• Advances in aircraft and spacecraft science
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• v.11 no.1
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• pp.83-103
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• 2024

Adhesive bonding is currently widely used in many industrial fields, particularly in the aeronautics sector. Despite its advantages over mechanical joints such as riveting and welding, adhesive bonding is mostly used for secondary structures due to its low peel strength; especially if it is simultaneously exposed to temperature and humidity; and often presence of bonding defects. In fact, during joint preparation, several types of defects can be introduced into the adhesive layer such as air bubbles, cavities, or cracks, which induce stress concentrations potentially leading to premature failure. Indeed, the presence of defects in the adhesive joint has a significant effect on adhesive stresses, which emphasizes the need for a good surface treatment. The research in this field is aimed at minimizing the stresses in the adhesive joint at its free edges by geometric modifications of the ovelapping part and/or by changing the nature of the substrates. In this study, the finite element method is used to describe the mechanical behavior of bonded joints. Thus, a three-dimensional model is made to analyze the effect of defects in the adhesive joint at areas of high stress concentrations. The analysis consists of estimating the different stresses in an adhesive joint between two 2024-T3 aluminum plates. Two types of single lap joints(SLJ) were analyzed: a standard SLJ and another modified by removing 0.2 mm of material from the thickness of one plate along the overlap length, taking into account several factors such as the applied load, shape, size and position of the defect. The obtained results clearly show that the presence of a bonding defect significantly affects stresses in the adhesive joint, which become important if the joint is subjected to a higher applied load. On the other hand, the geometric modification made to the plate considerably reduces the various stresses in the adhesive joint even in the presence of a bonding defect.

• Bulletin of the Korean Chemical Society
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• v.7 no.3
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• pp.196-200
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• 1986

The solvent change and salt do not affect the fluorescence quantum yield of 1,3-dimethylnaphtho[1,2-e]uracil indicating the considerable energy gap between the lowest singlet $({\pi},\;{\pi}^{\ast})\;and\;(n,\;{\pi}^{\ast})$ states in the compound. The results are consistent with the strong quenching of fluorescence by ethyl iodide. Fluorescence quantum yield is nearly independent of temperature, probably due to the relatively inefficient internal conversion. Unusual spectral difference is observed in isopentane and ethanol at 77K. The temperature dependence of emission in isopentane and in ethanol suggests that the increase of charge transfer character by the conformational change in isopentane leads to the structureless and red-shifted fluorescence, while in ethanol the decrease of the charge transfer character by the hydrogen bonding interaction results in the structured and blue-shifted fluorescence along with phosphorescence at the low temperature. Temperature dependence of emission in poly(methylmethacrylate) matrix indicates that $T_1{\to}S_0$ radiationless decay is an important process responsible for the strong temperature dependence of phosphorescence.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1511-1513
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• 1999

In order to investigate the properties of diamond-like carbon(DLC) thin films depending on the deposition parameters, DLC thin films were systematically fabricated by pulsed laser deposition (PLD), DLC thin films have been shown advantageous field emission properties due to a negative electron affinity (NEA) and a low work function. At the atomic level. DLC is referred to the group of carbon materials with strong chemical bonding composition of $sp^2$ and $sp^3$ arrangements of atoms incorporated with an amorphous structure. The experiment was performed at substrate temperature in the range of room temperature to $600^{\circ}C$. The laser energy densiy was used to be in the range of $6J/cm^2$ to $20J/cm^2$, SEM, Raman, PL, XPS and field emission characteristics were used to investigate the DLC thin films.

• Journal of the Korean Society of Safety
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• v.14 no.4
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• pp.78-84
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• 1999

A compact air-preheating type heat exchanger was developed and tested for the ultra-high temperature heat recovery applications. For the direct use of exhaust gases up to $1200^{\circ}C$, the heat exchanger adopted a ceramic core with high strength and low thermal expansion coefficient less than $1{\times}10^{-6}^{\circ}C^{-1}$. The ceramic core was fabricated by special extrusion and bonding techniques. To minimize thermal stresses in the core, spring-loaded sealing mechanism was designed and successfully installed. 1-pass air flow scheme was adopted for the compactness and cost-savings. The pressure test for the ceramic core showed no failure under 35 kPa and less than 3% leak under 7 kPa. Flue gas simulation system was developed to investigate the performance of the heat exchanger. The test results showed normal operations of the heat exchanger up to $1200^{\circ}C$ of exhaust gases and relatively high heat recovery efficiencies of 31～39% depending upon exhaust gas temperatures..

