• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.10-16
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• 2010

In this paper, synthesis here Mn add to Ar injection the state and a vacuum an atomosphere $ZnGa_2O_4$ : Mn, ZnO and $Ga_2O_3$ power of 1 : 1 mole ratio mixture. Manufacture a close examination of oxygen a component variation luminescence a specific character reach an in fluence of $ZnGa_2O_4$ : Mn, luminescence spectrum observation also an explanation of Mn site symmetry and at luminescence spectrum reach an influence from low temperature photoluminescence spectrum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.48-53
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• 2001

The crystal structure of ZnS fabricated by gas-liquid phase reaction was refined by the Rietveld program using X-ray diffraction data. The R-weighted pattern (R$\sub$wp/) of ZnS powder was 10.85%. The fraction of HCP phase was closely related with extra amount of H$_2$S gas. The lattice parameters and crystalline size were changed by the relative ratio of multi-phase. The luminescence property of ZnS:Cu, Al green phosphors prepared by conventional methods was good in the range of 91∼94% and 150∼190${\AA}$, respectively. According to the maximum entropy electron density(MEED) methods, any defects in (001) plane of cubic phase were not found. We suggest that both the Rietveld and maximum entropy density methods may be useful tools for studying luminescence mechanism of other phosphors materials.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.125-130
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• 2006

The optical gain and the luminescence of a ZnO quantum well with MgZnO barriers is studied theoretically. We calculated the non-Markovian optical gain and the luminescence for the strained-layer wurtzite quantum well taking into account of the excitonic effects. It is predicted that both optical gain and luminescence are enhanced for the ZnO quantum well when compared with those of InGaN-AlGaN quantum well structure due to the significant reduction of the piezoelectric effects in the ZnO-MgZnO systems.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.2
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• pp.52-55
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• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.65-68
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• 2007

High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.422-426
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• 2006

[ $Sr_xCa_{(1-x)}TiO_3$ ] red phosphors doped with Pr(0.13 mol%) and Al(0.23 mol%) were synthesized by solid state reaction method. Change of crystal structure occurred in $Sr_xCa_{(1-x)}TiO_3:Pr,Al$ phosphors with increasing value of x. Green and red luminescence were observed from $SrTiO_3:Pr,Al$ phosphors at low temperature. However, only red luminescence in the case of $CaTiO_3:Pr,Al$ phosphors was measured at low temperature. The main cause of green luminescence was explained by the bandgap reduction.

• Journal of Applied Reliability
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• v.12 no.4
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• pp.275-285
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• 2012

This paper presents a changes of luminescence property for converted white LEDs with the commercially available silicate phosphor. If silicate phosphor's quantity increase step by step. luminescence property will be changing. we analyze luminescence property for these change and carry out the high temperature aging test for 7,000 hours, the high temperature and humidity aging test for 7,000 hours for reliability. LED degradation not only results in reduced light output but also in color changes. so we monitor correlated color temperature (CCT), chromaticity coordinates(x, y) and spectrum intensity. Those results suggest that humidity factor more bad effect in color changes than temperature factor and Lighting quality is related with quantity of phosphor.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.743-745
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• 2006

The luminescence properties of $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphor for Field Emission Displays (FEDs) have been investigated in powders prepared though solid-state reactions. $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphors indicate a higher luminescent intensity, and have been found to have potential for field emission displays. The addition of Ba increased the luminescence intensity at 617 nm by up to 30%. Ba ions are effective in producing the energy transfers from host-to-activator in 4f-5d transitions.

• Journal of Electrical Engineering and Technology
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• v.3 no.2
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• pp.276-279
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• 2008

We report on the enhancement of cathode-luminescence in an $In_xGa_{1-x}N/In_yGa_{1-y}$ green light emitting diode structure using two-dimensional photonic crystals. The square lattice arrays of photonic crystals with diameter/periodicity of 200/500 nm were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to etch and define photonic crystals. Three samples with different etch depths, i.e., 170, 95, and 65 nm, were constructed. Field emission scanning electron microscope analysis shows that air holes of photonic crystal structure with inverted-cone shapes were fabricated after dry etching. Cathode-luminescence measurement indicated that up to 30-fold enhancement of cathode-luminescence intensity has been achieved.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.5
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• pp.355-364
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• 2009

Electro-Luminescence (EL) sheets have been widely used in lighting displays, mainly used as advertisement panels. To drive the ELs in optimal conditions, it is required to understand the load profile of the EL. Hence, in this paper, a modeling for an EL sheet was performed to analyze the load characteristics of the EL. Based on the extracted model of the EL, a topology for inverter system was chosen and the optimal design parameters were obtained. The validity of the designed EL driver system was verified through computer simulations and experiments.