• Radiation Oncology Journal
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• v.7 no.1
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• pp.85-92
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• 1989

Dosimerty based on electron spin resonance (ESR) analysis of radiation induced free radicals in amino acids is relevant to biological dosimetry applications. Alanine detectors are without walls and are tissue equivalent. Therefore, alanine ESR dosimetry looks promising for use in the therapy level. The dose range of the alanine/ESR dosimetry system can be extended down to 1 Gy. In water phantom the absorbed dose of electrons generated by a medical linear accelerator of different initial energies $(6\~21MeV)$ and therapeutic dose levels (1~60 Gy) was measured. Furthermore, depth dose measurements carried out with alanine dosimeters were compared with ionization chamber measurements. As the results, the measured absorbed doses for shallow depth of initial electron energies above 15 MeV were higher by$2\~5\%$ than those calculated by nominal energy $C_E$ factors. This seems to be caused by low energy scattered beams generated from the scattering foil and electron cones of beam projecting device in medical linear accelerator.

• Journal of the Korean Ceramic Society
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• v.34 no.1
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• pp.79-87
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• 1997

Anti-reflective and anti-static double layered films were prepared on the VDT panel by sol-gel spin-coating method. Their electrical, opticla, and mechanical properties were investigated. The outer SiO2 film with low re-fractive index was coated over the inner ATO(Antimony-doped Tin Oxide)-SiO2 film which was prepared by mixing ATO sol with SiO2 at molar ratio of 68:32 to satisfy the interference condition of double layers. The heat treatment was conducted at 45$0^{\circ}C$ for 30 min where residual organics were completely removed. The sheet resistance of ATO single layer showed the minimum value of 6$\times$107$\Omega$/$\square$ at 3 mol% addition of Sb and that of SiO2/ATO-SiO2 increased slightly with increasing SiO2 mol% up to 30 mol%, and then increased steeply to the value of 3$\times$108$\Omega$/$\square$ at 32 mol%. The reflectance of double layered films was about 0.64% at the wavelength of 550nm and the transmittance increased about 3.20%. The hardness of double layered films was almost the same as that of uncoated VDT panel, 471.4kg.f/mm2.

• Journal of the Korean Society of Radiology
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• v.10 no.4
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• pp.241-246
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• 2016

The purpose of this study was to investigate the problems of low signal-to-noise ratio(SNR) of single-shot turbo spin echo(SS-TSE) by quantifying numerically decreased signal to noise ratio. Thirty five patients without brain disease underwent diffusion MRI in 3T scanner from July to October in 2015. Single shot echo planar imaging(SS-EPI) which is conventionally used in MRI was taken to compared SS-TSE in SNR of medulla oblongata. As a result, SNR of SS-TSE diffusion(b0=$314.41{\pm}42.96$, b1000=$117.33{\pm}14.04$) is than SS-EPI diffusion(b0=$514.84{\pm}48.97$, b=$208.65{\pm}25.70$) lower in b=0 image(38.9%) and b=1,000 image(43.8%). Thus, diffusion MR using SS-EPI of MS-EPI should be taken for diagnosis of disease in brain stem due to decreased SNR of diffusion using SS-TSE.

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.157-162
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• 2006

In this study, a high sensitive giant magnetoresistance-spin valve (GMR-SV) bio-sensing device with high linearity and very low hysteresis was fabricated by photolithography and ion beam deposition sputtering system. Detection of the Fe-hemoglobin inside in a red blood and magnetic nanoparticles using the GMR-SV bio-sensing device was investigated. Here a human's red blood includes hemoglobin, and the nanoparticles are the Co-ferrite magnetic particles coated with a shell of amorphous silica which the average size of the water-soluble bare cobalt nanoparticles was about 9 nm with total size of about 50 nm. When 1 mA sensing current was applied to the current electrode in the patterned active GMR-SV devices with areas of $5x10{\mu}m^2 $ and $2x6{\mu}m^2 $, the output signals of the GMRSV sensor were about 100 mV and 14 mV, respectively. In addition, the maximum sensitivity of the fabricated GMR-SV sensor was about $0.1{\sim}0.8%/Oe$. The magnitude of output voltage signals was obtained from four-probe magnetoresistive measured system, and the picture of real-time motion images was monitored by an optical microscope. Even one drop of human blood and nanopartices in distilled water were found to be enough for detecting and analyzing their signals clearly.

• Investigative Magnetic Resonance Imaging
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• v.2 no.1
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• pp.73-82
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• 1998

Purpose : A precise NMR technique for measuring the rate of water exchange and cell membrane permeability across the hepatocyte membrane using liver-specific MR contrast agent is described. Materials and Methods : The rat hepatocytes isolated by perfusion of the livers were used for the NMR measurements. All experiments were performed on an IBM field cycling relaxometer operating from 0.02MHz to 60 MHz proton Larmor frequency. spin-echo pulse sequence was empolyed to measure spin-lattice relaxation time, T1. The continuous distribution analysis of water proton T1 data from rat hepatocytes containing low concentrations of the liver specific contrast agent, Gd-EOB-DTPA, modeled by a general two compartment exchange model. Results : The mean residence time of water molecule inside the hepatocyte was approximately 250 msec. The lower limit for the permeability of the hepatocyte membrane was $(1.3{\pm}0.1){\;}{\times}{\;}10^{-3}cm/sec$. The CONTIN analysis, which seeks the natural distribution of relaxation times, reveals direct evidence of the effect of diffusive exchange. the diffusive water exchange is not small in the intracellular space in the case of hepatocytes. Conclusions : Gd-EOB-DTPA, when combined with continuous distribution analysis, provides a robust method to study water exchange and membrane permeability in hepatocytes. Water exchange in hepatocyte is much slower thatn that in red blood cells. Therefore, tissue-specific contrast agent may be used as a functional agent to give physiological information such as cell membrane permeability.

