• Korean Journal of Environmental Biology
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• v.24 no.1 s.61
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• pp.67-80
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• 2006

The effect of environmental forcing on picophytoplankton distribution pattern was investigated in the tropical and subtropical western Pacific (TSWP) and the East Sea in September, 2002, and the continental shelf of the East China Sea (C-ECS) in August, 2003. The abundance of picophytoplankton populations, Synechococcus, Prochlorococcus and picoeukaryotes were determined by flow cytometry analyses. Picophytoplankton vertical profiles and integrated abundance $(0\sim100\;m)$ were compared with these three physiochemically different regions. Variation patterns of integrated cell abundance of Synechococcus and Prochlorococcus in these three regions showed contrasting results. Synechococcus showed average abundance of $84.5X10^{10}\;cells\;m^{-2}$, in the TSWP, $305.6X10^{10}\;cells\;m^{-2}$ in the C-ECS, and $125.4X10^{10}\;cells\; m^{-2}$ in the East Sea where increasing cell concentrations were observed in the region with abundant nutrient. On the other hand, Prochlorococcus showed average abundance of $504.5X10^{10}\;cells\;m^{-2}$ in the TSWP, $33.2x10^{10}\;cells\;m^{-2}$ in the C-ECS, and $130.2X10^{10}\;cells\;m^{-2}$ in the East Sea exhibiting a distinctive pattern of increasing cell abundance in oligotrophic warm water. Although picoeukaryotes showed a similar pattern to Synechococcus, the abundance was 1/10 of Synechococcus. Synechococcus and picoeukaryotes showed ubiquitous distribution whereas Prochlorococcus generally did not appear in the C-ECS and the East Sea with low salinity environment. The average depth profiles for Synechococcus and Prochlorococcus displayed uniform abundance in the surface mixed layer with a rapid decrease below the surface mixed layer. for Prochlorococcus, a similar rapid decreasing trend was not observed below the surface mixed layer of the TSWP, but Prochlorococcus continued to show high cell abundance even down to 100 m depth. Picoeukaryotes showed uniform abundance along $0\sim100\;m$ depth in the C-ECS, and abundance maximum layer appeared in the East Sea at $20\sim30\;m$ depth.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2022.11a
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• pp.104-106
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• 2022

유무인 선박이 혼재된 운항 환경에서 발생 할 수 있는 보안 위협을 식별하고 안전한 M-S2X 통신 환경 마련을 위한 상호인증 요구사항을 분석하였다.

• Journal of Sensor Science and Technology
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• v.17 no.3
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• pp.203-209
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• 2008

Thick film formaldehyde (HCHO) gas sensors were fabricated by using $La_1_{-x}Sr_xMO_3$ (M= Fe, Co, Mn) ceramics. The powders of $La_1_{-x}Sr_xMO_3$ (M=Fe, Co, Mn) were synthesized by conventional solid-state reaction method. By using the $La_1_{-x}Sr_xMO_3$ (M=Fe, Co, Mn) paste, the thick-film formaldehyde sensors were prepared on the alumina substrate by silkscreen printing method. The experimental results revealed that $La_1_{-x}Sr_xMO_3$ (M= Fe, Co, Mn) ceramic powder has a perovskite structure and the thick-film sensor shows excellent gas-sensing characteristics to formaldehyde gas (sensitivity of $La_{0.8}Sr_{0.2}FeO_3$, S= 14.7 at operating temperature of $150^{\circ}C$ in 50 ppm HCHO ambient).

• Journal of Food Hygiene and Safety
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• v.32 no.6
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• pp.507-512
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• 2017

There has been increasing concern regarding misuse of disinfectants and sanitizers such as ethanol, sodium hypochlorite, and hydrogen peroxide for food contact surfaces in the food industry. Examining the efficacy of the concentration of currently used disinfectants and sanitizers is urgently required in the Korean society. This study aimed to develop predictive reduction models for Escherichia coli and Staphylococcus aureus in suspension, as a function of $ClO_2$ (chlorine dioxide) and contact time using response surface methodology. E. coli ATCC 10536 and S. aureus ATCC 6538 (initial inoculum, 8-9 log CFU/mL) in tryptic soy broth were treated with different concentrations of $ClO_2$ (5, 20, and 35 ppm) for different contact times (1, 3, and 5 min) following a central composite design. The polynomial reduction models for $ClO_2$ on E. coli and S. aureus were developed under the clean condition. E. coli reduction by 35 ppm $ClO_2$ for 1, 3, and 5 min was 2.49, 2.70, and 3.65 log CFU/mL, respectively. Also, S. aureus reduction by 35 ppm $ClO_2$ for 1, 3, and 5 min was 4.59, 5.25, and 5.81 log CFU/mL, respectively. The predictive response polynomial models developed were $R=0.43231-0.056492^*X_1-0.097771^*X_2+9.24167E-003^*X_1^*X_2+3.06333E-003^*X_1{^2}$ ($R^2=0.98$) on E. coli and $R=1.10542-0.20896^*X_1-0.046062^*X_2+8.30000E-003^*X_1^*X_2+8.73300E-003^*X_1{^2}$ ($R^2=0.99$) on S. aureus, where R was the bacterial reduction (log CFU/mL), $X_1$ was the concentration and $X_2$ was the contact time. Our predictive reduction models should be validated in developing the optimal concentration and contact time of $ClO_2$ for inhibiting E. coli and S. aureus on food contact surfaces.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.13-16
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• 2003

