• 제목/요약/키워드: MIS 5a

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남서태평양 리코후 드리프트 퇴적층의 쇄설성 실트입자 크기의 수직적 변화를 이용한 플라이스토세 후기 심해서안경계해류의 세기 변화 (Late Pleistocene Variation in Intensity of Deep Western Boundary Current from Vertical Change in Size of Terrigenous Silt in the Rekohu Sediment Drift, SW Pacific)

  • 김부근;이영주;박유현;박장준
    • Ocean and Polar Research
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    • 제28권4호
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    • pp.451-457
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    • 2006
  • Hole 1124 of ODP Leg 181 was located in the Rekohu sediment drift off eastern New Zealand in the southwest Pacific Ocean. Mean gain sizes of sortable silt were measured in two drilled cores (1124A and l124B). Chronostratigraphy of core 1124 was correlated with the well-dated nearby core S931, resulting that the age of core 1124 covers the late Pleistocene spanning about MIS (Marine Isotope Stage) 5. Mean grain size of sortable silt seemed to be relatively large during the glacial period, whereas that of the interglacial period was smaller, although several tephra layers contain some coarse-grained pyroclatic particles. The variation in mean grain size of sortable silt in Rekohu sediment drift during the late Pleistocene indicates that the intensity of Deep Western Boundary Current (DWBC) might have been enhanced during the glacial period as a result of increased production of Antarctic Bottom Water (AABW).

Pt/$LiNbO_3$/AIN/Si(100) 구조의 전기적 특성 (Electrical Properties of Pt/$LiNbO_3$/AIN/Si(100) structures)

  • 정순원;정상현;인용일;김광호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.58-61
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    • 2001
  • Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

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질화탄소막의 물리적 특성과 센서재료 응용에 관한 연구 (A Study on Physical Properties of Carbon Nitride Films and Application of Sensor Materials)

  • 김성엽;이지공;장중원;이성필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.247-248
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    • 2006
  • Carbon nitride films were evaluated that they had many advantages for miniature micro-humidity-sensors using the standard CMOS technology humidity sensing properties and CV characteristics of the carbon nitride films have been investigated for fabricating one chip HUSFET(Humidity Sensitive Field Effect Transistor) humidity sensors Carbon nitride films were deposited on silicon substrate with meshed electrodes by reactive RF magnetron sputtering system. The capacitor-type humidity sensor revealed good humidity-impedance characteristics with a wide range of relative humidity changes, decreasing $254k{\Omega}$ to $16k{\Omega}$ according to increase of relative humidity between 5% ~ 95% and the films were very stable on the Si wafer. These results reveal that $CN_x$ thin films can be used for Si based or HUSFET structure one chip micro-humidity sensors.

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EDUCATIONAL MANAGEMENT SCIENCE/OPERATIONS RESEARCH SOFTWARE: A SURVEY REVIEW

  • Kim, Eyong-B;Kang, Shin-Cheol
    • 한국산업정보학회논문지
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    • 제5권2호
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    • pp.70-77
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    • 2000
  • 본 연구의 목적은 MS/OR 과목을 가르치는 교수들이 계량 소프트웨어 패키지들에 대해 가지고 있는 인식을 조사하기 위한 것이다. 본 연구는 미국 대학에 근무하고 있는 MS/OR 담당교수들에 대한 설문을 중심으로 이루어졌다. 연구결과, 현재 MS/OR 과목을 담당하고 있는 교수들은 기존의 소프트웨어 패키지들이 계산속도, 제공되는 모형의 종류, 다룰 수 있는 문제의 크기 그리고 알고리즘의 정확성 등에 만족하고 있는 것으로 나타났다. 그러나, 이들 교수들은 기존 패키지들의 'what-if'분석 능력, 그래픽 기능, 모형 및 해(Solution)에 대한 설명기능, 출력물의 해독 용이성 그리고 사용의 용이성에 대해서는 불만을 가지고 있는 것으로 나타났다.

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$LiNbO_3$/AIN 구조를 이용한 MFIS 커패시터의 제작 및 특성 (Fabrications and properties of MFIS capacitor using $LiNbO_3$/AIN structure)

  • 이남열;정순원;김용성;김진규;정상현;김광호;유병곤;이원재;유인규
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.743-746
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    • 2000
  • Metal-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/$LiNbO_3$/Si structure were successfully fabricated. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 8.2. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$$1O^{-8}$A/$cm^2$ order at the electric field of 500kV/cm. The dielectric constant of $LiNbO_3$film on AIN/Si structure was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500kV/cm was about 5.6$\times$ $1O^{13}$ $\Omega$.cm.

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SPATIALLY RESOLVED KINEMATICS OF GAS AND STARS IN HIDDEN TYPE 1 AGNS

