• Progress in Medical Physics
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• v.18 no.1
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• pp.48-54
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• 2007

This study is to develope a phantom for MOSFET (Metal Oxide Semiconductors Field Effect Transistors) dosimetry and compare the dosimetric properties of standard MOSFET and microMOSFET with the phantom. In this study, the developed phantom have two shape: one is the shape of semi-sphere with 10cm diameters and the other one is the flat slab of $30{\times}30cm$with 1 cm thickness. The slab phantom was used for calibration and characterization measurements of reproducibility, linearity and dose rate dependency. The semi-sphere phantom was used for angular and directional dependence on the types of MOSFETs. The measurements were conducted under $10{\times}10cm^2$ fields at 100cm SSD with 6MV photon of Clinac (21EX, Varian, USA). For calibration and reproducibility, five standard MOSFETS and microMOSFETs were repeatedly Irradiated by 200cGy five times. The average calibration factor was a range of $1.09{\pm}0.01{\sim}1.12{\pm}0.02mV/cGy$ for standard MOSFETS and $2.81{\pm}0.03{\sim}2.85{\pm}0.04 mV/cGy$ for microMOSFETs. The response of reproducibility in the two types of MOSFETS was found to be maximum 2% variation. Dose linearity was evaluated In the range of 5 to 600 cGy and showed good linear response with $R^2$ value of 0.997 and 0.999. The dose rate dependence of standard MOSFET and microMOSFET was within 1% for 200 cGy from 100 to 500MU/min. For linearity, reproducibility and calibration factor, two types of MOSFETS showed similar results. On the other hand, the standard MOSFET and microMOSFET were found to be remarkable difference in angular and directional dependence. The measured angular dependence of standard MOSFET and microMOSFET was also found to be the variation of 13%, 10% and standard deviation of ${\pm}4.4%,\;{\pm}2.1%$. The directional dependence was found to be the variation of 5%, 2% and standard deviation of ${\pm}2.1%,\;{\pm}1.5%$. Therefore, dose verification of radiation therapy used multidirectional X-ray beam treatments allows for better the use of microMOSFET which has a reduced angular and directional dependence than that of standard MOSFET.

• Journal of Radiation Protection and Research
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• v.31 no.2
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• pp.97-104
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• 2006

In recent years, the MOSFET dosimeter has been widely used in various medical applications such as dose verification in radiation therapeutic and diagnostic applications. The MOSFET dosimeter is, however, mainly made of silicon and shows some energy dependence for low energy Photons. Therefore, the MOSFET dosimeter tends to overestimate the dose for low energy scattered photons in a phantom. This study determines the correction factors to compensate these dependences of the MOSFET dosimeter in ATOM phantom. For this, we first constructed a computational model of the ATOM phantom based on the 3D CT image data of the phantom. The voxel phantom was then implemented in a Monte Carlo simulation code and used to calculate the energy spectrum of the photon field at each of the MOSFET dosimeter locations in the phantom. Finally, the correction factors were calculated based on the energy spectrum of the photon field at the dosimeter locations and the pre-determined energy and directional dependence of the MOSFET dosimeter. Our result for $^{60}Co$ and $^{137}Cs$ photon fields shows that the correction factors are distributed within the range of 0.89 and 0.97 considering all the MOSFET dosimeter locations in the phantom.

• Progress in Medical Physics
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• v.15 no.4
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• pp.215-219
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• 2004

Due to their excellence for the high-energy therapy range of photon beams, researchers show increasing interest in applying MOSFET dosimeters to low- and medium-energy applications. In this energy range, however, MOSFET dosimeter is complicated by the fact that the interaction probability of photons shows significant dependence on the atomic number, Z, due to photoelectric effect. The objective of this study is to develop a very detailed 3-dimensional Monte Carlo simulation model of a MOSFET dosimeter for radiological characterizations and calibrations. The sensitive volume of the High-Sensitivity MOSFET dosimeter is very thin (1 ${\mu}{\textrm}{m}$) and the standard MCNP tallies do not accurately determine absorbed dose to the sensitive volume. Therefore, we need to score the energy deposition directly from electrons. The developed model was then used to study various radiological characteristics of the MOSFET dosimeter. the energy dependence was quantified for the energy range 15 keV to 6 MeV; finding maximum dependence of 6.6 at about 40 keV. A commercial computer code, Sabrina, was used to read the particle track information from an MCNP simulation and count the tracks of simulated electrons. The MOSFET dosimeter estimated the calibration factor by 1.16 when the dosimeter was at 15 cm depth in tissue phantom for 662 keV incident photons. Our results showed that the MOSFET dosimeter estimated by 1.11 for 1.25 MeV photons for the same condition.

