• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.91-96
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• 2005

We report the efficient red light-emitting diodes based on the fluorescent dye 4-(dicyanomethylene)-2-i-propyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTI) and 5,6,11,12-tetraphenyl naphthacene (rubrene) codoped in the tris(8-hydroxyquinoline)aluminum $(Alq_3)$. Luminance efficiency of 2.2 cd/A with a Commission International De L'Eclairage (CIE) chromaticity coordinate of x, y = (0.640, 0:350) are achieved at the driving current density of $20\;mA/cm^2$. Adding the rubrene to the DCJTI in tris(8-hydroxyquinoline)aluminum $(Alq_3)$, the red color purity and luminance efficiency improved comparing to the DCJTI only doped devices because the rubrene molecules assist the polarization effect of DCJTI by molecular interaction and enhance the energy transfer from $(Alq_3)$ to DCJTI.

• 멤브레인
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• 제2권2호
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• pp.104-111
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• 1992

A curved channel duct is designed, built and used specifically to produce Dean vortices as a result of flow around a $180^{\circ}C$ curve. We present evidence using optical reflection of the existmace of the vortices in the curved section and following flat section. Also, three different feed soludons(DI water, a monodispersed styrene-divinyl-benzene latex particle suspension and a yeast suspension) were used to determine the effectiveness of Dean instabilities to destabilize polarization layers. For each suspension, the flux data were compared as a function of time for flow conditions with and without Dean vortices, for a $0.2{\mu}m$ microfiltration membrane. Any permeation flux improvement was not sustained for $2.0De_c$ due to the vortex-decay in the flat section after the curved channel, but a 15~30% permeation improvement was obtained for $3.8De_c$.

• Journal of Electrochemical Science and Technology
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• 제12권3호
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• pp.365-376
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• 2021

Two arylamino substituted mercaptoimidazole derivatives namely 4,5-dimethyl-1-(phenylamino)-1H-imidazole-2(3H)-thione (I1) and 4,5- dimethyl-1-((p-chlorophenyl)amino)- 1H-imidazole-2(3H)-thione (I2) were synthesized and investigated as corrosion inhibitors for carbon steel in 0.5 M HCl solution by means of electrochemical impedance spectroscopy (EIS), potentiodynamic polarization, ATR-FTIR spectroscopy and SEM. The results showed that the investigated mercaptoimidazole derivatives act as mixed type inhibitors and inhibition efficiency follows the I2>I1 order. Adsorption of inhibitors on metal surface was found to obey the Langmuir adsorption isotherm. Thermodynamic parameters revealed that adsorption of the inhibitors has both physisorption and chemisorption adsorption mechanism. Electrochemical test results were supported by quantum chemical parameters obtained from DFT calculations.

• 한국광학회지
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• 제31권5호
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• pp.223-230
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• 2020

본 논문에서는 전광섬유 master oscillator power amplifier (MOPA) 구조의 이터븀(ytterbium) 첨가 편광유지 광섬유 레이저의 유도 브릴루앙 산란 및 모드 불안정 특성에 대해 연구하였다. 이터븀 첨가 광섬유 및 신호 광원의 종류에 따라 레이저 출력 및 역반사 스펙트럼을 측정하여 광섬유 레이저의 출력 증폭 한계를 분석하였다. 레이저 구조의 최적화를 통해 단일모드 빔 품질을 갖는 전광섬유 고출력 편광유지 광섬유 레이저를 구현하였다. Pseudo-random binary sequence (PRBS) 신호에 의해 위상변조된 10 GHz의 선폭을 갖는 신호 광원을 적용하여 1.5 kW의 출력을 얻었다. 최대 출력에서 1.15의 빔 품질을 가지며, 17 dB 이상의 편광소광률 특성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 대한금속재료학회지
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• 제50권5호
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• pp.395-400
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• 2012

