• Progress in Superconductivity
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• 제14권1호
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• 한국분말재료학회지
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• 제30권6호
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• pp.470-477
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• 2023

The effects of annealing on the microstructure and mechanical properties of Al-Zn-Mg-Cu-Si alloys fabricated by high-energy ball milling (HEBM) and spark plasma sintering (SPS) were investigated. The HEBM-free sintered alloy primarily contained Mg₂Si, Q-AlCuMgSi, and Si phases. Meanwhile, the HEBM-sintered alloy contains Mg-free Si and θ-Al₂Cu phases due to the formation of MgO, which causes Mg depletion in the Al matrix. Annealing without and with HEBM at 500℃ causes partial dissolution and coarsening of the Q-AlCuMgSi and Mg₂Si phases in the alloy and dissolution of the θ-Al₂Cu phase in the alloy, respectively. In both alloys, a thermally stable α-AlFeSi phase was formed after long-term heat treatment. The grain size of the sintered alloys with and without HEBM increased from 0.5 to 1.0 ㎛ and from 2.9 to 6.3 ㎛, respectively. The hardness of the sintered alloy increases after annealing for 1 h but decreases significantly after 24 h of annealing. Extending the annealing time to 168 h improved the hardness of the alloy without HEBM but had little effect on the alloy with HEBM. The relationship between the microstructural factors and the hardness of the sintered and annealed alloys is discussed.

• 한국주조공학회지
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• 제36권6호
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• pp.195-201
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• 2016

The effects of Mg addition on heat treatment and mechanical properties of A356 alloy were investigated. With increased amounts of Mg addition to A356 alloy, the grain size decreased and eutectic Si was refined. And, this process can improve the mechanical properties. Solid solution heat treatment causes the spheroidizing of eutectic Si. In this study, although eutectic Si was refined with Mg addition, solid solution time increased from 2 hours to 6 hours with Mg addition, and aging time also increased, from 4 hours to 8 hours. After heat treatment, Mg2Si remained in a formation of Chinese script. And, Chinese script Mg2Si formed with Mg addition caused a reduction of the elongation of the alloys according to the stress concentration.

• 자원리싸이클링
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• 제20권5호
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• pp.34-39
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• 2011

금속급 실리콘(MG-Si)에 Ca을 첨가하여 Ar 분위기 중의 1500$^{\circ}C$ 에서 용융하고, 10$^{\circ}C$/min의 속도로 상온까지 응고하여 왕수로 침출하였다. 본 연구에서는 금속급 실리콘 중의 Fe와 P의 제거에 미치는 Ca 첨가의 영향과 산 침출 조건의 영향에 대하여 조사하였다. Ca 첨가에 의해 MG-Si의 결정립계에 CaSi$_2$상이 생성되고, CaSi$_2$상 내에 FeSi$_2$상이 석출된 것을 확인하였다. 이러한 CaSi$_2$상 등의 생성에 의해 600~850${\mu}m$ 크기의 MG-Si에서도 30% 이상의 왕수를 이용한 침출로 Fe의 97%, P의 66%까지 제거할 수 있었다.

• 한국주조공학회지
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• 제32권6호
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• pp.269-275
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• 2012

Al-Mg-Si/Al hybrid alloy was prepared by Duo-casting and the mechanical behavior was evaluated based on their microstructure and mechanical properties. The hybrid aluminum alloy included the Al-Mg-Si alloy with fine eutectic structure, pure Al with the columnar and equiaxed crystals, and the macro-interface existing between Al-Mg-Si alloy and pure Al. The growth of columnar grains in pure Al occurred from the macro-interface. The tensile strength, 0.2% proof stress and bending strength of the hybrid aluminum alloy were almost similar to those of pure Al, and the elongation was much higher than the Al-Mg-Si alloy. The fracture of the hybrid alloy took place in pure Al side, indicating that the macro-interface was well bonded and the mechanical behavior strongly depends on the limited deformation in pure Al side.