• Journal of Radiation Protection and Research
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• v.31 no.4
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• pp.165-171
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• 2006

In Korea, a real-time effective dose measurement system is in development. The system uses 32 high-sensitivity MOSFET dosimeters to measure radiation doses at various organ locations in an anthropomorphic physical phantom. The MOSFET dosimeters are, however, mainly made of silicon and shows some degree of energy and angular dependence especially for low energy photons. This study determines the correction factors to correct for these dependences of the MOSFET dosimeters for accurate measurement of radiation doses at organ locations in the phantom. For this, first, the dose correction factors of MOSFET dosimeters were determined for the energy spectrum in the steam generator channel of the Kori Nuclear Power Plant Unit #1 by Monte Carlo simulations. Then, the results were compared with the dose correction factors from 0.652 MeV and 1.25 MeV mono-energetic photons. The difference of the dose correction factors were found very negligible $(\leq1.5%)$, which in general shows that the dose corrections factors determined from 0.662 MeV and 1.25 MeV can be in a steam general channel head of a nuclear power plant. The measured effective dose was generally found to decrease bit $\sim7%$ when we apply the dose correction factors.

• The Journal of Korean Society for Radiation Therapy
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• v.27 no.2
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• pp.107-113
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• 2015

Purpose : The measurement of skin dose is very important that treatment of breast cancer. On account of the cold or hot dose as compared with prescription dose, it is necessary to analyse the skin dose occurring during the various plan of the breast cancer treatment. At our hospital, we want to apply various analyses using a diversity of dosimeters to the breast cancer treatment. Subjectss and Methods : In the study, the anthropomorphic phantom is used to find out the dose difference of the skin(draining site), scar and others occurring from the tangential treatment plan of breast cancer. We took computed tomography scan of the anthropomorphic phantom and made plans for the treatment planing using open and wedge, Field-in-Field, Dose fluence. Using these, we made a comparative analysis of the dose date points by using the Eclipse. For the dose comparison, we place the anthropomorphic phantom in the treatment room and compared the measurement results by using the TLD and MOSFET on the dose data points. Results : On the central point of treatment planing basis, the upward and downward skin dose measured by the MOSFET was the highest when the fluence was used. The skin dose of inner and outer was distinguished from the figure(5.7% ~ 10.3%) when the measurements were fulfilled by using TLD and MOSFET. The other side of breast dose was the lowest in the open beam, on the other hand, is highest in the Dose fluence plan. In the different kinds of treatment, the dose deviation of inner and outer was the highest, and so this was the same with the TLD and MOSFET measurement case. The outer deviation was highest in the TLD, and the Inner'was highest in the MOSFET. Conclusion : Skin dose in relation to the treatment plan was the highest in the planing using the fluence technique in general and it was supposed that the high dose had been caused by the movement of the MLC. There's some differences among the all the treatment planning, but the sites such as IM node occurring the lack of dose, scar, drain site are needed pay close attention. Using the treatment planning of dose fluence is good to compensate the lack of dose, but It increases the dose of the selective range rather than the overall dose. Therefore, choosing the radiotherapy technique is desirable in the lights of the age and performance of the patient.

