• Title/Summary/Keyword: Low-voltage

Search Result 6,397, Processing Time 0.04 seconds

Design of Double-Dipole Quasi-Yagi Antenna with 7 dBi gain (7 dBi 이득을 가지는 이중 다이폴 준-야기 안테나 설계)

  • Yeo, Junho;Lee, Jong-Ig;Baek, Woon-Seok
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.20 no.2
    • /
    • pp.245-252
    • /
    • 2016
  • In this paper, the design of a double-dipole quasi-Yagi antenna (DDQYA) with a gain over 7 dBi at 1.70-2.70 GHz band is studied. The proposed DDQYA consists of two strip dipoles with different lengths and a ground reflector, which are connected trough a coplanar stripline. The length of the second dipole is adjusted to increase the gain in the low frequency band, whereas a rectangular patch director is appended to the DDQYA to enhance the gain in the middle and high frequency band. The effects of the length of the second dipole, and the length and width of the director on the antenna performance are analyzed, and final design parameters to obtain a gain over 7 dBi are obtained. A prototype of the proposed DDQYA is fabricated on an FR4 substrate, and the experimental results show that the antenna has a frequency band of 1.60-2.86 GHz for a VSWR < 2, and measured gain ranges 7.2-7.6 dBi at 1.70-2.70 GHz band.

Degradation from Polishing Damage in Ferroelectric Characteristics of BLT Capacitor Fabricated by Chemical Mechanical Polishing Process (화학적기계적연마 공정으로 제조한 BLT Capacitor의 Polishing Damage에 의한 강유전 특성 열화)

  • Na, Han-Yong;Park, Ju-Sun;Jung, Pan-Gum;Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.06a
    • /
    • pp.236-236
    • /
    • 2008
  • (Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

  • PDF

A 12b 130MS/s 108mW $1.8mm^2$ 0.18um CMOS ADC for High-Quality Video Systems (고화질 영상 시스템 응용을 위한 12비트 130MS/s 108mW $1.8mm^2$ 0.18um CMOS A/D 변환기)

  • Han, Jae-Yeol;Kim, Young-Ju;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.45 no.3
    • /
    • pp.77-85
    • /
    • 2008
  • This work proposes a 12b 130MS/s 108mW $1.8mm^2$ 0.18um CMOS ADC for high-quality video systems such as TFT-LCD displays and digital TVs requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC optimizes power consumption and chip area at the target resolution and sampling rate based on a three-step pipeline architecture. The input SHA with gate-bootstrapped sampling switches and a properly controlled trans-conductance ratio of two amplifier stages achieves a high gain and phase margin for 12b input accuracy at the Nyquist frequency. A signal-insensitive 3D-fully symmetric layout reduces a capacitor and device mismatch of two MDACs. The proposed supply- and temperature- insensitive current and voltage references are implemented on chip with a small number of transistors. The prototype ADC in a 0.18um 1P6M CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 2.12LSB, respectively. The ADC shows a maximum SNDR of 53dB and 51dB and a maximum SFDR of 68dB and 66dB at 120MS/s and 130MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 108mW at 130MS/s and 1.8V.

Luminous Characteristics of Transparent Field Emitters Produced by Using Ultra-thin Films of Single Walled Carbon Nanotubes

  • Jang, Eun-Soo;Goak, Jeung-Choon;Lee, Han-Sung;Lee, Seung-Ho;Lee, Nae-Sung
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2009.05a
    • /
    • pp.31.1-31.1
    • /
    • 2009
  • Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.

  • PDF

Study of Low-K Si-O-C-H Thin Films (Si-O-C-H 저유전율 박막의 특성 연구)

