• Journal of the Institute of Electronics and Information Engineers
• /
• v.50 no.2
• /
• pp.203-209
• /
• 2013

Digital Radiography (DR) has improved a quality of resolution based on a wide dynamic range, high detective quantum efficiency (DQE), and modulation transfer function (MTF), compared with film/screen(F/s). Unlike expectation that a low level of radiation can be used in examination, high level of signal to noise ratio(SNR) due to over-exposure caused increase of exposed dose to patients. Also, the auto exposure control (AEC) using Kilovolage(kVp) in F/S can cause over-exposure. Hence, in this study, we proposed a proper method for using DR, in which effect of tubing Kilovolage on device's image, DR MTF measurement with changes of tubing current (mA), and the quantitative evaluation of skull phantom captured images' PSNR were evaluated. Changes of contrast with tubing Kilovolage can be improved by retouching, and MTF changes according to tubing current(1.41~1.39 lp/mm in 50% area, and 3.19~2.8 lp/mm in 10% area) does not influence on resolution of image. As a result, high tubing Kilovoltage, and tubing current will be suitable to use of DR.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.292-292
• /
• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Journal of the Earthquake Engineering Society of Korea
• /
• v.9 no.2 s.42
• /
• pp.37-46
• /
• 2005

To date, many viable smart base isolation systems have been proposed and investigated. In this study, a novel friction pendulum system (FPS) and an MR damper are employed as the isolator and supplemental damping device, respectively, of the smart base isolation system. A fuzzy logic controller (FLC) is used to modulate the MR damper because the FLC has an inherent robustness and ability to handle non linearities and uncertainties. A genetic algorithm (GA) is used for optimization of the FLC. The main purpose of employing a GA is to determine appropriate fuzzy control rules as well to adjust parameters of the membership functions. To this end, a GA with a local improvement mechanism is applied. This method is efficient in improving local portions of chromosomes. Neuro fuzzy models are used to represent dynamic behavior of the MR damper and FPS. Effectiveness of the proposed method for optimal design of the FLC is judged based on computed responses to several historical earthquakes. It has been shown that the proposed method can find optimal fuzzy rules and the GA optimized FLC outperforms not only a passive control strategy but also a human designed FLC and a conventional semi active control algorithm.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.599-604
• /
• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.