• Proceedings of the KIEE Conference
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• 2005.10b
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• pp.430-432
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• 2005

저에너지 중성자가 가톨리늄(Gd) 막에 입사되면 중성자 포획과정에서 전환전자가 생성된다. 이 전환전자에 의해 pMOSFET $SiO_2$ 산화층에서 발생된 전자-전공쌍이 발생되고, 이 가운데 정공은 산화층 내부에 쉽게 붙잡혀(Trap) 양전하 센터로 작용하게 된다. 이 축적된 전하는 pMOSFET의 문턱전압(Threshold voltage)을 변화시킨다. 본 연구에서는 이러한 간접측정 원리를 이용하여 열중성자를 실기간 탐지할 수 있는 반도체형 탐지소자를 개발하고 하나로(HANARO) 방사선장에서의 시험을 통해 성능을 검증하였다. 그리고 감도관련 변수의 최적화를 통하여 작업자가 사용 가능한 범위의 고감도 열중성자 선량계로 개선 제작하였다. 개발된 선량계는 소형으로 실시간 열중성자 측정이 가능하며 감마방사선으로부터 독립적으로 열중성자를 측정할 수 있는 장점도 지니고 있다.

• Progress in Medical Physics
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• v.17 no.1
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• pp.17-23
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• 2006

In Vivo dosimetry is a method to evaluate the radiotherapy; it is used to find the dosimetric and mechanical errors of radiotherapy unit. In this study, on-line In Vivo dosimetry was enabled by measuring the skin dose with MOSFET detectors attached to patient's skin during treatment. MOSFET dosimeters were found to be reproducible and independent on beam directions. MOSFET detectors were positioned on patient's skin underneath of the dose build-up material which was used to minimize dosimetric error. Delivered dose calculated by the plan verification function embedded in the radiotherapy treatment planning system (RTPs), was compared with measured data point by point. The dependency of MOSFET detector used in this study for energy and dose rate agrees with the specification provided by manufacturer within 2% error. Comparing the measured and the calculated point doses of each patient, discrepancy was within 5%. It was enabled to verify the IMRT by using MOSFET detector. However, skin dosimetry using conventional ion chamber and diode detector is limited to the simple radiotherapy.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.102-105
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• 2006

In-vivo dosimetry is an essential tool of quality assurance programs in radiotherapy. The most commonly used techniques to verify dose are thermoluminescence dosimeter (TLD) and diode detectors. Metal oxide semiconductor field-effect transistor (MOSFET) has been recently proposed for using in radiation therapy with many advantages. The reproducibility, linearity, isotropy, dose rate dependence of the MOSFET dosimeter were studied and its availability was verified. Consequently the results can be used to improve therapeutic planning procedure and minimize treatment errors in radiotherapy.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.95-101
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• 1999

When a metal oxide field effect transistor (MOSFET) is exposed to ionizing radiation, electron/hole pairs are generated in its oxide layer. The slow moving holes of them are trapped in the oxide layer of p-MOSFET and appear as extra charges that change the characteristics of the transistor. The radiation-induced charges directly impact the threshold (turn-on) voltage of the transistor. This paper describes the use of the radiation-induced threshold voltage change as an accumulated radiation dose monitoring sensor. Two kinds of commercial p-type MOSFETS were tested in a Co-60 gamma irradiation facility to see their capabilities as a radiation dosimeter. We found that the transistors showed good linearity in their threshold voltage shift characteristics with radiation dose. The results demonstrate the potential use of commercial p-MOSFETS as inexpensive radiation sensors for the first time.

• Journal of the Korean Society of Radiology
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• v.5 no.6
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• pp.383-389
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• 2011

This study offered a new method to calculate absorbed dose of actual patients through Monte Carlo Simulation by using the linkage of Geant4 and DICOM, and, the experimental value of absorbed dose at the center and Geant 4 simulation result according to the depth of PMMA mock phantom were compared by using MOSEF in order to verify Geant4 calculation code. In the area where there was no air space between the irregular gap due to incomplete compression of PMMA slab, the differences were $0.46{\pm}4.69$ percent and $-0.75{\pm}5.19$percent in $15{\times}15cm^2$ and $20{\times}20cm^2$ respectively. Excluding the error due to incomplete compression of PMMA mock phantom, the calculation values of the Monte Carlo simulation by linkage of Geant4 and DICOM was the same.