• Journal of the Semiconductor & Display Technology
• /
• v.14 no.1
• /
• pp.61-65
• /
• 2015

We have fabricated poly(3,4-ethylenedioxythiophene) : poly(4-styrenesulfonate) (PEDOT : PSS) thin films using a slotdie coater for the applications of OLED lightings. It is demonstrated that the properties of slot-die coated PEDOT : PSS films are comparable with those of spin-coated ones. Namely, the average and peak-to-peak roughness of the slot-die coated 50-nm-thick PEDOT : PSS film are measured to be as low as 0.247 nm and 1.3 nm, respectively. Moreover, we have obtained excellent thickness uniformity (~1.91%). With the slot-die coated PEDOT : PSS films, we have fabricated green phosphorescent OLED devices. For comparison, we have also fabricated OLED devices with spin-coated PEDOT : PSS films. Both show almost no discrepancy in device performance. The power efficiency (25.4 lm/W) and emission uniformity (77%) of OLEDs with slot-die coated PEDOT : PSS films are shown to be slightly lower than those (27.3 lm/W, 80%) of OLEDs with spin-coated PEDOT : PSS films at the luminance of 1,000nit, increasing the feasibility of using a slot-die coating process for the fabrication of large-area OLED lighting sources at a competitive price.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.148-148
• /
• 2015

Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]

• Korean Journal of Materials Research
• /
• v.22 no.3
• /
• pp.140-144
• /
• 2012

Compared with bulk material, quantum dots have received increasing attention due to their fascinating physical properties, including optical and electronic properties, which are due to the quantum confinement effect. Especially, Luminescent CdSe quantum dots have been highly investigated due to their tunable size-dependent photoluminescence across the visible spectrum. They are of great interest for technical applications such as light-emitting devices, lasers, and fluorescent labels. In particular, quantum dot-based light-emitting diodes emit high luminance. Quantum dots have very high luminescence properties because of their absorption coefficient and quantum efficiency, which are higher than those of typical dyes. CdSe quantum dots were synthesized as a function of the synthesis time and synthesis temperature. The photoluminescence properties were found strongly to depend on the reaction time and the temperature due to the core size changing. It was also observed that the photoluminescence intensity is decreased with the synthesis time due to the temperature dependence of the band gap. The wavelength of the synthesized quantum dots was about 550-700 nm and the intensity of the photoluminescence increased about 22~70%. After the CdSe quantum dots were synthesized, the particles were found to have grown until reaching a saturated concentration as time increased. Red shift occurred because of the particle growth. The microstructure and phase developments were measured by transmission electron microscopy (TEM) and X-ray diffractometry (XRD), respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.6
• /
• pp.260-264
• /
• 2007

We have studied stability in organic light-emitting diode depending on buffer layer and cathode. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. An electron injection energy barrier into organic material is different depending on a work function of cathodes. Theoretically, the energy barriers for the electron injection are 1.2 eV, -0.1 eV, and 0.0 eV for Al, LiAl, and LiF/Al at 300 K, respectively. We considered the cases that holes are injected to organic light-emitting diode. The hole injection energy barrier is about 0.7 eV between ITO and TPD without buffer layer. For hole-injection buffer layers of CuPc and PEDOT:PSS, the hole injection energy barriers are 0.4 eV and 0.5 eV, respectively. When the buffer layer of CuPc and PEDOT:PSS is existed, we observed the effects of hole injection energy barrier, and a reduction of operating-voltage. However, in case of PVK buffer layer, the hole injection energy barrier becomes high(1.0 eV). Even though the operating voltage becomes high, the efficiency is improved. A device structure for optimal lifetime condition is ITO/PEDOT:PSS/TPD/$Alq_3$/LiAl at an initial luminance of $300cd/m^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.11
• /
• pp.717-721
• /
• 2017

We studied the performance enhancement of organic light-emitting diodes (OLEDs) using 2,3,5,6-fluoro-7,7,8,8-tetracyanoquinodimethane ($F_4-TCNQ$) as the hole-transport layer. To investigate how $F_4-TCNQ$ affects the device performance, we fabricated a reference device in an ITO (170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm) structure. Several types of test devices were manufactured by either doping the $F_4-TCNQ$ in the TPD layer or forming a separate $F_4-TCNQ$ layer between the ITO anode and TPD layer. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxyquinoline) aluminum ($Alq_3$), and $F_4-TCNQ$ layers were formed by thermal evaporation at a pressure of $10_{-6}$ torr. The deposition rate was $1.0-1.5{\AA}/s$ for TPD and $Alq_3$. The LiF was subsequently thermally evaporated at a deposition rate of $0.2{\AA}/s$. The performance of the OLEDs was considered with respect to the turn-on voltage, luminance, and current efficiency. It was found that the use of $F_4-TCNQ$ in OLEDs enhances the performance of the device. In particular, the use of a separate layer of $F_4-TCNQ$ realizes better device performance than other types of OLEDs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.11
• /
• pp.980-986
• /
• 2009