• Journal of the Mineralogical Society of Korea
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• v.20 no.2 s.52
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• pp.97-102
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• 2007

NMR experiments with various pulse repetition delay time were carried out for the $^{15}N\;and\;^{13}C$ of a natural gem diamond and synthetic diamonds. The natural gem diamond had a weak $^{13}C$ peak at 34.1ppm when 30 second pulse repetition delay time was applied. Similar but more prominent $^{13}C$ peaks were observed at 34.2 ppm with 0.5 second pulse repetition delay time and at 34.7 ppm with 50 second pulse repetition delay time for the synthetic diamonds. Any meaningful $^{15}N$ peak was not observed for either natural or synthetic diamonds due to extremely low content of the $^{15}N$. Significant relationship was observed between relative spin-lattice relaxation times we estimated and the content of impurities. however, it was not possible to distinguish natural diamond from synthetic diamonds due to very similar characteristics of their $^{13}C$ NMR signals except relative spin-lattice relaxation times.

• Journal of the Korean Ceramic Society
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• v.36 no.3
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• pp.307-318
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• 1999

동결건조법에 의한 저유전성 실리카 박막의 제조공정 개발 및 층간 절연물질로의 응용성이 연구되었다. 코팅용 폴리머 실리카 졸은 TEOS와 이소프로판올(iso-propanol:IPA)또는 터트부탄올(tert-butanol:TBA)을 용매로한 2단계 공정에 의하여 제조되었으며, 이들 졸을 p-Si(111)웨이퍼 상에 스핀코팅한 습윤겔 박막을 동결건조 하여 다공성 실리카 박막을 제조하였다. 균일한 박막 코팅층을 얻을 수 있는 실리카 졸의 최적 점도범위는 IPA와 TBA를 용매로 한 실리카 졸의 경우 각각 10~14 cP와 20~30cP 정도였으며 스핀속도는 2000 rpm 이상이었다. 결함이 없는 다공성 실리카 박막은 TBA(빙점 $25^{\circ}C$)를 동결용매로 하여-196$^{\circ}C$까지 급랭시킨 후 $0^{\circ}C$와 0.1 torr 까지 가열 감압한 상태에서 고상의 TBAFMF 모두 제거한 다음 20$0^{\circ}C$까지 열처리하여 제조되었다. 다공성 실리카 박막의 두께는 졸의 타입과 스핀코팅 속도에 의해 2500~15000$\AA$범위 내에서 제어가 가능하였으며 이들 막의 밀도와 유전상 수 값은 각각 0.9$\pm$0.3g/㎤(기공율 60$\pm$10%)과 2.4 정도였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.242-242
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• 2012

Transparent oxide semiconductors are increasingly becoming one of good candidates for high efficient channel materials of thin film transistors (TFTs) in large-area display industries. Compare to the conventional hydrogenated amorphous silicon channel layers, solution processed ZnO-TFTs can be simply fabricated at low temperature by just using a spin coating method without vacuum deposition, thus providing low manufacturing cost. Furthermore, solution based oxide TFT exhibits excellent transparency and enables to apply flexible devices. For this reason, this process has been attracting much attention as one fabrication method for oxide channel layer in thin-film transistors (TFTs). But, poor electrical characteristic of these solution based oxide materials still remains one of issuable problems due to oxygen vacancy formed by breaking weak chemical bonds during fabrication. These electrical properties are expected due to the generation of a large number of conducting carriers, resulting in huge electron scattering effect. Therefore, we study a novel technique to effectively improve the electron mobility by applying environmental annealing treatments with various gases to the solution based Li-doped ZnO TFTs. This technique was systematically designed to vary a different lithium ratio in order to confirm the electrical tendency of Li-doped ZnO TFTs. The observations of Scanning Electron Microscopy, Atomic Force Microscopy, and X-ray Photoelectron Spectroscopy were performed to investigate structural properties and elemental composition of our samples. In addition, I-V characteristics were carried out by using Keithley 4,200-Semiconductor Characterization System (4,200-SCS) with 4-probe system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.187-192
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• 2004

We try to use isopropanol which has low boiling point to prepare ZnO thin films at low temperature. ZnO thin films were prepared by sol-gel spin-coating method using zinc acetate dehydrate-isopropanol-monoethanolamine (MEA) solution. The c-axis preferred orientation and optical properties of ZnO films with preheating temperature have been investigated. ZnO thin films were preheated at 200 to $300^{\circ}C$ with an interval of $25^{\circ}C$ and post-heated at $650^{\circ}C$. The ZnO film preheated at $275^{\circ}C$ and post-heated at $650^{\circ}C$ was highly oriented along c-axis (002) plane, and the surface with homogeneous and dense microstructures was formed having nano-sized grains. The optical transmittance was above 90 % in the visible range and exhibited absorption edges at 368 nm wavelength.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.35-41
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• 2016

The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.