• 제목/요약/키워드: Low-temperature-sinterable

검색결과 13건 처리시간 0.026초

저온 소결용 PMN-PT-BT 세라믹스의 물성에 미치는 승온 속도의 영향 (Influence of Heating Rate on the Properties of Low-Temperature-Sinterable PMN-PT-BT Ceramics)

  • 임경란;김창삼
    • 한국세라믹학회지
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    • 제42권1호
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    • pp.33-36
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    • 2005
  • 저온 소결용 PMN-PT-BT분말을 $850^{circ}C/2h$ 소결할 때 승온 속도를 분당 5, 10, $20^{circ}C$로 변화하며 물성에 미치는 영향을 조사하였다. PbO(응점 $886^{circ}C$)의 휘발이 미미한 소결온도에서는 분당 $5^{circ}C$로 승은하여 소결한 것이 승온 속도 $10^{circ}C$$20^{circ}C$의 경우에 비하여 보다 균일한 미세구조를 나타내며, 소결밀도 $7.93g/cm^{3}$, 실온 유전을 15300, 유전손실 $0.92\%의 우수한 유전 특성을 나타내었다.

MgO-$Al_2O_3$-$SiO_2$계 요업원료의 제조 및 소결특성 -에멜젼법에 의한 Spinel 분체의 저온합성- (Low-Temperature Synthesis of Spinel Powders by the Emulsion Technique)

  • 현상훈;이희수;김의수
    • 한국세라믹학회지
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    • 제27권5호
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    • pp.661-667
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    • 1990
  • Spinel powders were synthesized at the comparatively low-temperature range(800~90$0^{\circ}C$) by the emulsion-hot kerosene drying method and the effects of kerosene-evaporative conditions on powder characteristics were investigated. In emulsion drying, more unagglomerated and sinterable powders could be synthesized through rapid evaporation of emulsion at the higher kerosene temperature. The completion of formation reaction of spinel observed at the low-temperature range confirmed the high reactivity of powders. The relative theoretical density and the fracture toughness of spinel pellets sintered at 1$650^{\circ}C$ for 4hrs. were 98% and 2.1MN/m3/2, respectively.

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저온 소성용 $SiO_2-TiO_2-Bi_2O_3-RO$계 (RO;BaO-CaO-SrO) Glass/Ceramic 유전체의 $AI_2O_3$ 함량에 따른 소결 및 유전 특성의 변화 (A study on the sintering and Dielectric Characteristics of Low Temperature Sinterable $SiO_2-TiO_2-Bi_2O_3-RO$ System (RO:BaO-CaO-SrO) Glass/Ceramic Dielectrics as a Function of $AI_2O_3$ Content)

  • 윤장석;이인규;임욱;조현민;박종철
    • 한국세라믹학회지
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    • 제36권12호
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    • pp.1350-1355
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    • 1999
  • Sintering characteristics and dielectric properties of low temperature sinterable Glass/Ceramic dielectric materials were investigated. The dielectric materials which were developed for microwave frequency applications consist of SiO2-TiO2-Bi2O3-RO system(RO:BaO-CaO-SrO) crystallizable glass and Al2O3 as a ceramic filler. Sintering experiments showed that no more densification occurred above 80$0^{\circ}C$ and bulk density and shrinkage depended on Al2O3 content only. Results of dielectric measurements showed that $\varepsilon$r Q$\times$f and $\tau$f of the material containing 30wt% Al2O3 were 17.3, 600 and +23 ppm respectively. Those values for 45 and 60wt% Al2O3 samples were 11.6, 1400, +0.7 ppm and 7.2, 2000, -8.5 ppm, repectively. The results clearly showed that the Glas/Ceramic materials of present experiment decreased in $\varepsilon$r and increased in $\times$f value and changed from positive to negative value in $\tau$f value with the increasement of Al2O3 content.

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Sb 치환에 따른 $BiNbO_4$ 세라믹스의 고주파 유전특성의 변화 (Microwave Dielectric Properties of Sb substituted $BiNbO_4$ Ceramics)

  • 임혁;오영제;최세영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.646-649
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    • 2002
  • The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.

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Fabrication of High-Performance Piezoelectric Thick Films on Si for a Micropump of the Ink-jet Printer Head

  • Kim, Jong-Min;Park, Hyeong-Sik;Kim, Jwa-Yeon;Yun, Eui-Jung;Kim, Jeong-Seog;Cheon, Chae-Il
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.345-348
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    • 2006
  • The piezoelectric thick films were fabricated on silicon substrates by screen printing method. By developing a low-temperature sinterable piezoelectric composition and a new poling technique, we fabricated the high-performance piezoelectric thick films on silicon which can be applied for piezoelectric MEMS applications such as micropumps of the ink jet printer heads.