In this study, we have investigated the surface morphology of hydroxyapatite (HA) coated Ti alloy surface using pulsed laser plating. The HA (tooth ash) films were grown by pulsed KrF excimer laser, film surfaces were analyzed for topology, chemical composition, crystal structure and electrochemical behavior. The Ti-6Al-4V alloy showed ${\alpha}$ and ${\beta}$ phase, Cp-Ti showed ${\alpha}$ phase and the HA coated surface showed HA and Ti alloy peaks. The HA coating layer was formed with $1-2{\mu}m$ droplets and grain-like particles, particles which were smaller than the HA target particle, and the composition of the HA coatings were composed of Ca and P. From the electrochemical test, the pitting potential (1580 mV) of HA coated Ti-6Al-4V alloy was higher than those of Cp-Ti (1060 mV) and HA coated Cp-Ti (1350 mV). The HA coated samples showed a lower current density than non-HA coated samples, whereas, the polarization resistance of HA coated samples showed a high value compared to non-HA coated samples.

• 한국표면공학회지
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• 제33권2호
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• pp.93-100
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• 2000

Effects of Ti content and Ti underlayer on the pitting behavior of TiN coated AISI 304 stainless steel have been studied. The stainless steel containing 0.1~1.0wt% Ti were melted with a vacuum melting furnace and heat treated at $1050^{\circ}C$ for 1hr for solutionization. The specimen were coated with l$\mu\textrm{m}$ and 2$\mu\textrm{m}$ thickness of Ti and TiN by E-beam PVD method. The microstructure and phase analysis were conducted by using XRD, XPS and SEM with these specimen. XRD patterns shows that in TiN single-layer only the TiN (111) Peak is major and the other peaks are very weak, but in Ti/TiN double-layer TiN (220) and TiN (200) peaks are developed. It is observed that the surface of coating is covered with titanium oxide (TiO$_2$) and titanium oxynitride ($TiO_2$N) as well as TiN. Corrosion potential on the anodic polarization curve measured in HCl solution increase in proportion to the Ti content of substrate and by a presence of the Ti underlayer, whereas corrosion and passivation current densities are not affected by either of them. The number and size of pits decrease with increasing Ti content and a presence of the coated Ti film as underlayer in the TiN coated stainless steel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.192-193
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• 2006

A 16Mb ITIC FeRAM device was fabricated with BLT capacitors. The average value of the switchable 2 polarization obtained m the 32k-array (unit capacitor size: 068 ${mu}m^2$) capacitors was about 16 ${\mu}C/cm^2$ at 3V and the uniformity within an 8-inch wafer was about 2.8%. But a lot of cells were failed randomly during the measuring the bit-line signal of each cell. It was revealed that the Grain size and orientation of the BLT thin film were severely non-uniform. Therefore, the uniformity of the grain size and orientation was improved by changing the process conditions of post heat treatment. The temperature of nucleation step was the very effective on varying the microstructure of the BLT thin film. The optimized temperature of the nucleation step was $560^{\circ}C$.

• 마이크로전자및패키징학회지
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• 제9권1호
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• pp.29-33
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• 2002

The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.

• 천문학회지
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• 제56권2호
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• pp.293-299
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• 2023

The Wide-Angle Polarimetric Camera (PolCam) is installed on the Korea's lunar orbiter, Danuri, which launched on August 5, 2022. The mission objectives of PolCam are to construct photometric maps at a wavelength of 336 nm and polarization maps at 461 and 748 nm, with a phase angle range of 0°-135° and a spatial resolution of less than 100 m. PolCam is an imager using the push-broom method and has two cameras, Cam 1 and Cam 2, with a viewing angle of 45° to the right and left of the spacecraft's direction of orbit. We conducted performance tests in a laboratory setting before installing PolCam's flight model on the spacecraft. We analyzed the CCD's dark current, flat-field frame, spot size, and light flux. The dark current was obtained during thermal / vacuum test with various temperatures and the flat-field frame data was also obtained with an integrating sphere and tungsten light bulb. We describe the calibration method and results in this study.