In a triple-layered structure of ITO/N,N'-diph enyl-N,N'bis(3-methylphenyl)-1,1' - biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline(BCP)/Al device, we have studied the electrical and optical characteristics of organic light-emitting diodes(OLEDs) depending on the deposition condition of BCP layer. Several different sizes of holes on boat and several different deposition rates were employed in evaporating the organic materials. And then, electrical properties of the organic light-emitting diodes were measured and the performance of the devices was analyzed. It was found that the hole-size of crucible boat and the evaporation rate affect on the surface roughness of BCP layer as well as the performance of the device. When the hole-size of crucible boat and the deposition rate of BCP are 1.2 mm and $1.0\;{\AA}/s$, respectively, average surface roughness of BCP layer is lower and the efficiency of the device is higher than the ones made with other conditions. From the analysis of current density-luminance-voltage characteristics of a triple layered device, we divided the conductive mechanism by four region according to applied voltage. So we have obtained a coefficient of ${\beta}_{ST}$ in schottky region is $3.85{\times}10^{-24}$, a coefficient of ${\beta}_{PF}$ in Poole-Frenkel region is $7.35{\times}10^{-24}$, and a potential barrier of ${\phi}_{FN}$ in Fower-Nordheim region is 0.39 eV.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.42 no.6
• /
• pp.711-720
• /
• 2009

Characteristics of spectral irradiance based on the distance from the light source, which combined metal halide lamp and high-luminance light-emitting diode (LED) light, were studied to investigate a suitable operating method for fishing lamps of the next generation. A 380-780 nm wavelength radiation was superior when using 1 W electrical power in the order of metal halide lamp, blue LED, white LED, and combined LED lights. The wavelengths at which the irradiance was at a maximum were fixed to 581 nm for the light source, which was combined for each ratio. If the irradiance characteristics at 300-1100 nm wavelengths were set as 100%, the irradiance rates at 400-599 nm were 100%, 72.7%, 88.9%, and 69.5% for the blue, white, combined LED lights, and metal halide lamp, respectively. This indicated that the color rendering of the LED lights was dependent on the metal halide lamp light source. When the horizontal profiles (450-550 nm wavelength) of irradiances were compared to a different type of light source in the ratio white LED: combined LED lights: blue LED: metal halide lamp, the irradiated area of more than $0.01\;{\mu}mol/s/m^2/nm$ was in the ratio 1.0 : 1.3 : 1.7 : 37.3, respectively. Based on the radiation characteristics and irradiance according to the distance from the light source, LED lights have an estimated economic efficiency if used before and after operation of a metal halide lamp.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.13 no.7
• /
• pp.3146-3151
• /
• 2012

For using them as a optical source of inspections equipment for LCD panel, the design ofexcellent backlight system, brightness uniformity and high power and good protection against heat is essential.In this paper, backlight system which is built in the 45 inch side emitting LCD backlight by LED arraystructure and driving circuit were designed and developed. After that, their performances were measured. Itshowed the luminance from 3,000 to 25,000[$cd/m^2$], the mean value x:0.3144, y:0.3076 of x-y chromaticity,dimming range of 27~515[$cd/m^2$], free flicker noise in the 80kHz and black level of 0.7~0.1[$cd/m^2$], thermaltest of cooling system in 20,000[$cd/m^2$] over values.

• Journal of Information Display
• /
• v.3 no.1
• /
• pp.6-10
• /
• 2002

We have synthesized a new green Ir(III) complex fac-tris-(3-methyl-2-phenyl pyridine)iridium(III) $Ir(mpp)_3$ and fabricated phosphorescent polymer light-emitting device using it as a triplet emissive dopant in PVK. $Ir(mpp)_3$ showed absorption centered at 388 nm corresponding to the $^1MLCT$ transition as .evidenced by its extinction coefficient of the order of $10^3{\cdot}$ From the PL and EL spectra of the $Ir(mpp)_3$ doped PVK film, the emission maximum was observed at 523 nm, due to the radiative decay from the $^3MLCT$ state to the ground state, confirming a complete energy transfer from PVK to $Ir(mpp)_3$. The methyl substitution has probably caused a red shift in the absorption and emission spectrum compared to $Ir(mpp)_3$. The device consisting of a 2 % doped PVK furnished 4.5 % external quantum efficiency at 72 $cd/m^2$ (current density of 0.45 $mA/cm^2$ and drive voltage of 13.9 V) and a peak luminance of 25,000 $cd/m^2$ at 23.4 V (494 $mA/cm^2$). This work demonstrates the impact of the presence of a methyl substituent at the 3-position of the pyridyl ring of 2-phenylpyridine on the photophysical and electroluminescence properties.

• Journal of the Korean Ceramic Society
• /
• v.41 no.5
• /
• pp.381-387
• /
• 2004

Recently developed Plasma Display Panels (PDP) require phosphors of high luminance at Vacuum Ultraviolet (VUV) excitation. The present investigation developed new PDP phosphors using combinatorial chemistry method. We applied T $b^{3+}$ -activated yttrium gadolinium phosphates system to our combinatorial fine-tuning technique. As a result, the optimum composition was determined to be (G $d_{0.74}$ $Y_{0.11}$T $b_{0.15}$) $P_{1.15}$ $O_{\delta}$ through the two-step combinatorial screening process including excess phosphorous and Gd replacement. We found that the sample of the optimum composition shows a higher luminescence efficiency at VUV excitation and a shorter decay time than the commercially available Z $n_2$ $SiO_4$:Mn phosphor.