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Synthesis and Magnetic Relaxation Properties of Paramagnetic Gd-complexes of New DTPA-bis-amides. The X-ray Crystal Structure of [Gd(L)(H2O)]·3H2O (L = DTPA-bis(4-carboxylicphenyl)amide)

  • Dutta, Sujit;Kim, Suk-Kyung;Lee, Eun-Jung;Kim, Tae-Jeong;Kang, Duk-Sik;Chang, Yong-min;Kang, Sang-Ook;Han, Won-Sik
    • Bulletin of the Korean Chemical Society
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    • 제27권7호
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    • pp.1038-1042
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    • 2006
  • A new type of DTPA-bis-amides (L1-L4) and their Gd(III)-complexes of the type $[Gd(L)(H_2O)]{\cdot}nH_2O$ (5: L1; 6: L2; 7: L3; 8: L4) have been prepared and characterized by analytical and spectroscopic techniques. The X-ray crystal structure of 8 has been determined for structural confirmation. The coordination geometry adopts a tricapped trigonal prism geometry with L4 acting as a chelate octadentate and a water molecule in the coordination sphere. Crystals are monoclinic, $P2_1$, a = 14.468(3), b = 19.235(4), c = 13.527(2) $\AA$ $\beta$ = $107.245(3)^{\circ}$, V = 3595.2(11) $\AA^3$, Z = 4, $D_{calc}$ = 1.570. Significant increases in relaxivities are observed with 6 and 7 as compared with that of $Omniscan^{(R)}$, a commercial MR agent: R1 = 12.46 $mM^{-1}\;s^{-1}$, R2 = 8.76 $mM^{-1}\;s^{-1}$ for 6; R1 = 12.77 nm-1 s-1, R2 = 7.60 mM-1 s-1 for 7; R1 = 4.9 $mM^{-1}\;s^{-1}$, R2 = 4.8 $mm^{-1}\;s^{-1}$ for $Omniscan^{(R)}$. In the case of 5, however, both R1 and R2 are found to be lower to show 2.09 $mM^{-1}\;s^{-1}$, and 1.82 $mM^{-1}\;s^{-1}$, respectively.

$CdS/CuInSe_2$태양전지의 Window Layer로 쓰이는 CdS박막의 진공증착법에 따른 전기적.광학적 성질 (Electrical and Optical Properties of Vacuum-Evaporated CdS Films for the Window Layer of $CdS/CuInSe_2$ Solar Cells.)

  • 남희동;이병하;박성
    • 한국결정학회지
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    • 제8권2호
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    • pp.105-110
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    • 1997
  • CdS/CuInSe2 태양전지에서 창측재료로 1μm 두께의 CdS박막을 1x10-3mTorr의 진공하에서 CdS source 온도를 800-1100'C로 하고 기판의 온도를 50-200℃로하여 진공증차겁으로 제조하였다. 증착된 CdS박막의 구조적, 전기적, 광학적 특성조사는 x-ray diffractometer(XRD), scanning electron microscope(SEM), 전기비저항 측정, Hall measurement 그리고 optical transmission spectra로 행하였고, 각막들의 성분분석은 energy dispersive analysis of X-ray (EDAX)를 가하나, 광투과도는 감소하였다. 이때 증착된 CdS 박막들은 모두 hexagonal 구조를 가지고 있었으며, 결정성은 기판유리를 딸 (002)면으로 형성되었다. CdS Source 온도가 1000℃에서 증착된 CdS 박막이 0.9(S/cm)의 가장 높은 전기 전도도를 나타내었다. 또한 기판온도를 100'C로 제조한 CdS 박막이 전기비저항은 40(Ω,cm)이었고 광투과도는 80% 이상의 값을 나타내어 CdS/CuInSe2 태양전지의 창측재료로 적합했다.

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다결정${(Fe,In,Eu)}_2O_3$계의 자기적 성질에 관한 연구 (A Study on the Magnetic Properties of Polycrystailine${(Fe,In,Eu)}_2O_3$)

