Journal of Sensor Science and Technology (센서학회지)
- Volume 8 Issue 2
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- Pages.95-101
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- 1999
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Development of Radiation Dosimeter using Commercial p-MOSFET
상용 p-MOSFET을 이용한 방사선 선량계 개발
-
Lee, Nam-Ho
(KAERI) ;
-
Choi, Young-Su
(KAERI) ;
- Lee, Yong-B. (KAERI) ;
- Youk, Geun-Uck (Inventors' Enterprise, Inc.)
- Published : 1999.03.31
Abstract
When a metal oxide field effect transistor (MOSFET) is exposed to ionizing radiation, electron/hole pairs are generated in its oxide layer. The slow moving holes of them are trapped in the oxide layer of p-MOSFET and appear as extra charges that change the characteristics of the transistor. The radiation-induced charges directly impact the threshold (turn-on) voltage of the transistor. This paper describes the use of the radiation-induced threshold voltage change as an accumulated radiation dose monitoring sensor. Two kinds of commercial p-type MOSFETS were tested in a Co-60 gamma irradiation facility to see their capabilities as a radiation dosimeter. We found that the transistors showed good linearity in their threshold voltage shift characteristics with radiation dose. The results demonstrate the potential use of commercial p-MOSFETS as inexpensive radiation sensors for the first time.
반도체 센서(p-MOSFET)가 이온화 방사선에 노출되면 산화층내에 전자-정공이 생성되고, 이들 중에서 이동도가 낮은 정공은 이동중 산화층내에 트랩(trap)되어 센서의 출력 특성을 변화시킨다. 본 논문에서는 p-MOSFET를 방사선 누적선량 모니터링 센서로 활용하기 위해 국산 및 일산의 상용 p-MOSFET를 Co-60
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