  • Son, Donghoon;Woo, Jong-Hak;Eun, Da-In;Cho, Hojin;Karouzos, Marios;Park, Songyeon
    • 천문학회지
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    • 제53권5호
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    • pp.103-115
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    • 2020
  • We analyze the spatially resolved kinematics of gas and stars for a sample of ten hidden type 1 AGNs in order to investigate the nature of their central sources and the scaling relation with host galaxy stellar velocity dispersion. We select our sample from a large number of hidden type 1 AGNs, which are identified based on the presence of a broad (full width at half maximum ≳1000 km s-1) component in the Hα line profile and which are frequently mis-classified as type 2 AGNs because AGN continuum and broad emission lines are weak or obscured in the optical spectral range. We used the Blue Channel Spectrograph at the 6.5-m Multiple Mirror Telescope to obtain long-slit data with a spatial scale of 0.3 arcsec pixel-1. We detected broad Hβ lines for only two targets; however, the presence of strong broad Hα lines indicates that the AGNs we selected are all low-luminosity type 1 AGNs. We measured the velocity, velocity dispersion, and flux of stellar continuum and gas emission lines (i.e., Hβ and [O III]) as a function of distance from the center. The spatially resolved gas kinematics traced by Hβ or [O III] are generally similar to the stellar kinematics except for the inner center, where signatures of gas outflows are detected. We compare the luminosity-weighted effective stellar velocity dispersions with the black hole masses and find that our hidden type 1 AGNs, which have relatively low back hole masses, follow the same scaling relation as reverberation-mapped type 1 AGN and more massive inactive galaxies.

서해안 서천군 당정리 일대에 분포하는 육상 고해안 퇴적물의 형성 과정과 형성 시기: 한반도 제4기 후기 지각운동의 양식과 변형률 산출을 위한 연구(III) (The Formative Processes and Ages of Paleo-coastal Sediments in Dangjeong-ri, Seocheon-gun in the Western Coast, South Korea: Evaluation of the Mode and Strain Rate of the Late Quaternary Tectonism (III))

  • 신재열;홍영민;홍성찬
    • 한국지형학회지
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    • 제27권1호
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    • pp.33-45
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    • 2020
  • A number of unconsolidated deposits, consisting of a layer of gravels and silt, are found in Dangjeong-ri, Seocheon-gun in the western coast. From below in the stratigraphic sequence, the gravel layer ranging up to a maximum thickness of about 2 meters is interpreted as being formed by fluvial processes of an old channel (Dangjeong S.), and the overlying silt or sandy silt layer of 2 to 3 thickness meters is assumed to be emerged paleo-tidal sediments which was deposited in low tidal-energy environments. As the results of rock surface IRSL datings, the depositional ages of gravels are confirmed as ca. 78,000 ~ 83,000 years BP, indicating that the layer was formed in response to a high-stand sea level of MIS 5a along the Dangjeongcheon estuary. It is presumed that the relative height of 4.5 meter between the altitude of the stream bed (9.5 m) and the altitude of the bedrock boundary in the gravel layer (14 m) indicates the uplift amount since deposition. Paleo-sedimentary environments and an altitude of paleo-shoreline in the study area will be discussed with additional age dating focused on the silt layer.

한국주식시장에서 주식규모별 분산비 특성에 관한 연구 -서브프라임 전.후의 비교를 중심으로- (The Characteristics of Korea Stock Market using Variance Ratio)

  • 서상구;박종해
    • 경영과정보연구
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    • 제26권
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    • pp.293-309
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    • 2008
  • This study examined the market efficiency of korea stock market by comparing variance ratios(VR) of stock groups which is sorted by market capitalization. We compute variance ratios of KOSPI large capitalization, midium capitalization, and small capitalization for 546 trading days from 2006/01/02 to 2008/04/15. For our study, we also use high frequency data that is; intra-day 1 minute data. The characteristics of variance ratios of stock groups by market capitalization as follows: From 1 to 5 minute interval, variance ratios of three stock group increase far from zero(0). The longer time interval, the more variance ratios decrease, but only large capitalization converge on around zero. This means that the market of large capitalization is more efficient compare to other stock groups. The entire sample period can be divided two sub-period because the impact of sub prime crisis arised from U.S.A. influences Korea stock market. Before sub prime crisis, the VRs of mid cap and small cap do not converge on around zero except large cap although the time interval is longer. After sub prime crisis, the VRs of three stock groups decrease when time interval is longer, but only large cap converge on around zero. We conclude that large cap is more efficient than other stock groups in Korea Stock Market.

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서해안 및 남해안의 해안단구 연구와 융기율 (Study on Coastal Terrace and Uplift Rate in the West and South Coasts of South Korea)

  • 박충선;김유홍;남욱현;이광률
    • 한국지형학회지
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    • 제25권4호
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    • pp.49-62
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    • 2018
  • This study tries to reveal uplift rates inferred from relative and absolute ages on coastal terrace in the West and South Coasts of South Korea. Uplift rate from relative ages on Pleistocene coastal terrace in the West Coast rangesfrom approximately 0.059 to 0.282 m/ky, while a range of approximately 0.020~0.385 m/ky is calculated from the South Coast, suggesting that the South Coast shows higher rate than the West Coast. Based on absolute ages on coastal terrace during MIS 5 in the South Coast, on the other hand, the uplift rates 1 and 4 have ranges of approximately 0.042~0.062 m/ky and 0.051~0.087 m/ky, respectively, indicating that uplift rate in the South Coast is one-third to one-fourth to that in the East Coast. No research on absolute ages in West Coast terrace and lack of relative and absolute ages in the West and South Coasts are considered as the limit in this study.

Dielectric Properties of $Ta_2O_{5-X}$ Thin Films with Buffer Layers

  • Kim, In-Sung;Song, Jae-Sung;Yun, Mun-Soo;Park, Chung-Hoo
    • KIEE International Transactions on Electrophysics and Applications
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    • 제12C권4호
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    • pp.208-213
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    • 2002
  • The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23~39) and high leakage current density(10$^{-3}$ ~10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (~15) and tow leakage current density(10$^{-9}$ ~10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.