  • 김윤해;이석규;김형준
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 1999.07a
    • /
    • pp.106-106
    • /
    • 1999
  • 반도체 소자가 소브마이크론 이하로 집적화 되어감에 따라, RC 신호 지연 및 간섭 현상, 전력 소비의 증가 문제가 심각하게 대두되고 있다. 이러한 문제를 개선하기 위해서는, 현재 층간 절연막으로 상용화되어 있는 SiO2 박막을 대체할 저유전율 박막의 개발이 필수적이며, 많은 연구자들이 여러 가지 새로운 유기물질과 무기물질은 제안하고 있다. 반도체 공정상의 적합성을 고려할 때, 이들 여러물질 중에서 알킬기를 함유한 SiO2 박막(이하 'Si-O-C-H 박막'으로 표기)에 많은 관심이 집중되고 있다. Si-O-C-H 박막은 알킬기에 의해 형성된 나노 스케일의 기공에 의해 작은 유전율을 가지게 된다. 따라서, 박막내의 알킬기의 함유량이 많을수록 보다 작은 유전율을 얻을 수 있다. 그러나 과다한 알킬기의 함유는 Si-O-C-H 박막의 열적 특성을 열화시키는 부정적인 효과도 있다. 본 연구에서는 bis-trimethylsilylmethane(BTMSM, H9C3-Si-CH2-Si-C3H9) precursor를 이용하여 Si-O-C-H 박막을 증착하였다. BTMSM precursor의 중요한 특징중 하나는, 두 실리콘 원자 사이에 Si-CH2 결합이 존재한다는 사실이다. Si-CH2 결합은 양쪽의 Si에 의해 강하게 결합되어 있어서, BTMSM precursor를 사용하여 Si-O-C-H 박막은 유전상수도 작을 뿐 아니라, 열적으로도 안정된 특성이 얻어질 것으로 기대된다. Si-O-C-H 박막의 열적 안정성을 평가하기 위하여, 고온 열처리 전후의 FT-IR 스펙트럼 분석과 C-V(capacitance-voltage) 측정에 의한 유전상수 변화를 살펴보았다. 또한 증착된 박막의 미세구조 및 step coverage 특성 관찰을 위하여 SEM(scanning electron microscopy) 및 TEM(transmission electron micfroscopy) 분석을 하였다. 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다. 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.phology 관찰결과 Ge 함량이 높은 박막의 입계가 다결정 Si의 입계에 비해 훨씬 큰 것으로 나타났으며 근 값도 증가하는 것으로 나타났다. 포유동물 세포에 유전자 발현벡터로써 사용할 수 있음으로 post-genomics시대에 다양한 종류의 단백질 기능연구에 맡은 도움이 되리라 기대한다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대

  • PDF

Electrical Stability of Zn-Pr-Co-Cr-Dy Oxides-based Varistor Ceramics (Zn-Pr-Co-Cr-Dy 산화물계 바리스터 세라믹스의 전기적 안정성)

  • 남춘우;박종아;김명준;류정선
    • Journal of the Korean Ceramic Society
    • /
    • v.40 no.11
    • /
    • pp.1067-1072
    • /
    • 2003
  • The electrical stability of the varistor ceramics composed of Zn-Pr-Co-Cr-Dy oxides-based varistors was investigated at 0.0∼2.0 mol% Dy$_2$O$_3$ content under DC accelerated aging stress. The ceramic density was increased up to 0.5 mol% Dy$_2$O$_3$ whereas further addition of Dy$_2$O$_3$ decreased sintered ceramic density. The density sailently affected the stability due to the variation of conduction path. The nonlinearity of varistor ceramics was greatly improved above 45 in the nonlinear exponent and below nearly 1.0 ${\mu}$A by incorporating Dy$_2$O$_3$. Under 0.95 V$\_$1mA/150$^{\circ}C$/24 h stress state, the varistor ceramics doped with 0.5 mol% Dy$_2$O$_3$ exhibited the highest electrical stability, in which the variation rates of varistor voltage, nonlinear exponent, and leakage current were -0.9%, -14.4%, and +483.3%, respectively. The variation rates of relative permittivity and dissipation factor were +7.1% and +315.4%, respectively. The varistors with further addition of Dy$_2$O$_3$ exhibited very unstable state resulting in the thermal runaway due to low density.

The optical CT output signal characteristic according to temperature change (온도변화에 따른 광CT의 출력 특성)

  • Son, Hyun-Mok;Ahn, Mi-Kyoung;Heo, Soon-Young;Jeon, Jea-Il;Park, Won-Zoo;Lee, Kwang-Sik;Kim, Jung-Bae;Kim, Min-Soo
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
    • /
    • 2004.05a
    • /
    • pp.29-33
    • /
    • 2004
  • In this paper, we took the basic experiment in order to explore the characteristics of optical CT(optical current transformer) for measuring high current in a superhigh voltage condition using faraday effect and wrote that. We used the 1,310[nm] Laser Diode for the source of light and PIN-Photodiode for receiver. The transmission line of light was composed of the single-mode fiber of 30[m] which could maintain the state of polarization in the optical fiber. The range of current was from 400[A] to 1300[A]. In addition, the temperature ranged from $20[^{\circ}C}]\;to\;50[^{\circ}C]$. In a same experiment condition, a power magnitude increases in proportion as input current is increasing and temperature become low. The maximum ratio of error in temperature of $50[^{\circ}C]$ appears 0.15[%] and the 0.16[%], 1.24[%] and 0.07[%] is ratio of error in respectively $40[^{\circ}C],\;30[^{\circ}C],\;and\;20[^{\circ}C]$.

