• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.283-288
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• 2004

We have fabricated MIM capacitors for MMIC applications, with capacitances as high as 600pF/$\textrm{mm}^2$ and excellent electrical properties of the insulator layer. Silicon nitride thin film is the desirable material for MMIC capacitor fabrication. Standard MIM capacitance in MMIC is 300pF/$\textrm{mm}^2$ with an insulator layer thickness of more than 2000$\AA$. However, capacitors with thin insulator layers have breakdown voltages as low as 20V. We have deposited insulator layers by PECVD in our MIM structure with an air bridge between the top metal and the contact pad. The PECVD process was optimized for fabricating the desired capacitors to be used in MMIC. Silicon nitride(Si$_{x}$N$_{y}$) thin films of about 1000$\AA$ thick show capacitances of about 600pF/$\textrm{mm}^2$, and breakdown voltages above 70V at 100nA.A.A.

• ETRI Journal
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• v.31 no.6
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• pp.741-748
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• 2009

We present an analysis of microstrip coupled lines (MCLs) used to improve the stability of a 60 GHz narrowband amplifier. The circuit has a 4-stage structure implementing MCLs instead of metal-insulator-metal (MIM) capacitors for the unconditional stability of the amplifier and yield enhancement. The stability parameter, U, is used to compare the stability of MCLs with that of MIM capacitors. Experimental results show that MCLs are more stable than MIM capacitors with the same capacitances as MCLs because the parasitic parallel resistances of MCLs are lower than those of MIM capacitors. Moreover, the bandwidth of an amplifier using MCLs is narrower than one using MIM capacitors because the parasitic series inductances of MCLs are higher than those of MIM capacitors.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.2
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• pp.298-302
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• 2008

This study was carried out to evaluate brazing characteristics of the braze joint between superhard alloy particles and carbon steel. Two types of insert metals that made by mechanical alloying process were selected for this study. One is composed of Cu, Zn and Ag(MIM-1) and the other one is composed of Cu, Zn, Ag and Cd.(MIM-2) The chemical compositions of these insert metals were similar to AWS BAg-20 and BAg-2a system. And the commercial insert metals(CIM-1, CIM-2) were also evaluated for the comparative study. The characterization of the insert metals were conducted by wettability tests, shear tensile test and microstructural analyses. The results indicated that wettability tests displayed that MIM-1 and CIM-1 insert metals had the larger wetting angle than MIM-2 and CIM-2 and the wetting angle of the MIM-1 showed higher value than that of CIM-1. However these values are less than $25^{\circ}$ that is recommended for standard value for usual insert metals. The highest value of shear tensile tests was obtained from the brazed joint that made by MIN-1 and the value was $2.29{\times}10^2MPa$. This value is appeared to be higher or same as the commercial insert metals. The microstructures of the inserts metals were composed of Cu-rich proeutectic structure for matrix and Ag-rich eutectic structure. The braze joint between superhard alloy particles and carbon steel produced by the MIM-1(Ag-Cu-Zn) system showed sound joint showing stable microstructures. However there was also some porosities at the interface.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.8
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• pp.114-120
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• 2008

In this paper, we extract the parasitic elements of the metal-insulate-metal(MIM) capacitor using short-open calibration (SOC). The scattering matrixes of short, open, and MIM structures in strip lines are measured by full electro-magnetic (EM) simulator and vector network analyser. The full EM simulations are performed by finite element method (FEM) that was fitted three dimensional structure analysis. The electro-magnetic effects of MIM capacitor laminated in the multi-layered structures are proposed the II equivalent circuit with lumped elements, and the relations between the measured scattering parameters of the MIM structures and lumped elements in the circuits are shown by performing 2 port network analysis. The extracted lumped elements using the proposed SOC method are independent to frequencies.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1279-1282
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• 2005

Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. LB layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are $3{\sim}9$. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from -3 to +3[V].

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.47-53
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• 1997

We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.347-349
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• 1999

We have fabricated insulating thin films using p-hexadecoxyphenol(p-Hp) that was formed phenol-formaldehyde resin of crosslinked structure from reaction with formaldehyde by LB technique. For fabricated MIM device, the possibility for insulating layers of electronic were investigated by electrical properties of their LB films according to crosslinking of LB films current-voltage (I-V) properties and frequency-capacitance (C-F) characteristics. We have provided evidence for the high insulating performance of phenol-formaldehyde thin films by the LB method. Conductivity of their LB films was as follows: pure water > 1 % aq. Formaldehyde > heat treatment, in the current-voltage (I-V) characteristics. It is demonstrated that insulation properties of crosslinked p-HP LB films were improved. In capacitance-frequency properties, the heat-treated p-HP LB films for crosslinking showed a low relative dielectric constant.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.167-170
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• 2021

Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO₂, Al₂O₃, and Ta₂O₅ are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.209-212
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• 2001

High quality Taros thin films have been obtained from anodizing. The as-deposited amorphous films have excellent physical and electrical properties: refractive indices ~2.15, dielectric constants ~25, and leakage currents <10$^{-8}$ Ac $m^{-2}$ at 1MV $cm^{-1}$ , 700$\AA$ thickness. We fabricated a MIM element with theses T $a_2$ $O_{5}$ films which had perfect current-voltage symmetry characteristics using a new process technology which was post annealing of whole MIM element instead of conventional annealing conditions (top-electrode metals, annealing conditions) on the capacitor performances were extensively discussed throughout this work.k.

• Journal of the Optical Society of Korea
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• v.20 no.1
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• pp.180-187
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• 2016

The independent operation of a color filter for incident polarization is demonstrated using a guided-mode resonance (GMR) filter employing a metal-insulator-metal (MIM) waveguide. To achieve independent operation, a rectangular MIM grating is proposed as a wave-guide resonator. The design considerations are discussed and include how to determine the grating period and slit width. Power flow distribution is observed with slit width variation. Blue-green, green-red, and blue-red filters for corresponding x- and y-polarizations are demonstrated as application examples with numerical simulation with rectangle-shaped MIM grating. As a practical application, feasibility as a chromatic polarizer is discussed.