  • 김정기;서정철;한은주;홍양기
    • 한국자기학회지
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    • 제1권1호
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    • pp.1-5
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    • 1991
  • 다결정${(Fe_{2}O_{3})}_{1-x-y}{(In_{2}O_{3})}_{x}{(Eu_{2}O_{3})}_{y}$(x=0.01, y=0.02과 x=0.02, y=0.03)의 자기적 성질을 X선 회절, $M\"{o}ssbauer$ 효과 방법과 자기이력 측정에 의해서 연구하였다. X선 회절결과는 이들 시료의 결정구조는 $\alpha-Fe_{2}O_{3}$와 같음을 보인다. 사중극자 분열과 평균 반폭치 분석으로부터 x=0.01과 y=0.02인 시료는 Morin 전이를 보이며, x=0.02와 y=0.03시료에서 반 강자성 벡타와 결정축[111]사이의 각은 온도의 증가에 따라 약 $35^{\circ}$로부터 (111) 평면에 놓이기 까지 변한다. 초미세 자기장의 온도 의존성은 스핀파 이론을 써서 분석하였다. 상온에서의 이성질체 이동값은 약 0.35mm/s로 이는 시료내의 철의 이온값은 $3^{+}$임을 의미하는 것이다. 이성질체 이동의 온도의존성은 Delbye모형을 써서 분석하였다.

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ON THE MODULAR FUNCTION $j_4$ OF LEVEL 4

  • Kim, Chang-Heon;Koo, Ja-Kyung
    • 대한수학회지
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    • 제35권4호
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    • pp.903-931
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    • 1998
  • Since the modular curves X(N) = $\Gamma$(N)\(equation omitted)* (N =1,2,3) have genus 0, we have field isomorphisms K(X(l))(equation omitted)C(J), K(X(2))(equation omitted)(λ) and K(X(3))(equation omitted)( $j_3$) where J, λ are the classical modular functions of level 1 and 2, and $j_3$ can be represented as the quotient of reduced Eisenstein series. When N = 4, we see from the genus formula that the curve X(4) is of genus 0 too. Thus the field K(X(4)) is a rational function field over C. We find such a field generator $j_4$(z) = x(z)/y(z) (x(z) = $\theta$$_3$((equation omitted)), y(z) = $\theta$$_4$((equation omitted)) Jacobi theta functions). We also investigate the structures of the spaces $M_{k}$($\Gamma$(4)), $S_{k}$($\Gamma$(4)), M(equation omitted)((equation omitted)(4)) and S(equation omitted)((equation omitted)(4)) in terms of x(z) and y(z). As its application, we apply the above results to quadratic forms.rms.

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$Hg_{1-x}Cd_{x}$Te photovoltaic 대형 적외선 감지 소자의 제작 (Fabrication of a Large-Area $Hg_{1-x}Cd_{x}$Te Photovoltaic Infrared Detector)

  • 정한;김관;이희철;김재묵
    • 전자공학회논문지A
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    • 제31A권2호
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    • pp.88-93
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    • 1994
  • We fabricated a large-scale photovoltaic device for detecting-3-5$\mu$m IR, by forming of n$^{+}$-p junction in the $Hg_{1-x}Cd_{x}$Te (MCT) layer which was grown by LPE on CdTe substrate. The composition x of the MCT epitaxial layer was 0.295 and the hole concentration was 1.3${\times}10^{13}/cm^{4}$. The n$^{+}$-p junction was formed by B+ implantation at 100 keV with a does 3${\times}10^{11}/cm^{2}. The n$^{+}$ region has a circular shape with 2.68mm diameter. The vacuum-evaporated ZnS with resistivity of 2${\times}10^{4}{\Omega}$cm is used as an insulating layer over the epitaxial layer. ZnS plays the role of the anti-reflection coating transmitting more than 90% of 3~5$\mu$m IR. For ohmic contacts, gole was used for p-MCT and indium was used for n$^{+}$-MCT. The fabrication took 5 photolithographic masks and all the processing temperatures of the MCT wafer were below 90$^{\circ}C$. The R,A of the fabricated devices was 7500${\Omega}cm^{2}$. The carrier lifetime of the devices was estimated 2.5ns. The junction was linearly-graded and the concentration slope was measured to be 1.7${\times}10^{17}/{\mu}m$. the normalized detectivity in 3~5$\mu$m IR was 1${\times}10^{11}cmHz^{12}$/W, which is sufficient for real application.

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다결정 초전도체 ${SmBa_2}{Cu_3}{O_x}$의 자기 이력곡선 (Magnetic hysteresis loops of the polycrystalline superconductor ${SmBa_2}{Cu_3}{O_x}$)

  • 이준호;정미숙;이부영;김건철;김영철;정대영
    • Progress in Superconductivity
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    • 제6권1호
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    • pp.84-88
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    • 2004
  • The polycrystalline superconductor $SmBa_2$$Cu_3$$O_{x}$ is fabricated, and intergranular magnetic properties are investigated using the critical state model, from which some useful parameters such as the critical current density and the intergranular volume fraction are obtained. The curve fitting for M-H hysteresis loop shows that the intergranular critical current density of $SmBa_2$$Cu_3$$O_{x}$ / decreases in the form of ($1-T/T_{c}$ )$^{1.5}$ . The intergranular volume fraction is influenced by granular morphology. From SEM image, the grains of $SmBa_2$$Cu_3$$O_{x}$ are found to be randomly shaped. This mean:; that the intergranular volume fraction of $SmBa_2$$Cu_3$$O_{x}$ / should be smaller than those of superconductors, of which grains are plate-shaped such as Tl-based superconductor.