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공정개선을 통한 PZT 세라믹스의 합성 및 압전특성 (Synthesis and Piezoelectric Properties of PZT Ceramics will Improved Process)

  • 윤철수;송태권;박태곤;박인용;김명호
    • 한국전기전자재료학회논문지
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    • 제14권11호
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    • pp.904-911
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    • 2001
  • High-density lead zirconate titanate(Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$, PZT) ceramics were fabricated by a new milling-precipitation(MP) process improved from the conventional solid state process. This process was progressed by a milling impregnation through mixing ZrO$_2$ and TiO$_2$ powders with lead nitrate(Pb(NO$_3$)$_2$) water solution in zirconia ball media, and then milling precipitation was induced from precipitation of PbC$_2$O$_4$ by adding ammonium of oxalate monohydrate((NH$_4$)$_2$C$_2$O$_4$$.$H$_2$O) as a precipitant. As a result of this process, single-phase perovskite structure was formed at the calcination temperature of 750$\^{C}$ for Pb(Zr$\_$0.53/Ti$\_$0.47/)O$_3$ powders. In addition, the highest density at the sintering temperature of 1100$\^{C}$ was obtained, because of the highly sinterable PZT Powders ground through the re-milling process. Piezoelectric and dielectric properties of sintered sample were improved by MP process.

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Preparation of Low-Temperature Fired PZT Thick Films on Si by Screen Printing

  • Cheon, Chae-Il;Lee, Bong-Yeon;Kim, Jeong-Seog;Bang, Kyu-Seok;Kim, Jun-Chul;Lee, Hyeung-Gyu
    • Transactions on Electrical and Electronic Materials
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    • 제4권2호
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    • pp.20-23
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    • 2003
  • Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

저온 소성용 SiO$_2$-TiO$_2$-Bi$_2$O$_3$-RO계(RO :BaO-CaO-SrO) Glass/ceramic 유전체 재료의 B$_2$O$_3$첨가에 따른 Ag 후막과의 동시 소결시 정합성 밀 유전 특성에 관한 연구 (A Study on the Co-firing Compatibility with Ag-thick film and Dielectric Characteristics of Low Temperature Sinterable SiO$_2$-TiO$_2$-Bi$_2$O$_3$-RO system (RO :BaO-CaO-SrO) Glass/Ceramic Dielectric Material with the Addition of B$_2$O$_3$)

  • 윤장석;이인규;유찬세;이우성;강남기
    • 마이크로전자및패키징학회지
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    • 제6권3호
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    • pp.37-43
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    • 1999
  • 고주파에서 사용하기 위한 $SiO_2-TiO_2-Bi_2O_3$-RO계(RO:BaO-CaO-SrO)를 주성분으로 하는 결정화 유리와 세라믹 충진재로서 $Al_2O_3$를 혼합하여 제조한 저온 소성용 Glass/Ceramic 유전체 모재와 Ag-thick film의 동시 소결시 발생할 수 있는 소결 부정합과 그 해소 방안을 연구하였다. 적층된 Glass/Ceramic 유전체 sheet와 Ag-thick film의 동시 소결시에 소결체는 sheet와 film의 densification rate 차 등에 의해 큰 camber 현상과 그로 인해 Ag-film에 crack이 발생하였다. 이를 교정하기 위해 유리 성분과 $Al_2O_3$성분이 혼합된 유전체 분말에 $B_2O_3$를 6, 8, 10, 12, 14 vol% 첨가한 결과를 보면 $B_2O_3$첨가량이 증가함에 따라 소결체의 camber 현상은 점점 크게 줄어들었으며 14 vol% 첨가된 경우에는 거의 관찰되지 않았다. 또한 $BaO_3$첨가량이 증가함에 따라 유전율($varepsilon_{r}$)은 점점 감소하였고 Q$\times$f 값은 크게 증가하는 경향을 나타내었으며 $\tau_{f}$ 값은 양(+)의 값으로 점점 크게 변하였다.

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PMN-PT-BT/Ag/MgO 나노복합체의 제조 및 유전 특성 (Preparation of PMN-PT-BT/Ag/MgO Nanocomposite and Dielectric Properties)

  • 정순용;임경란;남산
    • 한국세라믹학회지
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    • 제39권11호
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    • pp.1074-1082
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    • 2002
  • 소결온도가 $1200{\circ}C$인 PMN-PT-BT에 소량의 $AgNO_3$와 MgO 졸을 첨가하여 $950{\circ}C$ 소결로 PMN-PT-BT/Ag/MgO 나노복합체를 제조하였다. Modified mixed oxide 방법으로 제조된 저온 소결용 PMN-PT-BT/Ag 분말을 $600{\circ}C$/1h 하소한 다음 MgO 졸을 0-1.0wt% 첨가하여, 산소 분위기에서 $850-950{\circ}C$에서 4시간 소결하여 MgO 졸의 첨가량과 소결온도에 따른 미세구조의 발달과 유전특성을 조사하였다. MgO 졸이 0.5wt% 첨가되고, $950{\circ}C$에서 소결하여 얻은 PMN-PT-BT/Ag/MgO(0.5wt%) 소결체는 $1-3{\mu}m$의 입의 크기에 $0.1-0.3{\mu}m$의 MgO가 2차상을 입경, 삼중접, 입내에 분포되어 있음을 SEM으로 볼 수 있었으며, Ag는 SIMS로 << $1{\mu}m$로 분포되어 있음을 정성적으로 확인하였다. 상대소결밀도 99%, 실온유전율 17200, 유전손실 2.1%, 비저항 $5.46{\times}10^{12}{\Omega}{\cdot}cm$의 특성을 나타내었다. 그러나 MgO 졸이 첨가되지 않은 PMN-PT-BT/Ag/MgO(0 wt%)의 $950{\circ}C$ 소결체는 상대 소결밀도 99.5%, 상온유전율 19500, 유전손실 2.1%, 비저항 $7.30{\times}10^{12}{\Omega}{\cdot}cm$의 좀더 높은 특성을 나타내었다.