• 전기학회논문지
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• 제58권11호
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• pp.2149-2154
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• 2009

Electric power quality in power transmission/distribution systems has considerably been deteriorated with the increase in the capacity of distributed generators (DGs). It is because inverters, connecting DGs to conventional power grids, tend to generate harmonic current and voltage. For harmonic mitigation, a large amount of research has been done on passive and active filters, which have been operating successfully in many countries. This paper, therefore, presents how to adopt the filters to an inverter-based DG, with considering a system consisting of both inverter-based DG and harmonic filters. In particular, this paper describes the simulation results using the PSCAD/EMTDC: firstly, the relationship between total harmonic distortion(THD) of current and output power of DG: secondly, the harmonic mitigation ability of passive and active filters. The system, furthermore, is obliged to satisfy the regulations made by Korean Electric Power Corporation(KEPCO). In the regulations, power factor should be maintained between 0.9 and 1 in a grid-connected mode. Thus, this paper suggests two methods for the system to control its power factor. First, the inverter of DG should control power factor rather than an active filter because it brings dramatic decrease in the capacity of the active filter. Second, DG should absorb reactive power only in the range of low output power in order to prevent useless capacity increase of the inverter. This method is expected to result in the variable power factor of the system according to its output power.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.951-952
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• 2007

International Electrotechnical Commission (IEC)은 국제 규격을 제 개정하는 단체로서, 1906년에 설립된 조직이다. 2006년 말 기준으로 67개국의 회원 국가를 보유하고 있으며 총 5,613개의 규격을 제 개정하고 있다. IEC는 많은 수의 규격을 제 개정하기 위하여 100개의 Technical Committee (TC)와, 각 TC 산하에 Subcommittees(SC)를 두고 있다. SC는 다시 산하에 Working group(WG)을 두어 실제적으로 해당 국제규격의 제 개정은 바로 이 WG에서 작업을 하게 된다. 본 논문에서는 IEC TC17내의 SC17B와 SC17D의 구성, 현황 및 활동과 현재 진행되고 있는 저압차단기의 규격동향에 대하여 고찰하였다. IEC TC17은 차단기, 개폐기(스위치), 단로기, 버스관로 및 배전반등과 관련된 IEC 규격의 제 개정을 담당하고 있다. TC17 산하의 SC17B는 저압 차단기, SC17D는 저압배전반제품과 관련된 규격을 관리하고 있다. 한국은 SC17B와 SC 17D의 P-member(Participant)로서 투표권을 갖고 있으며, 한국전기연구원이 운영간사를 맡고 있다. 현재 국내기업체 전문가와 연구원들의 의견을 수렴하여 국가의견으로서 IEC에 제출하고 있지만 앞으로 더 많은 전문가들의 참여가 시급한 실정이다.

• 대한방사선기술학회지:방사선기술과학
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• 제21권1호
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• pp.29-34
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• 1998

The purpose of simple abdomen erect projection is to see the fluid level which indicates gastrointestinal ileus or free air due to perforation. we do not have to insist on low kVp technique in simple abdomen erect position as long as we can detect the fluid level and free air shadow. Therefore, the author tried to decrease patient dose by high kVp technique and to improve the image quality due to motion artifact by reduction of exposure time. [Methods] Experiment 1. * screen/film SRO1000/HRH * exposure factor : $140\;kvp{\pm}5\;kv$ with added filters, 200 mA, 0.01 sec * phantom : Acryles : 15.0 cm(equivalent to 17 cm body thickness) 17.5 cm(equivalent to 21 cm body thickness) 20.0 cm (equivalent to 25 cm body thickness) With the exposure factor for same film density($D=0.8{\pm}0.1$) and with the materials above, we tried to find out entrance skin dose and gonad dose for both male and female. Experiment 2. Burger's phantom radiography were checked to see whether there was any change of image quality according to the kVp and the added filters. Experiment 3. Using rotating meter(self made), we examined the motion artifact and the exposure time limitation. [Results and conculution] 1. Using high voltage technique of 140 kVp with added filter, Skin dose, testicle dose and ovary dose decrease to 89.3%, 47% and 71.4% respectively compare to 70 kVp technique, 2. No great changes of Burger's phantom image has detected as from 70 kVp to 140 kVp and the air hole size of Burger's phantom over 0.028 cc(Diameter 3 mm, hight 4 mm) can be distinghished. 3. 0.01 sec(1 pulse) exposure time is possible in the single phase full wave rectification that why we can quitely reduce the unsharness caused by patient's movement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.437-443
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• 2000