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GALOIS GROUP OF GENERALIZED INVERSE POLYNOMIAL MODULES

  • Park, Sang-Won;Jeong, Jin-Sun
    • East Asian mathematical journal
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    • 제24권2호
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    • pp.139-144
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    • 2008
  • Given an injective envelope E of a left R-module M, there is an associative Galois group Gal($\phi$). Let R be a left noetherian ring and E be an injective envelope of M, then there is an injective envelope E[$x^{-1}$] of an inverse polynomial module M[$x^{-1}$] as a left R[x]-module and we can define an associative Galois group Gal(${\phi}[x^{-1}]$). In this paper we extend the Galois group of inverse polynomial module and can get Gal(${\phi}[x^{-s}]$), where S is a submonoid of $\mathds{N}$ (the set of all natural numbers).

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경주 남산 소나무림의 가을철 해발고도별 음이온 발생지수 (Negative Ion Generation Index according to Altitude in the Autumn of Pine Forest in Gyeongju Namsan)

  • 김정호;윤지훈;이상훈;최원준;윤용한
    • 한국환경생태학회지
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    • 제32권4호
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    • pp.413-424
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    • 2018
  • 본 연구에서는 경주 남산을 대상으로 지형구조 및 해발고도가 음이온 발생량에 미치는 영향을 분석하였다. 분석결과, 기온은 능선부($9.82^{\circ}C$) > 계곡부($8.44^{\circ}C$), 상대습도는 계곡부(59.01%) > 능선부(58.64%), 풍속은 능선부(0.63m/s) > 계곡부(0.37m/s), 일사량은 능선부($34.40W/m^2$) > 계곡부($14.69W/m^2$)로 나타났다. 음이온의 경우 계곡부($636.81ea/cm^3$) > 능선부($580.04ea/cm^3$)로 계곡부가 더 높은 음이온 발생량을 보였다. 해발고도와의 상관성 분석 결과, 계곡부에서는 기온, 상대습도, 일사량, 음이온 발생량과의 상관성이 검증되었으며, 상대습도, 일사량, 음이온 발생량과는 정의 상관관계, 기온과 부의 상관관계가 나타났다. 능선부에서는 기온, 상대습도, 풍속, 일사량, 음이온 발생량과의 상관성이 검증되었으며, 상대습도, 일사량, 음이온 발생량과는 정의 상관관계, 기온, 풍속과는 부의 상관관계가 나타났다. 회귀분석 결과, 기온의 경우 계곡부는 y= -0.006x+9.663 (x=해발고도, y=기온), 능선부의 경우 y= -0.009x+11.595(x=해발고도, y=기온)의 예측식을 얻었다. 상대습도의 경우 계곡부는 y= 0.027x+53.561 (x=해발고도, y=상대습도), 능선부의 경우 y= 0.008x+56.646 (x=해발고도, y=상대습도)의 예측식을 얻었다. 음이온 발생량의 경우 계곡부는 y= 0.577x+521.508 (x=해발고도, y=음이온 발생량), 능선부의 경우 y= 0.605x+549.068 (x=해발고도, y=음이온 발생량)의 예측식을 얻었다.

CONFORMAL CHANGES OF A RIZZA MANIFOLD WITH A GENERALIZED FINSLER STRUCTURE

  • Park, Hong-Suh;Lee, Il-Yong
    • 대한수학회보
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    • 제40권2호
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    • pp.327-340
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    • 2003
  • We are devoted to dealing with the conformal theory of a Rizza manifold with a generalized Finsler metric $G_{ij}$ (x,y) and a new conformal invariant non-linear connection $M^{i}$ $_{j}$ (x,y) constructed from the generalized Cern's non-linear connection $N^{i}$ $_{j}$ (x,y) and almost complex structure $f^{i}$ $_{j}$ (x). First, we find a conformal invariant connection ( $M_{j}$ $^{i}$ $_{k}$ , $M^{i}$ $_{j}$ , $C_{j}$ $^{i}$ $_{k}$ ) and conformal invariant tensors. Next, the nearly Kaehlerian (G, M)-structures under conformal change in a Rizza manifold are investigate.