck 컨버터에 GaN FET을 적용하고, 유사한 전압 및 전류 정격의 Si MOSFET 소자와 시스템 효율을 비교하여 GaN FET 전력반도체의 성능을 평가하였다.

• 전력전자학회논문지
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• 제22권4호
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• 조명전기설비학회논문지
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• 제20권2호
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• pp.16-23
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• 2006

본 논문에서는 고역률을 가지고 영전압 스위칭으로 동작되는 새로운 단일 전력단 고주파 공진 인버터 링크형 DC-DC 컨버터 회로에 관하여 기술하고 있다. 제안된 토폴로지는 역률 교정기로써 하프 브리지형 부스트 컨버터와 하프 브리지 고주파 공진 컨버터를 단일 전력단으로 일체화 시켰다. 역률 보상용 부스트 컨버터의 부스트 인덕터 전류를 가변 스위칭 주파수와 일정 듀티비를 가지고 불연속 전류 모드(DCM)로 동작시킴으로써 부가적인 입력 전류제어기 없이 높은 입력 역률을 얻을 수 있다. 또 제안한 토폴로지의 이론해석을 무차원화 파라미터를 도입하여 범용성 있게 하여 회로 설계 전단계에서 필요한 특성값을 도식적으로 표현하다. 첨가해, 제안한 토폴로지의 상용화 가능성과 이론해석의 정당성을 입증하기 위해 스위칭 소자로 Power-MOSFET IRF 740을 제안회로 토폴로지의 스위칭 소자로 채용해 실험 장치를 구성하여 검토를 행하였다. 제안된 컨버터는 향후 통신용 DC/DC 컨버터의 전원장치, 방전등용 진원장치 등의 전원시스템에 유용히 사용될 것으로 사료된다.