In this study several lanthanide complexes such as Eu(TTA)$_3$(Phen), Tb(ACAC)$_3$-(Cl-Phen) were synthesized and the white-light electroluminescence(EL) characteristics of their thin films were investigated where the devices having structures of anode/TPD/Tb(ACAC)$_3$(Cl-Phen)/Eu(TTA)$_3$(Phen)/Alq$_3$or Bebq$_2$/cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode(cathode). Device structure of glass substrate/ITO/TPD(30nm)/Tb(ACAC)$_3$(Phen)(30nm)/Eu(TTA)$_3$(Phen)(6nm)/DCM doped Alq$_3$(10nm)/Alq$_3$(20nm)/Li:Al(100nm) was also fabricated and their EL characteristics were investigated where Eu(TTA)$_3$(Phen) and DCM doped Alq$_3$were used as red light-emitting materials. It was found that the turn-on voltage of the device with non-doped Alq$_3$was lower than that of the devices with doped Alq$_3$and the blue and red light emission peaks due to TPD and Eu(TTA)$_3$(Phen) with non-doped Alq$_3$were lower than those with DCM doped Alq$_3$Details on the white-light-emitting characteristics of these device structures were explained by the energy and diagrams of various materials used in these structure where the energy levels of new materials such as ionization potential(IP) and electron affinity(EA) were measured by cyclic voltametric method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.294-295
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• 2005

다중 코어를 이용한 대전류 변압기용 Mn-Zn ferrite를 제조하고 전자기적 특성을 분석하였으며, 제조된 자심재료를 이용하여 변압기를 제조하고 전원장치에 탑재하여 효율특성을 분석하였다. ZnO의 몰비가 증가할수록 혼합 스피넬의 형성을 통한 보아 자자의 증가로 인해 투자율은 증가하고 상대적으로 전력손실이 감소하여 $Fe_2O_3$ : MnO : ZnO = 53 : 36 : 11 mo\% 일 때 가장 우수한 특성을 나타냈고, 열처리 공정의 승온 과정에서부터 산소 분압을 제어하고 최적의 대기압 상수를 산출함으로써 Zn-loss 현상을 최소화하여 ZnO 11 mol%, 대기압 상수 7.7일 때 투자율 2350, 밀도 4.9 $g/cm^3$, 비저항 480 ${\Omega}cm$, 300 mT의 최대 자속 밀도 특성을 갖는 우수한 자심 재료를 개발하였다. 그리고 최소 손실 온도를 $90^{\circ}C$ 이하로 감소시켰으며 100 kHz에서 250 $kW/m^3$의 낮은 전력손실을 나타냈다. 또한 개발된 자심재료를 이용하여 제조된 전원장치는 30~80A의 출력 전류에서 85% 이상의 고효율을 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.262-266
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• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.559-564
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• 2016

This study examined the malfunction mode of the HCMOS IC under narrow-band high-power electromagnetic wave. Magnetron is used to a narrow-band electromagnetic source. MFR (malfunction failure rate) was measured to investigate the HCMOS IC. In addition, we measured the resistance between specific pins of ICs, which are exposed and not exposed to the electromagnetic wave, respectively. As a test result of measurement, malfunction mode is shown in three steps. Flicker mode causing a flicker in LED connected to output pin of IC is dominant in more than 7.96 kV/m electric field. Self-reset mode causing a voltage drop to the input and output of IC during electromagnetic wave radiation is dominant in more than 9.1 kV/m electric field. Power-reset mode making a IC remained malfunction after electromagnetic radiation is dominant in more than 20.89 kV/m. As a measurement result of pin-to-pin resistance of IC, the differences between IC exposed to electromagnetic wave and normal IC were minor. However, the five in two hundred IC show a relatively low resistance. This is considered to be the result of the breakdown of pn junction when latch-up in CMOS occurred. Based on the results, the susceptibility of HCMOS IC can be applied to a basic database to IC protection and impact analysis of narrow-band high-power electromagnetic waves.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.515-518
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• 2011

In this work, we designed and fabricated a multilayer thin film Pb(Zr,Ti)$O_3$ cantilever with a Si proof mass for low frequency vibration energy harvesting applications. A mathematical model of a mu lti-layer composite beam was derived and applied in a parametric analysis of the piezoelectric cantilever. Finally, the dimensions of the cantilever were determined for the resonant frequency of the cantilever. W e fabricated a device with beam dimensions of about 4,930 ${\mu}M$ ${\times}$ 450 ${\mu}M$ ${\times}$ 12 ${\mu}M$, and an integrated Si proof mass with dimensions of about 1,410 ${\mu}M$ ${\times}$ 450 ${\mu}M$ ${\times}$ 450 ${\mu}M$. The resonant frequency, maximum peak voltage, and highest average power of the cantilever device were 84.5 Hz, 88 mV, and 0.166 ${\mu}Wat$ 1.0 g and 23.7 ${\Omega}$, respectively. The dimensions of the cantilever were determined for the resonance frequency of the cantilever.