• Korean Chemical Engineering Research
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• 제58권1호
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• pp.84-91
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• 2020

염기성 폴리올 및 식용유 정제에 사용하는 합성 규산마그네슘의 효율성은 정제능력과 여과속도를 통해 평가되며, 규산마그네슘의 입도 및 표면적에 따라 영향을 받는다. 본 연구에서는 합성변수인 반응온도, 주입속도, 주입순서(Si, Mg), Mg/Si의 반응몰비가 규산마그네슘의 입도에 미치는 영향을 조사하였다. 합성된 규산마그네슘은 합성공정, 분쇄공정, 정제공정으로 비교 분석되었다. 합성공정에서 반응 온도와 주입 속도는 규산마그네슘의 평균입도 변화에 영향을 주지않는 반면, Mg/Si의 반응몰비와 주입 순서는 평균입도 변화에 주된 요인으로 작용하였다. 합성 후 규산마그네슘의 평균입도는 반응몰비가 0.125에서 0.500로 증가할 때 Mg 주입 시 약 54.4 ㎛에서 63.1 ㎛로 약 8.7 ㎛ 증가하였고, Si 주입 시 47.3 ㎛에서 52.1 ㎛로 약 4.8 ㎛ 증가하였다. 주입 순서 별 평균입도를 비교해보면 Mg 주입 시 59.1 ㎛, Si 주입 시 48.4 ㎛로 약 10.7 ㎛의 평균입도 차이를 보였으며 Mg을 주입하는 조건에서 약 2배 빠른 수세여과속도가 관찰되었다. 즉, 입도가 증가함에 따라 여과 시간이 단축되고 수세여과속도 증가로 생산성 향상에 기여할 수 있었다. 여과 후 분리된 cake형태의 규산마그네슘은 건조과정을 통해 단단한 고형체가 되고 분쇄공정을 통해 분말형태의 흡착제로 사용된다. 건조된 규산마그네슘의 물리적 강도가 감소함에 따라 분말의 평균입도가 감소하고, 이 강도는 반응몰비에 영향을 받는 것을 확인하였다. Mg주입 시 Mg/Si의 반응몰비가 증가함에 따라 규산마그네슘의 물리적 강도가 감소하여 분쇄 후 평균입도가 합성 후 평균입도에 비해 약 40% 감소하는 것을 관찰하였다. 이러한 강도감소는 평균입도 감소와 분쇄 후 미분량의 증가로 정제능력의 향상을 가져왔지만 정제여과속도 감소를 가져왔다. Mg 주입 시 반응몰비가 0.125에서 0.5로 증가할 동안 정제능력은 약 1.3 배가 증가하였으나 정제여과속도는 약 1.5 배가 감소하였다. 따라서 규산마그네슘의 생산성 향상을 위해서는 Mg/Si의 반응몰비를 증가시켜야 하지만, 폴리올의 정제여과속도를 증가시키기 위해선 반응몰비를 감소시켜야 한다. 규산마그네슘의 합성변수 중 주입순서와 Mg/Si의 반응몰비는 합성 후 평균입도와 분쇄 후 평균입도 및 미분량 변화에 영향을 주는 주요인자로 생산성 및 정제능력을 결정짓는 중요한 합성변수이다.

• Korean Chemical Engineering Research
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• 제44권3호
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• pp.284-288
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• 2006

