• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.395-399
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• 1992

In0.5Al0.5As와 같은 조성을 갖는 합금인 n=1~4인 (InAs)n(AlAs)n 형태의 완벽한 층 상구조의 단주기 초격자를 MBE 방법으로 성장하였다. 저온 PL 측정을 통하여 광학적 특성 을 조사하였으며, Raman 산란실험을 통하여 구조적 특성을 조사하였다. X선화질 실험을 통하여 홀수 번호의 회적을 관측할 수 있었는데 이것은 초격자에 의한 새로운 주기의 형성 을 직접적으로 보여 주는 것이다.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.144-145
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• 2003

VCSEL은 우수한 소자 특성과 표면 발광 구조가 갖는 여러 가지 장점들로 인하여 병렬 광연결과 근거리 광섬유 통신에서 이상적인 광원으로 인정받고 있다. 특히 산화막 구경을 갖는 VCSEL은 이득영역 근처에서 횡 방향으로 광학적, 전기적 제한을 가함으로써 낮은 문턱전류와 높은 전력변환 효율을 갖기 때문에 현재까지 많은 연구가 진행되어 왔다. 본 논문에서는 in-situ 광 반사법을 이용한 VCSEL의 MBE 성장과 1■10 산화막 구경 VCSEL 어레이의 제작공정, 그리고 발진특성에 대하여 논하고자 한다. (중략)

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.378-385
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• 1995

The growth processes of improved methods for MBE, LPE and $\mu$ - PD methods are discussed taking the oxide materials, especially those of Bi - Sr - Ca - Cu family $LiNbO_3$ and $K_3Li_2Nb_5O_{15}$ family as examples. It is suggested that the crystal growth far from equilibr iu m including composition homogeneity has been achieved to satisfy in understanding and controlling the atomic interfaces.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2006.06a
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• pp.289-290
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• 2006

We report a study of Zn(S)Se/GaAs heterojunction solar cells grown by molecular beam epitaxy (MBE). Zn(S)Se/GaAs heterostructures prepared under different conditions were characterized in-situ by reflection high-energy electron diffraction (RHEED). Structural and electrical properties were investigated with double crystal X-ray diffraction and current-voltage characteristics, respectively. The fabricated $n-ZnS_{0.07}Se_{0.93}/p-GaAs$ solar cell (SC #2) exhibited open circuit voltage($V_{oc}$) of 0.37 V, short circuit current($I_{sc}$) of $1.7{\times}10^{-2}$ mA, fill factor of 0.62 and conversion efficiency of 7.8 % under 38.5 $mW/cm^2$ illumination.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.134-138
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• 1992

The GaAs/AlAs double barrier structures was grown by MBE(Mo1ecular Beam Epitaxy). Mesa diode was fabricated and I-V characteristics of the diode were measured by semiconductor parameter analyser at room temperature. TEM pictures show the double barrier structure with abrupt interface. PVCR(Peak to Valley Current Ratio) proves to be independent of barrier thickness. These results show that increase in barrier thickness leads to larger valley current by non-resonant tunneling.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.42-42
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.22-23
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.76-76
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.100-100
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.246-246
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• 2005