• Title/Summary/Keyword: MFDM(Metal-Dielectric-Ferroelectric-Metal)

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A Hystesis Loop Modeling of Ferroelectric Thin Film Using Numerical Integration Method (수치적분을 이용한 강유전체의 이력곡선 모델링)

  • 강성준;정양희;유일현
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.696-699
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    • 2003
  • In this study, we suggested the model to precisely evaluate the ferroelectric hysteresis loop, using the modified Sawyer-Tower circuit and the ferroelectric capacitor with a MDFM(Metal-Dielectric-ferroelectric-Metal) structure. The mathematical expression of dipole polarization is applied to the numerical integration algorithm, and the fatigue property can be considered including the dielectric layer between ferroelectrics and bottom electrode. The validity of our model is proved comparing the estimated value of our model and the measured results of PLT(10) thin film.

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