Mn-doped $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film phosphors have been grown using a pulsed laser deposition technique under various growth conditions. The structural characterization carr~ed out on a series of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) films grown on MgO(l00) substrates usmg Zn-rich ceramic targets. Oxygen pressure was varied from 50 to 200 mTorr and Zn/Ga ratio was the function of oxygen pressure. XRD patterns showed that the lattice constants of the $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin film decrease with the substitution of sulfur and selenium for the oxygen in the $ZnGa_2O_4$. Measurements of photoluminescence (PL) properties of $ZnGa_{2}O_{4}$:$Mn^{2+}$ (M=S, Se) thin films have indicated that MgO(100) is one of the most promised substrates for the growth of high quality $ZnGa_2O_{4-x}M_{x}$:$Mn^{2+}$ (M=S, Se) thin films. In particular, the incorporation of Sulfur or Selenium into $ZnGa_2O_4$ lattice could induce a remarkable increase in the intensity of PL. The increasing of green emission intensity was observed with $ZnGa_2O_{3.925}Se_{0.075}:$Mn^{2+}$ and $ZnGa_2O_{3.925}S_{0.05}$:$Mn^{2+}$ films, whose brightness was increased by a factor of 3.1 and 1.4 in comparison with that of $ZnGa_{2}O_{4}$:$Mn^{2+}$ films, respectively. These phosphors may promise for application to the flat panel displays.

• Journal of the Korean Child Neurology Society
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• v.23 no.2
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• pp.45-50
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• 2015

Purpose: X-linked adrenoleukodystrophy (X-ALD) is a fatal, axonal demyelinating, neurodegenerative disease, and is caused by mutations the in ABCD1 (ATP-binding cassette transporter subfamily D member 1). Oxidative damage of proteins caused by very long chain fatty acid accumulating in X-ALD, is an early event in the neurodegenerative cascade. We evaluated valproic acid (VPA) as a possible option for oxidative damage in X-ALD. Method: We generated fibroblast of the childhood cerebral ALD from patient. We evaluated mRNA (ribonucleic acid) level of ABCD2 by real-time polymerase chain reaction, and reactive oxygen species (ROS) levels by flow cytometry. Results: VPA increased expression of ABCD2 in both control and ALD fibroblast. ABCD2 gene mRNA expression was increased 1.76 fold in normal fibroblasts, and 2.22 fold in the X-ALD fibroblasts. ROS levels were decreased in VPA treated X-ALD fibroblast, especially in treated with 1 mM of VPA. ROS levels revealed 13.7 in control fibroblast, on the other hand, 5.83 in X-ALD fibroblast treated with 1 mM of VPA. Conclusion: We propose VPA as a promising novel therapeutic approach in oxidant damage that warrants further clinical investigation in X-ALD.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.23-26
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• 1997

In exposuring x-rays, we can adjust three variables of kVp, mA and sec. The kVp is one of main factors affecting x-ray quality -peneterability. And miliampere-seconds is directly proportional to x-ray quantity. In this paper, we detected voltage variation of CdS, II-VI group semiconductor compounds, by kVp as the fundamental experiments of designing x-ray dosimeter. We exposured x-ray on the material from 40 to 100 kVp by increasing 2kVp using Shimadazu TH-500-125 Radio-Tex cx-s x-ray machine. We fixed miliampere -seconds to 100mA and 0.2 sec. After acquiring the raw data, we plotted the graph of kVp and voltage variation and figured slope value of 0.093 by regression. The standard deviation of voltage to kVp was 0.22. For the future study, the mAs variation study will be needed to investigate the connections between kVp and mAs in order to design x-ray dosimeter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.106-111
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• 2000

The magnetic thin films can be prepared without vacuum process and under the low temperature (<100 $^{\circ}C$) by ferrite plating. We have performed ferrite plating of M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$(x=0.00~0.08) films and N $i_{x}$Z $n_{0.22}$F $e_{*}$2.78-x/ $O_4$(x=0.00~0.15) films on cover glass at the substrate temperature 90 $^{\circ}C$. The crystal structure of the samples has been identified as a single phase of polycrystal spinel structure by x-ray diffraction technique. The lattice constant in the M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$films increases but in the N $i_{x}$Z $n_{0.22}$F $e_{*}$2.78-x/ $O_4$films decrease with the composition parameter, x. The saturation magnetization in the M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$films does not greatly change, in agreement with observations on bulk samples.k samples.k samples.

• Journal of applied mathematics & informatics
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• v.38 no.1_2
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• pp.91-97
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• 2020

Presented in this paper is a characterization of Weibull distribution by an independence property of upper record values that X_k has a Weibull distribution if and only if ${\frac{X_U(m)}{X_U(n)}}$ and X_U(s) are independent for 1 ≤ m < n < s.