• JSTS:Journal of Semiconductor Technology and Science
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• 제16권4호
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• pp.443-450
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• 2016

The linearization technique for low noise amplifier (LNA) has been implemented in standard $0.18-{\mu}m$ BiCMOS process. The MOS-BJT derivative superposition (MBDS) technique exploits a parallel LC tank in the emitter of bipolar transistor to reduce the second-order non-linear coefficient ($g_{m2}$) which limits the enhancement of linearity performance. Two feedback capacitances are used in parallel with the base-collector and gate-drain capacitances to adjust the phase of third-order non-linear coefficients of bipolar and MOS transistors to improve the linearity characteristics. The MBDS technique is also employed cascode configuration to further reduce the second-order nonlinear coefficient. The proposed LNA exhibits gain of 9.3 dB and noise figure (NF) of 2.3 dB at 2 GHz. The excellent IIP3 of 20 dBm and low-power power consumption of 5.14 mW at the power supply of 1 V are achieved. The input return loss ($S_{11}$) and output return loss ($S_{22}$) are kept below - 10 dB and -15 dB, respectively. The reverse isolation ($S_{12}$) is better than -50 dB.