• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.13-16
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• 2008

Solid oxide fuel cell(SOFC) is an electrochemical energy conversion system with high efficiency and low-emission of pollution. In order to reduce the operating temperature of SOFC system under $800^{\circ}C$, the thickness reduction of YSZ electrolyte to be as thin as possible, e.g., less than 10 ${\mu}m$ are considered with the microstructure control and optimum design of unit cell. Methods for reducing the thickness of YSZ electrolyte have been investigated in coin cell. Moreover, a large unit cell($8cm{\times}8cm$) for SOFC was fabricated using an anode-supported electrolyte assembly with a thinner electrolyte layer, which was prepared by a tape casting method with a co-sintering technique. we studied the design factors such as active layer, electrolyte thickness, cathode composition, etc,. by the coin type of unit cell ahead of the fabrication process of a large unit cell and also reviewed about the evaluation technique of a large size unit cell such as interconnect design, sealing materials and current collector and so forth. Electrochemical evaluations of the unit cells, including measurements such as power density and impedance, were performed and analyzed. Maximum power density and polarization impedance of coin cell were 0.34W/$cm^2$ and $0.45{\Omega}cm^2$ at $800^{\circ}C$, respectively. However, Maxium power density of a large unit cell($5cm{\times}5cm$) decreased to 0.21W/$cm^2$ at $800^{\circ}C$ due to the increase of ohmic resistance. However, It was found that the potential value of a large unit cell loaded by 0.22A/$cm^2$ showed 0.76V at 100hrs without the degradation of unit cell.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.315-320
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• 2000

We have investigated the crystal structure and electrical properties of Pt/SBT/$ZrO_2$/Si (MFIS) and Pt/SBT/Si (MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$ZrO_2$/Si structure had larger grain than that of SBT/Si structure. $ZrO_2$ film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier by the analysis of AES. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$ZrO_2$/Pt/$SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-volt-age characteristics, the memory windows of Pt/SBT (210 nm)/$ZrO_2$ (28 nm)/Si structure were in the range of 1~l.5 V at the applied voltage of 4~6 V. The current densities of Pt/SBT/ZrO$_2$/Si with as -deposited Pt electrode and annealed at $800^{\circ}C$ in $O_2$ambient were $8\times10^{-8} A/\textrm{cm}^2$ and $4\times10^{-8}A/\textrm{cm}^2$ , respectively.

• Journal of the Korean Chemical Society
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• v.36 no.1
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• pp.3-15
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• 1992

Electronic structures and reactivities of the chromium, molybdenum, and tungsten carbene complexes, $(CO)_5Cr=CCHCH_2(XCH_3)\;,\;(CO)_5Mo=CCHCH_2(XCH_3)\;, and\;(CO)_5W=CCHCH_2(XCH_3)$, are studied by means of Extended Huckel calculations. The origin of the M=Ccarbene double bond is clarified from the diagram of the orbital correlation with the fragment orbitals. The ${\sigma}$ bond of the M=Ccarbene double bond is formed by the electron transfer interaction from the HOMO of the carbene to the LUMO of the $(CO)_5M$. The ${\pi}$ bond is formed through the back-transfer of electrons from one of the degenerated d${\pi}$ orbitals to the LUMO of the carbene. The polarization of charge of the M=Ccarbene bond is calculated to be M=Ccarbene for Mo, and W carbenes. The chemical and physical properties of these complexes are resulted from an appreciable positive charge on the carbene carbon. The electrophilic reactivity of the carbene carbon is not charge controlled, but is controlled by the frontier orbital, LUMO.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.4
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• pp.261-271
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• 2008

Holographic volume grating couplers (VGCs) are become increasingly attractive device for the application of optical interconnects because of their higher preferential coupling, dry fabrication processing, compact, and low cost. In this paper, the analysis, design, and implementation of the waveguide-imbedded input-output VGC with $45^{\circ}$ grating slant angle using holographic photopolymer(Dupont HRF600-20) for guided-wave optical interconnection applications, are presented. To show the usefulness of the proposed VGC, we fabricated the VGCs operating at 632.8nm and 1550nm wavelengths and its results are presented. The measured input coupling efficiency of the single VGC with $0.5{\mu}m$ grating period at 632.8nm wavelength is above 86.6% for TE-polarization. The input coupling efficiency of the $1\times2$ VGC with $0.73068{\mu}m$ grating period at 1550nm wavelength is about 90.8%.

• Journal of Energy Engineering
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• v.7 no.1
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• pp.35-43
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• 1998

Electrodes using for the anode electrode of direct methanol fuel cell with Pt/C and Pt/Ru/C catalyst were prepared and characterized by SEM, TEM, thermal analysis and electrochemical analysis. The half cell tests were carried out with 1 M $H_2SO_4$ electrolyte and 1 M $CH_3OH$ in order to evaluate the electrode performance. The employed electrochemical methods were cyclic vol-tammetry and potentiodynamic polarization experiments. It was found that 20 w% polytetrafluoroethylene (PTFE) content in catalyst showed the best performance due to the best platinum utilization on PTFE-containing catalyst layer. It was found that Pt/Ru/C binary catalyst inhibited the poisoning of anode electrode showing improved performance compared to the Pt/C catalyst by the adsorption of oxygen containing species on the electrode surface at same time. The apparent activation energy for methanol oxidation on the Pt/Ru/C and Pt/C catalyst layer was 11.60 kJ/mol and 26.85 kJ/mol, respectively.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1240_1241
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• 2009

In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.866-870
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• 1998

PLZT thin films were fabricated with different Zr/Ti ratios by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Si substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, $O_2$ pressure 200m Torr. 2/55/45 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$\ulcorner=1550 and dielectric loss was 0.03 at 10kHz. At 2/70/30 PLZT thin film, coercive field and remnant polarization was respectively 19[kV/cm], 8[$\mu$C/$\textrm{cm}^2$]. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.74-77
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• 2000

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.194-195
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• 2005

(100-x)Zn xMg alloy films are prepared onto cold-rolled steel substrates; where x ranged from 0 to about 38 atomic %. The alloy films show microcrystalline and grain structures respectively, according to preparation conditions such as composition ratio of zinc and magnesium or gas pressures etc.. And X-ray diffraction analysis indicates not only the presence of Zn-Mg thin films with forced solid solution but also the one of $MgZn_2$ alloy films partly. In addition the influence of Mg/Zn composition ratio and morphology of the Zn-Mg alloy films on corrosion behavior is evaluated by electro-chemical anodic polarization tests in deaerated 3% NaCl solution. From this experimental results, all the prepared Zn-Mg alloy films showed obviously good corrosion resistance to compare with 99.99% Zn and 99.99% Mg Ingots for evaporation metal. It is thought that the Zn-Mg films with effective forced solid solution prepared by plasma enhanced PVD method, produces smaller and denser grain structure so that may improve the formation of homogeneous passive layer in corrosion environment.