  • PDF

Effect of $Ca^{++}$ on High K-induced Contracture of Isolated Frog Ventricular Muscle (적출 심근의 칼륨경축에 대한 칼슘이온 효과)

  • Choi, Youn-Baik;Kim, Ki-Whan
    • The Korean Journal of Physiology
    • /
    • v.20 no.1
    • /
    • pp.31-41
    • /
    • 1986
  • The sufficient myoplasmic $Ca^{++}$ to react with the contractile proteins is necessary to induce contraction of a cardiac muscle. These $Ca^{++}$ for the production of muscle contraction are supplied from the three recognized $Ca^{++}$ sources; internal $Ca^{++}$ release via the sarcoplasmic reticulum(SR), $Ca^{++}$ influx through a gated Ca-channel in the membrane as a Isi, and $Ca^{++}$ transport by the mechanism of Na/ca exchange. However, it is still controversial which $Ca^{++}$ sources act as a main contributor for myoplasmic $Ca^{++}$, Therefore, this study was undertaken in order to examine the $Ca^{++}$ sources for the contraction of frog ventricle. There is evidence that the SR is sparse in frog ventricular fibers, and that T-tubules are absent. Isolated ventricular strips of frog, Rana nigromaculata, were used in this experiment. Isometric tension was recorded by force transducer, and membrane potentials of ventricular muscles were measured through the intracellular glass microelectrodes, which were filled with 3M KCI and had resistance of $30{\pm}50M{\Omega}$. All experiments were performed at room temperature in a tris·buffered Ringer solution which was aerated with 100% $O_2$. Isotonic high K, low Na solution was used to induce K-contracture, K-contracture appeared at the concentration of 20 to 30mM-KCI and was potentiated in parallel with the increase in KCI concentration. The contracture had two components: an initial rapid phasic and a subsequent slow tonic contractile responses. Membrane Potentials measured at normal Ringer solution(2.5mM KCI) was -90 to -100 mV, and decreased linearly as the KCI concentration increased; -55mV at 20mM.KCI, -45mV at 30 mM.KCI, -30 mY at 50 mM.KCI, and -12 mV at 100 mM.KCI. K-contracture was evoked firstly at the membrane potential of -45 mV. The contracture was potentiated by the increase of bathing extracellular $Ca^{++}$ concentration. However, in the absence of $Ca^{++}$ the contracture was almost not induced by 50 mM.KCI solution. Caffeine(20mM) in normal Ringer solution, which is known to release $Ca^{++}$ from SR without substantial effects on the $Ca^{++}$ fluxes across the surface membrane, did not affect membrane potential and also not initiate contracture, but the caffeine in 20 mM-KCI Ringer solution produced a contracture. Above results suggest that the main $Ca^{++}$ source for the K·contracture of frog ventricle is $Ca^{++}$ influx through the voltage-dependent Ca-channel, and that in the K-contracture at the concentration of 100 mM-KCI, the mechanism of Na/ca exchange also partly contributs, in addition to the $Ca^{++}$ influx.

  • PDF

Studies of gas chromatographic analysis of malodorous S compounds in air (대기 중 악취황 성분들에 대한 GC 분석의 특성)

  • Kim, Ki-Hyun;Oh, Sang In;Choi, Y.J.
    • Analytical Science and Technology
    • /
    • v.17 no.2
    • /
    • pp.145-152
    • /
    • 2004
  • In this study, analytical characteristics of S gas detection technique were investigated against four major reduced S compounds (including hydrogen sulfide; methyl mercaptan; dimethyl sulfide (DMS); and dimethyl disulfide (DMDS)). To analyze such properties, an analytical system was constructed by combining the GC/PFPD system with the loop injection method. The results of our analysis indicated that response behavior of S gases differs greatly between compounds; H2S exhibited the weakest sensitivity of all compounds, while DMDS with two S-atom compounds the strongest sensitivity. To learn more about their response behavior on GC/PFPD method, their calibration patterns were compared using the three arbitrarily set concentration ranges of low, intermediate, and high. The results showed that calibration patterns of each compound are distinguished because of different factors. There was a line of evidence that calibration of $H_2S$ was affected noticeably by adsorptive loss within the system, whereas those of DMS and DMDS were influenced most sensitively by such factor as the linearity response at a given PMT voltage setting. The overall results of our study suggest that quantification of malordorous S compounds require a better knowledge of compound-specific response behavior against GC detection.

A study on development of RGB color variable optical ID module considering smart factory environment (스마트 팩토리 환경을 고려한 RGB 컬러 가변형 광 ID 모듈개발 연구)

  • Lee, Min-Ho;Timur, Khudaybergenov;Lee, Beom-Hee;Cho, Ju-Phil;Cha, Jae-Sang
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
    • /
    • v.11 no.5
    • /
    • pp.623-629
    • /
    • 2018
  • Smart Factory is a concept of automatic production system of machines by the fusion of ICT and manufacturing. As a base technology for realizing such a smart factory, there is an increasing interest in a low-power environmentally friendly LED lighting system, and researches on so-called optical ID related application technologies such as communication using a LED and position recognition are actively underway. In this paper, We have proposed a system that can reliably identify logistics location and additional information without being affected by electromagnetic interference such as high voltage, high current, and generator in the plant. Through the basic experiment, we confirmed the applicability of the color ID recognition rate from 98.8% to 93.8% according to the eight color variations in the short distance.