분무열분해법을 이용하여$(Ca,Sr)_{2-y}MgSi_2O_7:Eu^{2+}{_y}$ 형광체 분말을 제조하고 $Eu^{2+}$의 농도, 후열처리온도 변화 및 Ca/Sr 비에 따른 발광특성을 조사하였다. 또한, Ca/Sr의 비를 변화시켜 발광특성의 변화를 관찰하였다. $Ca_2MgSi_2O_7$나 $Sr_2MgSi_2O_7$ 분말 모두 $1,000^{\circ}C$ 이상의 온도에서 열처리를 했을 때 순수한 정방정계 상이 제조되었다. $Ca_2MgSi_2O_7:Eu^{2+}{_y}$ 녹색 형광체는 $Eu^{2+}(y)$의 농도가 5 mol％, 후열처리 온도가 $1,250^{\circ}C$ 일 때 가장 높은 발광 강도는 보였다. ${(Ca_{1-x},Sr_x)}_{1.95}MgSi_2O_7:{Eu^{2+}}_{0.05}$의 발광 파장은 Sr의 농도가 증가함에 따른 결정장 감소로 인해 524nm에서 456nm로 점진적으로 blue shift 되었다. $Sr_2MgSi_2O_7:Eu^{2+}$는 Sr 자리에 약 10 mol％ Ca를 치환시킴으로써 청색 형광체의 발광 강도는 크게 향상되었다. 제조된 분말들은 치밀하지 못하고 다공성 구조를 가져 후열처리 전에는 구형을 유지하였으나 열처리($900{\sim}1,300^{\circ}C$) 후에는 구형의 형상을 잃고 입자들 간의 응집이 발생하였다.

• 한국세라믹학회지
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• 제43권7호
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• pp.427-432
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• 2006

The preparation of SiC powder by SHS in the system of $SiO_2-Mg-C$ was investigated in this study. The effects of various processing parameters such as the initial pressure of inert gas in reactor, the content of Mg and C in mixture and the size of $SiO_2$ particles on the synthesis of SiC by SHS methode were investigated. The minimum initial pressure of inert gas in reactor for SHS reaction in this system was 5 atm, and as the pressure increased, and the concentration of unreacted Mg decreased. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure SiC was $SiO_2+2.5Mg+1.2C$. SiC powder synthesized in this condition had a mixture of ${\alpha}-SiC\;and\;{\beta}-SiC$ with an irregular shape and the particle size of $0.5{\sim}0.8{\mu}m$.

• 한국재료학회지
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• 제19권10호
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• pp.550-554
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• 2009

Unreported dielectrics based on the binary system of MgO-SiO$_2$ were investigated as potential candidates for microwave dielectric applications, particularly those demanding a high fired density and high quality factors. Extensive dielectric compositions having different molar ratios of MgO to SiO$_2$, such as 2:1, 3:1, 4:1, and 5:1, were prepared by conventional solid state reactions between MgO and SiO$_2$. 1 mol% of V$_2$O$_5$ was added to aid sintering for improved densification. The dielectric compositions were found to consist of two distinguishable phases of Mg$_2$SiO$_4$ and MgO beyond the 2:1 compositional ratio, which determined the final physical and dielectric properties of the corresponding composite samples. The increase of the ratio of MgO to SiO$_2$ tended to improve fired density and quality factor (Q) without increasing grain size. As a promising composition, the 5MgO.SiO$_2$ sample sintered at 1400 $^{\circ}C$ exhibited a low dielectric constant of 7.9 and a high Q $\times$ f (frequency) value of $\sim$99,600 at 13.7 GHz.

• 동력기계공학회지
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• 제5권4호
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• pp.74-81
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• 2001

The infiltration behavior of molten Al-alloy, microstructures, hardness, and the interfacial reactions of $SiC_p/Al$ composites fabricated by the pressureless infiltration technique were investigated. It was made clear that both the weight fraction of SiC reinforcement and additive Mg content considerably influenced on the infiltration behavior of the molten Al-alloy matrix. Complete infiltration of molten Al-alloy achieved under the conditions that weight fraction of SiC content is more than 30wt%, and additive Mg content is more than 9wt%. Interfacial region of Al-alloy matrix and SiC reinforcement phase, $Mg_2Si$ was formed by the reaction between Mg and SiC. Another reaction product AlN was also formed by the reaction between Al-alloy matrix and gas atmosphere nitrogen.