• Journal of Welding and Joining
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• v.16 no.5
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• pp.100-107
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• 1998

This paper describes fluxless soldering of reflow soldering process using solder foil instead of solder pastes. There is an increasing demand for the reliable solder connection in the recent high density microelectronic components technologies. And also, it is problem fracture of an Ozone layer due to freon as which is used to removal of remained flux on the substrate. This paper discussed joining phenomena, boudability and joining processes of microelectronics devices, such as between outer lead of VLSI package and copper pad on a substrate without flux. The shear strength of joints is 8 to 13 N using Sn/Pb (63/37 wt.%) solder foil with optimum joining conditions, meanwhile, in case of using Sn/In (52/48 wt.%) solder foil, it is possible to bond with low heating temperature of 550 K, and accomplish to high bonding strength of 25N in condition heating temperature of 650K. Finally, this paper experimentally shows fluxless soldering using solder foil, and accomplishes key technology of microsoldering processes.

• Journal of the Korean Society of Safety
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• v.15 no.4
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• pp.41-46
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• 2000

Silicone rubbers are elastomeric materials and organic copolymers, of which backbone is siloxane with high bonding strength. Silicone rubbers have been used as an power insulator because they are well weather proof, ozone proof and have excellent electric characteristics, thermal stability, cold resistance and low surface energy. Especially, it is known that they have very excellent characteristics at 200[$^{\circ}C$]. For this study, we made silicone rubbers as specimens and measured volume resistivity due to applied voltage and a variation of temperature 25[$^{\circ}C$] to 180[$^{\circ}C$]. Also we measured dielectric loss tangent due to applied voltage at temperature range 25[$^{\circ}C$] to 180[$^{\circ}C$] and frequency range 20[Hz] to 1${\times}10^6$[Hz].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.835-840
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• 2016

In this study, the electrostatic capacity and dielectric loss tangent for $20{\mu}m$ thick thermal conductivity silicone rubber which is heated at 80 degrees for 8 hours has been measured at temperature of $30^{\circ}C{\sim}170^{\circ}C$, frequency of 0.1~1 MHz. The results of degradation evaluation by this study are as follows. In low frequency, it found that the electrostatic capacity decreased with increasing temperature. On the other hand, it confirmed that the range of the electrostatic capacity narrowed with increasing frequency. It confirmed that there are the carboxylic acid structure and C-O bonding at range of wave number 1,000cm-1 to 1,300cm-1.

• Bulletin of the Korean Chemical Society
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• v.20 no.10
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• pp.1149-1152
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• 1999

1H NMR spectrum of a DMF-d7 solution containing 4-aminopyrimidine and [SiW11CoIIO39]6- (SiW11Co) shows separate peaks from two linkage isomers, a and b, in which N(1) and N(3) of the pyrimidine ring are coordinated to SiW11Co, respectively. The signal from the amine group in the isomer a exhibits temperature dependence that is characteristic of a two-site exchange problem. Rates of internal rotation of the amine group were determined by simulating the NMR spectra at 5-35℃. The amine group of free 4-aminopyrimidine also shows temperature-dependent spectra at lower temperatures; rates of internal rotation at (-25)-25℃ were determined. The internal rotation of the amine group in the complex is much slower than that for free 4-aminopyrimidine, indicating that π-character of the C-N bond increases on coordination to SiW11Co. The amine group in the isomer b does not show such behavior. It is probable that hydrogen bonding between N-H and a bridging oxygen atom of SiW11Co prevents it from rotating at low temperatures.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.6 no.4
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• pp.34-38
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• 1997

This paper presents a joining method by using the silicon wafer in order to apply to joint to the 3-dimensional structures of semiconductor device, high-speed , high integration, micro machine, silicon integrated sensor, and actuator. In this study, the high atomic beam, stabilized by oxidation film and organic materials at the material surface, is investigated, and the purified is obtained by removing the oxidation film and pollution layer at the materials. And the unstable surface is obtained, which can be easily joined. In order to use the low temperatures for the joint method, the main subjects are obtained as follows: 1) In the case of the silicon wafer and the silicon wafer and the silicon wafer of alumina sputter film, the specimens can be jointed at 2$0^{\circ}C$, and the joining strength is 5Mpa. 2) The specimens can not always be joined at the room temperatures in the case of the silicon wafer and the silicon wafer of alumina sputter film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.214-219
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• 2002

In order to elucidate the crystallographic orientation dependence of electrical properties of carbon (C)-doped GaAs epilayers, C incorporation into GaAs epilayers on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A has been performed by a low pressure metalorganic chemical vapor deposition using C tetrabromide ($CBt_4$) as a C source. The hole concentration of C-doped GaAs epilayers rapidly decreases with a hump at (311)A with increasing the offset angle. Although the growth temperature and the V/III ratio are varied, the crystallographic orientation dependence of hole concentration show a same trend. The above behaviors indicate that the bonding strength of As sites on a glowing surface plays an important role in the C incorporation into the high-index GaAs substrates.